DATA SH EET
Product data sheet
Supersedes data of 2002 May 6 2004 Oct 15
DISCRETE SEMICONDUCTORS
PUMZ1
NPN/PNP general purpose
transistors
db
ook, halfpage
MBD128
2004 Oct 15 2
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PUMZ1
FEATURES
•Low current (ma x. 10 0 mA)
•Low voltage (max. 40 V)
•Reduces number of components and board space.
APPLICATIONS
•General purpose switc hing and amplification.
DESCRIPTION
Two independently operating NPN/PNP transistors in an
SC-88; SOT363 plastic package.
MARKING
Note
1. * = -: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PUMZ1 F*Z
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
3, 6 collector TR2; TR1
Fig.1 Simplified outline (SC- 88) and symbol.
handbook, halfpage
132
4
56
Top view
MAM341
132
TR1 TR2
6
4
5
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PUMZ1 −plastic surface mounte d packag e; 6 leads SOT363
2004 Oct 15 3
NXP Semiconductors Pr oduct data shee t
NPN/PNP general purpose transistors PUMZ1
LIMITING VALUES
In accordance with the A b solute Maximum Rating Sys tem (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board .
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base volta ge open emitter −50 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
Rth(j-a) thermal resistance from junction to ambient note 1 416 K/W
2004 Oct 15 4
NXP Semiconductors Pr oduct data shee t
NPN/PNP general purpose transistors PUMZ1
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO collector-base cut-off current IE = 0 A; VCB = 30 V −100 nA
IE = 0 A; VCB = 30 V; Tj = 150 °C−10 μA
IEBO emitter-base cu t-off current IC = 0 A; VEB = 4 V −100 nA
hFE DC current gain IC = 1 mA; VCE = 6 V 120 −
VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 −200 mV
Cccollector capacitance IE = ie = 0 A; VCB = 12 V; f = 1 MHz
TR1 −1.5 pF
TR2 −2.2 pF
fTtransition freque ncy IC = 2 mA; VCE = 12 V; f = 100 MHz 100 −MHz
2004 Oct 15 5
NXP Semiconductors Pr oduct data shee t
NPN/PNP general purpose transistors PUMZ1
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT36
3
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
2004 Oct 15 6
NXP Semiconductors Pr oduct data shee t
NPN/PNP general purpose transistors PUMZ1
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict between information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property ri gh ts.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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under patent- or other ind us trial or intellectual property rights .
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp7 Date of release: 2004 Oct 15 Document order number: 9397 750 13967
