NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
MBR1030CT thru 1060CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67 9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
13
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 10
Amperes
10
125
MBR
1030CT
30
21
30
MBR
1035CT
35
24.5
35
MBR
1040CT
40
28
40
MBR
1045CT
45
31.5
45
10000
MBR
1050CT
50
35
50
MBR
1060CT
60
42
60
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
J
Operating Temperature Range
C
T
STG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3)
R
0JC
C/W
C
J
Typical Junction Capacitance,
per element (Note 2) pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
@T
J
=125 C
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (Note 1) V
Voltage Rate of Change (Rated VR)
T
J
=125 C
T
J
=25 C
T
J
=125 C
@I
F
=5A
@I
F
=5A
@I
F
=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at T
C
=105 C (See Fig.1)
-55 to +150
-55 to +175
3.0
170
0.1
15
0.57
0.70
0.84
0.65
0.80
0.90
220
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
V/us
SEMICONDUCTOR
LITE-ON
REV. 2, Oct-2010, KTHC12