MBR1070CT - MBR10100CT 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features * * Schottky Barrier Chip * * * * Low Power Loss, High Efficiency * Guard Ring Die Construction for Transient Protection TO-220AB L B High Surge Capability High Current Capability and Low Forward Voltage Drop C D For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications K A Lead Free Finish, RoHS Compliant (Note 3) 1 Mechanical Data 2 3 E * * Case: TO-220AB * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * M G J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 N H H Polarity: As Marked on Body P Pin 1 Pin 2 Pin 3 Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 Case Mounting Position: Any Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 H 2.40 2.70 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 All Dimensions in mm Marking: Type Number Weight: 2.24 grams (approx) Maximum Ratings and Electrical Characteristics @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 100C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop MBR 1070CT MBR 1080CT MBR 1090CT MBR 10100CT Unit VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V IO 10 A IFSM 120 A @ IF = 5.0A, TC = 125C @ IF = 5.0A, TC = 25C @ IF = 10A, TC = 125C @ IF = 10A, TC = 25C VFM 0.75 0.85 0.85 0.95 V @ TC = 25C @ TC = 125C IRM 0.1 50 mA Cj 300 pF RqJC 3.0 K/W dV/dt 10,000 V/ms Tj, TSTG -65 to +150 C Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change Operating and Storage Temperature Range Notes: Symbol 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30028 Rev. 2 - 2 1 of 2 www.diodes.com MBR1070CT-MBR10100CT a Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) 10 8 6 4 2 100 10 1.0 0.1 0 0 50 100 0 150 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 4000 Tj = 25 C f = 1.0MHz 250 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve 0.2 200 150 100 1000 50 100 0 1 10 0.1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current Ordering Information 1.0 (Note 4) Device Packaging Shipping MBR10xxCT* TO-220AB 50/Tube * xx = Device type, e.g. MBR1080CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS30028 Rev. 2 - 2 2 of 2 www.diodes.com MBR1070CT-MBR10100CT