FF1500R17IP5 PrimePACKTM3+/IGBT5NTC PrimePACKTM3+modulewithTrench/FieldstopIGBT5,EmitterControlled5diodeandNTC VCES = 1700V IC nom = 1500A / ICRM = 3000A * * * * PotentialApplications * Highpowerconverters * Tractiondrives * Motordrives * Windturbines * Tvjop=175C * VCEsat * * Tvjop * ElectricalFeatures * Tvjop=175C * LowVCEsat * Lowswitchinglosses * ExtendedoperatingtemperatureTvjop * Highcurrentdensity * CTI>400 * * * MechanicalFeatures * PackagewithCTI>400 * Highpowerdensity * Highpowerandthermalcyclingcapability * Highcreepageandclearancedistances ModuleLabelCode BarcodeCode128 DMX-Code Datasheet www.infineon.com ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2017-09-19 FF1500R17IP5 IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V ContinuousDCcollectorcurrent TC = 90C, Tvj max = 175C IC nom 1500 A Repetitivepeakcollectorcurrent tP = 1 ms ICRM 3000 A VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V IC = 1500 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 175C VCE sat typ. max. 1,75 2,10 2,30 2,20 2,65 2,90 V V V 5,80 6,25 V Gatethresholdvoltage IC = 54,0 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 V ... +15 V, VCE = 900V QG 7,50 C Internalgateresistor Tvj = 25C RGint 1,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 88,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,70 nF - Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA VGEth () Turn-ondelaytime,inductiveload IC = 1500 A, VCE = 900 V VGE = 15 V RGon = 0,51 Tvj = 25C Tvj = 125C Tvj = 175C () Risetime,inductiveload IC = 1500 A, VCE = 900 V VGE = 15 V RGon = 0,51 Tvj = 25C Tvj = 125C Tvj = 175C () Turn-offdelaytime,inductiveload IC = 1500 A, VCE = 900 V VGE = 15 V RGoff = 0,82 Tvj = 25C Tvj = 125C Tvj = 175C () Falltime,inductiveload IC = 1500 A, VCE = 900 V VGE = 15 V RGoff = 0,82 Tvj = 25C Tvj = 125C Tvj = 175C () Turn-onenergylossperpulse IC = 1500 A, VCE = 900 V, LS = 30 nH Tvj = 25C VGE = 15 V, di/dt = 8550 A/s (Tvj = 175C) Tvj = 125C RGon = 0,51 Tvj = 175C ( Turn-offenergylossperpulse 5,35 0,30 0,31 0,32 s s s 0,15 0,16 0,16 s s s 0,66 0,74 0,80 s s s 0,11 0,16 0,17 s s s Eon 335 500 595 mJ mJ mJ IC = 1500 A, VCE = 900 V, LS = 30 nH Tvj = 25C VGE = 15 V, du/dt = 2750 V/s (Tvj = 175C) Tvj = 125C RGoff = 0,82 Tvj = 175C Eoff 330 465 545 mJ mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC 6000 A Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH tP 10 s, Tvj = 175C Temperatureunderswitchingconditions Datasheet td on tr td off tf Tvj op 2 19,0 K/kW 15,5 -40 K/kW 175 C V3.0 2017-09-19 FF1500R17IP5 ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 175C Maximumpowerdissipation Tvj = 175C VRRM 1700 V IF 1500 A IFRM 3000 A It 580 485 PRQM 1500 kW /CharacteristicValues min. kAs kAs typ. max. VF 1,75 1,70 1,70 2,10 2,05 2,05 IF = 1500 A, - diF/dt = 8550 A/s (Tvj=175C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 175C IRM 1250 1450 1550 A A A Recoveredcharge IF = 1500 A, - diF/dt = 8550 A/s (Tvj=175C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 175C Qr 325 550 700 C C C Reverserecoveryenergy IF = 1500 A, - diF/dt = 8550 A/s (Tvj=175C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 175C Erec 185 325 425 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH Forwardvoltage IF = 1500 A, VGE = 0 V IF = 1500 A, VGE = 0 V IF = 1500 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 175C Peakreverserecoverycurrent Temperatureunderswitchingconditions Tvj op V V V 35,0 K/kW 18,5 -40 K/kW 175 C /NTC-Thermistor /CharacteristicValues min. typ. max. Ratedresistance TNTC = 25C R100 DeviationofR100 TNTC = 100C, R100 = 493 Powerdissipation TNTC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 R/R 5,00 -5 P25 k 5 % 20,0 mW Specificationaccordingtothevalidapplicationnote. Datasheet 3 V3.0 2017-09-19 FF1500R17IP5 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu Materialofmodulebaseplate Creepagedistance /terminaltoheatsink /terminaltoterminal 33,0 33,0 mm Clearance /terminaltoheatsink /terminaltoterminal 19,0 19,0 mm > 400 Comperativetrackingindex CTI min. , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature max. LsCE 10 nH RCC'+EE' RAA'+CC' 0,10 0,09 m Tstg -40 150 C 3,00 6,00 Nm Mountingtorqueformodulmounting M5 ScrewM5-Mountingaccordingtovalidapplicationnote M Terminalconnectiontorque M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote M Weight typ. G 1,8 - 2,1 Nm 8,0 - 10 Nm 1400 g Hochstzulassige Bodenplattenbetriebstemperatur TBPmax = 150C Maximum baseplate operation temperature TBPmax = 150C Datasheet 4 V3.0 2017-09-19 FF1500R17IP5 IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=175C 3000 3000 Tvj = 25C Tvj = 125C Tvj = 175C 2800 2600 2600 2200 2200 2000 2000 1800 1800 1600 1600 IC [A] 2400 IC [A] 2400 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 2800 0,0 0,4 0,8 1,2 1,6 2,0 VCE [V] 2,4 2,8 3,2 0 3,6 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=0.51,RGoff=0.82,VCE=900V 3000 1800 Tvj = 25C Tvj = 125C Tvj = 175C 2800 2600 Eon, Tvj = 125C Eon, Tvj = 175C Eoff, Tvj = 125C Eoff, Tvj = 175C 1600 2400 1400 2200 2000 1200 1800 1000 IC [A] E [mJ] 1600 1400 800 1200 1000 600 800 400 600 400 200 200 0 5 Datasheet 6 7 8 9 VGE [V] 10 11 0 12 5 0 500 1000 1500 IC [A] 2000 2500 3000 V3.0 2017-09-19 FF1500R17IP5 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=1500A,VCE=900V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2200 100 Eon, Tvj = 125C Eon, Tvj = 175C Eoff, Tvj = 125C Eoff, Tvj = 175C 2000 ZthJC : IGBT 1800 1600 10 ZthJC [K/kW] 1400 E [mJ] 1200 1000 800 1 600 400 i: 1 2 3 4 ri[K/kW]: 0,524 2,36 15 1,16 i[s]: 0,0009 0,012 0,0503 1,85 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 RG [] 3,5 4,0 4,5 0,1 0,001 5,0 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=0.82,Tvj=175C 3600 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 3000 IC, Modul IC, Chip 2800 2600 3000 Tvj = 25C Tvj = 125C Tvj = 175C 2400 2200 2400 2000 1800 IF [A] IC [A] 1600 1800 1400 1200 1200 1000 800 600 600 400 200 0 0 Datasheet 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] V3.0 2017-09-19 FF1500R17IP5 ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.51,VCE=900V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1500A,VCE=900V 600 500 Erec, Tvj = 125C Erec, Tvj = 175C Erec, Tvj = 125C Erec, Tvj = 175C 450 500 400 350 400 E [mJ] E [mJ] 300 300 250 200 200 150 100 100 50 0 0 500 1000 1500 IF [A] 2000 2500 0 3000 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0,0 0,5 1,0 1,5 2,0 2,5 3,0 RG [] 3,5 4,0 4,5 5,0 ,(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=175C 100 3300 ZthJC : Diode IR, Modul 3000 2700 2400 1800 IR [A] ZthJC [K/kW] 2100 10 1500 1200 900 600 i: 1 2 3 4 ri[K/kW]: 2,02 9,55 20,7 2,7 i[s]: 0,0009 0,0172 0,0659 1,44 1 0,001 Datasheet 0,01 0,1 t [s] 1 300 0 10 7 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] V3.0 2017-09-19 FF1500R17IP5 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[] 10000 1000 100 0 Datasheet 25 50 75 TC [C] 100 125 150 8 V3.0 2017-09-19 FF1500R17IP5 /Circuitdiagram 7 6 /Packageoutlines 8 5 36 0,2 4 (2x) 8 (8x) 0,1 18 3 0,2 2 1 (4x) F 250 1 A 224 E 187 recommended design height lower side bus bar to baseplate 150 113 76 38,25 screwing depth max. 8mm (8x) 0,25 58 0,8 A B C 5,5 - 0,2 (14x) 0,5 A B C 8x 14x 10 (6x) D M8 (8x) 24 6 7,5 + 0,5 0,25 11,8 26 0,3 max. 2 B 89 39 screwing depth max. 16mm (8x) (2x) 0,3 22,1 (2x) M4 (8x) 0,3 0,3 20,6 ( 5,5) 25,1 (8x) C 3,8 (8x) 37 23,6 0,5 0,3 73 max. 3 ( 5,5) 0,8 A B C 14 C 8x 25 recommended design height lower side PCB to baseplate 39 64 78 92 103 B 117 156 195 234 Kanten: Zul. Abweichung: Oberfl che: Ma stab: 1 : 1 ISO 13715 ISO 2768 - mK Datum Bearb. 16.03.2015 Gepr. 17.06.2015 Norm A Mat.-Nr.: 36002 ba EN ISO 1302 Werkstoff: Name EU\froebusd EU\noellem Dokumentstatus: Benennung: Serienfreigabe Modul Datenblattskizze PP3+ Revision: Blat 02 Korrektur 01 Korrektur Revision 8 7 6 5 4 nderungen 3 21.10.2015 R M 26.08.2015 R M Datum Name D00062172 Modell: A00062169 02 Ersatz f r: D00046423_00 Ersetzt durch: 2 1 Alle Rechte bei INFINEON TECHNOLOGIES AG , auch f r den Fall von Schutzrechtanmeld Datasheet 9 V3.0 2017-09-19 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Edition2017-09-19 Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2017InfineonTechnologiesAG. AllRightsReserved. Doyouhaveaquestionaboutthisdocument? 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