2N3715 - ON Semiconductor - Datasheet.Company

3–12 Motorola Bipolar Power Transistor Device Data

   

. . . designed for medium–speed switching and amplifier applications. These devices

feature:

•Total Switching Time at 3 A typically 1.15 µs

•Gain Ranges Specified at 1 A and 3 A

•Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A

•Excellent Safe Operating Areas

•Complement to 2N3791–92

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

2N3715

ÎÎÎÎÎÎ

2N3716

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎÎ

Volts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎÎ

Volts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

7.0

ÎÎÎÎÎÎ

7.0

ÎÎÎÎ

Volts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎÎ

ÎÎÎÎ

Amps

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎ

4.0

ÎÎÎÎÎÎ

4.0

ÎÎÎÎ

Amps

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Power Dissipation

ÎÎÎÎÎÎ

150

ÎÎÎÎÎÎ

150

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance

ÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.17

ÎÎÎÎÎÎ

1.17

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating Junction and Storage Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.

140

120

100

0 25 50 75 100 125 150 175 200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

160



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N3715/D

 Motorola, Inc. 1995





10 AMPERE

POWER TRANSISTORS

SILICON NPN

60–80 VOLTS

150 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

 

3–13

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 7.0 Vdc) All Types

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 80 Vdc, VBE = –1.5 Vdc) 2N3715

(VCE = 100 Vdc, VBE = –1.5 Vdc) 2N3716

(VCE = 60 Vdc, VBE = –1.5 Vdc, TC = 150

C) 2N3715

(VCE = 80 Vdc, VBE = –1.5 Vdc, TC = 150

C) 2N3716

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0) 2N3715

2N3716

ÎÎÎÎ

VCEO(sus)*

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716

(IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715, 2N3716

ÎÎÎÎ

hFE*

ÎÎÎÎ

150

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

ÎÎÎÎ

VCE(sat)*

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc) 2N3715, 2N3716

ÎÎÎÎ

VBE(sat)*

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Voltage (1)

(IC = 3.0 Adc, VCE = 2.0 Vdc) All Types

ÎÎÎÎ

VBE*

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small Signal Current Gain

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) All Types

ÎÎÎÎ

hfe

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Switching Times (Figure 2)

ÎÎÎÎ

ÎÎÎÎÎÎÎ

Typ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)

Rise Time

Storage Time

Fall Time

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.45

0.3

0.4

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

1.5

0.1

Figure 2. Typical Switching Times

IC, COLLECTOR CURRENT (AMPS)

1.0

0.7

0.5

0.3

0.2

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

SWITCHING TIMES ( s)

IB1 = IB2

+11.5 V ton ~ 30

–9 V

TEST CIRCUIT

~4.8 ms

WAVE SHAPE

AT POINT A

IC = 5 A, IB1 = IB2 = 0.5 A

≈

150 cps DUTY CYCLE

≈

+30 V

Ω

4 W 900

Ω

100

Ω

–4 V

900

Ω

100

Ω

1 W 20

Ω

1 W

Hg RELAYS

+62 V –9 V 100

Ω

toff

~1.7 ms

 

3–14 Motorola Bipolar Power Transistor Device Data

0.1

Figure 3. Collector Current versus Base Current

IB, BASE CURRENT (mA)

7.0

5.0

3.0

2.0

1.0

0.07

0.05

0.01 0.2 0.5 1.0 5.0 20 50 100 1000200

0.03

0.02

IC, COLLECTOR CURRENT (AMPS)

TJ = 175

2.0 10 500

–40

VCE = 2 V

SEE NOTES 1, 2

2N3715, 2N3716 1000

Figure 4. Base Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

700

1.0 0.4 0.8 1.6 2.0

IB, BASE CURRENT (mA)

TJ = 175

1.2

–40

VCE = 2 V

SEE NOTE 2

500

300

200

100

7.0

5.0

3.0

2.0

0.1

Figure 5. Collector Current–Voltage Variations

VBE, BASE–EMITTER VOLTAGE (VOLTS)

0.7

0.5

0.1 0.4 1.6 2.0

0.3

0.2

IC, COLLECTOR CURRENT (AMPS)

TJ = 175

0.8 1.2

–40

2N3715, 2N3716

VCE = 2 V

SEE NOTE 2

0.1

0.2

0.3

0.5

0.7

NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175

NOTE 2. Pulse test: pulse width ≈ 200 µsec, duty cycle ≈ 1.5%.

 

3–15

Motorola Bipolar Power Transistor Device Data

Figure 6. Collector–Emitter Saturation Voltage Variations

IB, BASE CURRENT (mA)

1.4

0.110

1.2

1.0

0.8

0.6

0.4

0.2

20 30 50 70 100 200 300 500 700 1000 2000

VCE(sat), COLLECTOR–EMITTER SATURATION

VOLTAGE (VOLTS)

TJ =

–40

175

SEE NOTE 2

IC = 5 A

Figure 7. Base–Emitter Saturation Voltage Variations

IB, BASE CURRENT (mA)

1.4

0.110

1.2

1.0

0.8

0.6

0.4

0.2

20 30 50 70 100 200 300 500 700 1000 2000

VBE(sat), BASE–EMITTER SATURATION

VOLTAGE (VOLTS)

Figure 8. Collector Current versus

Base–Emitter Voltage

VBE, BASE–EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)IC

0.1

–0.6 –0.4 –0.2 0 0.2 0.4

TJ = 175

REVERSE FORWARD

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2 TJ = 100

VCE = VCEO – 20 V

SEE NOTE 2

100

Figure 9. Collector Current versus

Base–Emitter Resistance

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

, COLLECTOR CURRENT (mA)IC

0.1 1 10 100 1000 10,000 100,000

5.0

3.0

2.0

1.0

0.5

0.3

0.2

IC = 3 A

IC = 1 A

IC = 5 A

IC = 3 A

IC = 1 A

TJ =

–40

175

SEE NOTE 2

VCE = VCEO – 20 V

SEE NOTE 2

TJ = 175

TJ = 100

 

3–16 Motorola Bipolar Power Transistor Device Data

Figure 10. Current Gain Variations

IC, COLLECTOR CURRENT (AMPS)

0.01

200

150

100

0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 102.0 3.0 5.0 7.0

TJ = 175

–40

VCE = 2 V

hFE

IC– ICBO

)

ICBO

Figure 11. Current Gain — Bandwidth Product versus Collector Current

IC, COLLECTOR CURRENT (AMPS)

00.1

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0

VCE = 6 V

f , CURRENT GAIN — BANDWIDTH PRODUCT (mc)

hFE, CURRENT GAIN

Figure 12. 2N3715

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.7

0.5

0.1 10 20 30 40 50 60 70

0.3

0.2

IC, COLLECTOR CURRENT (AMPS)

DC to 5 ms

500

s250

Figure 13. 2N3716

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.7

0.5

0.1 10 20 30 40 50 60 70

0.3

0.2

IC, COLLECTOR CURRENT (AMPS)

500

250

≤

SAFE OPERATING AREAS

80 90

DC to 5 ms

1 ms

≤

1 ms

The Safe Operating Area Curves indicate IC – VCE limits

below which the device will not go into secondary break-

down. Collector load lines for specific circuits must fall within

the applicable Safe Area to avoid causing a collector–emitter

short. (Duty cycle of the excursions make no significant

change in these safe areas.) To insure operation below the

maximum TJ, the power–temperature derating curve must be

observed for both steady state and pulse power conditions.

 

3–17

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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2N3715/D

*2N3715/D*

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