GU-E 1 Form B (AQY41EH) VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41EH) AQY41EH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity and low onresistance Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ.1 (AQY412EH). 6. Low-level off-state leakage current 1. High cost-performance type of PhotoMOS relay 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. 6.4 .252 2.9 .114 CAD Data CAD Data mm inch Cross section of the normally-closed type of power MOS 1 4 2 3 Passivation membrane Intermediate Source electrode Gate electrode insulating membrane N+ P+ N+ N+ P+ Gate oxidation membrane N+ TYPICAL APPLICATIONS N- Drain electrode * Power supply * Measuring equipment * Security equipment * Modem * Telephone equipment * Electricity, plant equipment * Sensing equipment N+ 3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). TYPES Part No. Output rating* Type I/O isolation voltage Package Load voltage AC/DC dual use Reinforced 5,000 V Through hole terminal Load current 60 V 550 mA 350 V 130 mA 400 V 120 mA Tube packing style DIP4-pin Packing quantity Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2-pin side 3/4-pin side AQY412EH AQY412EHA AQY412EHAX AQY412EHAZ AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ Tube Tape and reel 1 tube contains: 100 pcs. 1 batch contains: 1,000 pcs. 1,000 pcs. *Indicate the peak AC and DC values. Note: For space reasons, the initial letters of the part number "AQY", the surface mount terminal shape indicator "A" and the packing style indicator "X" or "Z" are not marked on the relay. (Ex. the label for product number AQY412EHAX is 412EH.) RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item LED forward current LED reverse voltage Input Peak forward current Power dissipation Load voltage (peak AC) Continuous load current Output Peak load current Power dissipation Total power dissipation I/O isolation voltage Temperature limits Operating Storage ds_x615_en_aqy41eh: 011212J Symbol IF VR IFP Pin VL IL Ipeak Pout PT Viso Topr Tstg AQY412EH(A) 60 V 0.55 A 1.5 A AQY410EH(A) AQY414EH(A) 50 mA 5V 1A 75 mW 350 V 400 V 0.13 A 0.12 A 0.4 A 0.3 A 500 mW 550 mW 5,000 V AC -40C to +85C -40F to +185F -40C to +100C -40F to +212F Remarks f = 100 Hz, Duty factor = 0.1% Peak AC, DC 100 ms (1 shot), VL= DC Non-condensing at low temperatures 1 GU-E 1 Form B (AQY41EH) 2. Electrical characteristics (Ambient temperature: 25C 77F) Item Symbol LED operate (OFF) current Input LED reverse (ON) current Typical AQY414EH(A) IL=Max. 1.3 mA 1.25 (1.14 V at IF = 5 mA) VF IF = 50 mA 1.5 V Typical 1 18 26 2.5 25 35 3.0 ms 1.0 ms IF = 0 mA IL = Max. Within 1 s on time IF = 5 mA VL = Max. Ron Maximum Output Off state leakage current Operate (OFF) time* Reverse (ON) time* I/O capacitance Initial I/O isolation resistance Maximum 10A ILeak Typical Maximum Typical Maximum Typical Maximum Minimum Toff 10.0 ms 0.2 ms Ton 0.8 ms IF = 0 mA 5 mA IL = Max. 0.2 ms IF = 5 mA 0 mA IL = Max. 3.0 ms 0.3 ms 1.0 ms 0.8 pF Ciso f =1MHz VB = 0 V 1.5 pF 1,000M Riso Condition IL=Max. 3.0 mA 0.4 mA IFon On resistance Transfer characteristics AQY410EH(A) 1.4 mA IFoff Maximum Minimum Typical Typical Maximum LED dropout voltage AQY412EH(A) 500 V DC *Operate/Reverse time Input Output 10% 90% Toff Ton RECOMMENDED OPERATING CONDITIONS Please obey the following conditions to ensure proper relay operation and resetting. Item Input LED current Symbol IF Recommended value 5 to 10 Unit mA Dimensions Schematic and Wiring Diagrams Cautions for Use These products are not designed for automotive use. If you are considering to use these products for automotive applications, please contact your local Panasonic technical representative. Please refer to our information on PhotoMOS Relays for Automotive Applications. REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics 1-(2). Load current vs. ambient temperature characteristics 2. On resistance vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F Allowable ambient temperature: -40C to +85C -40F to +185F Measured portion: between terminals 3 and 4; LED current: 0 mA; Load voltage: Max.(DC); Continuous load current: Max. (DC) 700 200 50 AQY414EH 100 AQY412EH On resistance, AQY410EH Load current, mA Load current, mA 600 150 500 400 300 40 AQY414EH 30 20 AQY410EH 200 50 10 100 AQY412EH 0 -40 2 -20 0 20 40 60 80 85 100 Ambient temperature, C 0 -40 -20 0 20 40 60 8085 100 Ambient temperature, C 0 -40 -20 0 20 40 60 8085 Ambient temperature, C ds_x615_en_aqy41eh: 011212J GU-E 1 Form B (AQY41EH) 3. Operate (OFF) time vs. ambient temperature characteristics 4. Reverse (ON) time vs. ambient temperature characteristics 5. LED operate (OFF) current vs. ambient temperature characteristics LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) 5 6 5 AQY412EH 4 3 2 AQY414EH AQY410EH LED operate (OFF) current, mA 0.8 Reverse (ON) time, ms Operate (OFF) time, ms 7 0.6 AQY410EH 0.4 0.2 3 2 1 AQY412EH(A) 1 4 AQY414EH 0 -40 -20 0 0 20 40 60 80 85 Ambient temperature, C -40 -20 0 0 20 40 60 80 85 Ambient temperature, C -40 -20 0 20 40 60 80 85 Ambient temperature, C 6. LED reverse (ON) current vs. ambient temperature characteristics 7. LED dropout voltage vs. ambient temperature characteristics 8-(1). Current vs. voltage characteristics of output at MOS portion Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) LED current: 5 to 50 mA Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F 1.5 4 3 2 1 140 120 100 80 60 40 20 -3 -2.5 -2 -1.5 -1 -0.5 1.4 1.3 1.2 1.1 -40 -20 0 0 20 40 60 80 85 Ambient temperature, C -40 -20 AQY414EH 0.5 1 1.5 2 2.5 3 -20 Voltage, V -40 -60 -80 -100 -120 -140 50mA 30mA 20mA 10mA 5mA 1.0 0 AQY410EH Current, mA LED dropout voltage, V LED reverse (ON) current, mA 5 0 20 40 60 80 85 Ambient temperature, C 8-(2). Current vs. voltage characteristics of output at MOS portion 9. Off state leakage current vs. load voltage characteristics 10.Operate (OFF) time vs. LED forward current characteristics Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Measured portion: between terminals 3 and 4; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 5 0.2 AQY412EH -0.5 -1 0 0 0.5 1 Voltage, V -0.2 10 -3 10 Operate (OFF) time, ms 0.4 Off state leakage current, A Current, A 0.6 AQY414EH -6 AQY410EH AQY412EH 10 -9 4 AQY412EH 3 2 AQY410EH,AQY414EH 1 -0.4 10 -12 0 -0.6 20 40 60 80 Load voltage, V 100 11.Reverse (ON) time vs. LED forward current characteristics 12.Output capacitance vs. applied voltage characteristics Measured portion: between terminals 3 and 4; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Measured portion: between terminals 3 and 4; Frequency: 1 MHz; Ambient temperature: 25C 77F 0.4 AQY410EH 0.3 0.2 AQY412EH,AQY414EH 0.1 0 0 10 20 30 40 50 LED forward current, mA 60 500 Output capacitance, pF Reverse (ON) time, ms 0.5 0 400 300 AQY412EH 200 AQY410EH,AQY414EH 100 0 10 20 30 40 50 LED forward current, mA ds_x615_en_aqy41eh: 011212J 60 0 0 10 20 50 30 40 Applied voltage, V 60 3