PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES -NEPOC Series- DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2533-1 is in a plastic DIP (Dual In-line Package) and the PS2533L-1 is lead bending type (Gull-wing) for surface mount. FEATURES * High collector to emitter voltage (VCEO = 350 V) * High Isolation voltage (BV = 5 000 Vr.m.s.) * High current transfer ratio (CTR = 4 000% TYP.) * High-speed switching (tr, tf = 100 s TYP.) * Ordering number of tape product: PS2533L-1-E3, E4, F3, F4 * Safety standards * UL approved: File No. E72422 * BSI approved: No. 8221/8222 * CSA approved: No. CA 101391 * NEMKO approved: No. P98101708 * SEMKO approved: No. 0143092/01-02 * DEMKO approved: No. 307863 * FIMKO approved: No. FI 17640 * DIN EN60747-5-2 (VDE0884 Part2) approved (Option) APPLICATIONS * Telephone, Exchange equipment * FAX/MODEM Document No. PN10233EJ02V0DS (2nd edition) Date Published March 2006 CP(K) The mark shows major revised points. (c) NEC Compound Semiconductor Devices, Ltd. 1990, 2006 PS2533-1,PS2533L-1 PACKAGE DIMENSIONS (Unit : mm) DIP Type (New package) PS2533-1 4.60.35 3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 7.62 3.50.3 3.20.4 4.150.4 TOP VIEW 4 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2.54 DIP Type PS2533-1 4.60.5 3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 7.62 3.50.3 3.30.5 4.150.4 TOP VIEW 4 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2.54 2 Data Sheet PN10233EJ02V0DS PS2533-1,PS2533L-1 Lead Bending Type (New package) PS2533L-1 TOP VIEW 4.60.35 4 3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 2 0.1 +0.1 -0.05 3.50.3 0.25 +0.1 -0.05 1 0.90.25 9.600.4 1.250.15 0.25 M 2.54 0.15 Lead Bending Type PS2533L-1 TOP VIEW 4.60.5 4 3 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 2 0.1 +0.1 -0.05 3.50.3 0.25 +0.1 -0.05 1 0.90.25 9.600.4 1.250.15 0.25 M 2.54 0.15 Data Sheet PN10233EJ02V0DS 3 PS2533-1,PS2533L-1 MARKING EXAMPLE No. 1 pin Mark 2533 NL601 N L Assembly Lot 6 01 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package 4 Made in Japan Made in Taiwan Standard PKG L New PKG J N Data Sheet PN10233EJ02V0DS PS2533-1,PS2533L-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Specification PS2533-1 PS2533-1-A PS2533L-1 PS2533L-1-A PS2533L-1-E3 PS2533L-1-E3-A PS2533L-1-E4 PS2533L-1-E4-A PS2533L-1-F3 PS2533L-1-F3-A PS2533L-1-F4 PS2533L-1-F4-A PS2533-1-V PS2533-1-V-A PS2533L-1-V PS2533L-1-V-A PS2533L-1-V-E3 PS2533L-1-V-E3-A PS2533L-1-V-E4 PS2533L-1-V-E4-A PS2533L-1-V-F3 PS2533L-1-V-F3-A PS2533L-1-V-F4 PS2533L-1-V-F4-A Pb-Free Magazine case 100 pcs Safety Standard Application Part Approval Number Standard products *1 PS2533-1 (UL, CSA, BSI, Embossed Tape 1 000 pcs/reel NEMKO, SEMKO, DEMKO, FIMKO Embossed Tape 2 000 pcs/reel approved) Magazine case 100 pcs DIN EN60747-5-2 (VDE0884 Part2) Embossed Tape 1 000 pcs/reel Approved (Option) Embossed Tape 2 000 pcs/reel *1 For the application of the Safety Standard, following part number should be used. Data Sheet PN10233EJ02V0DS 5 PS2533-1,PS2533L-1 ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 80 mA Reverse Voltage VR 6 V PD/C 1.5 mWC PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.6 V IC 150 mA PC/C 3.0 mW/C PC 300 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA -55 to +100 C Storage Temperature Tstg -55 to +150 C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 s, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. 6 Data Sheet PN10233EJ02V0DS PS2533-1,PS2533L-1 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz MIN. TYP. MAX. Unit 1.15 1.40 V 5 A 30 pF Transistor Collector to Emitter Dark Current ICEO VCE = 350 V, IF = 0 mA Coupled Current Transfer Ratio (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE(sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF *1 tr VCC = 5 V, IC = 10 mA, RL = 100 100 s *1 tf Rise Time Fall Time 1 500 10 4 000 400 nA 6 500 % 1.0 V 11 100 *1 Test circuit for switching time Pulse input VCC (PW = 1 ms, Duty cycle = 1/10) IF 50 VOUT RL = 100 Data Sheet PN10233EJ02V0DS 7 PS2533-1,PS2533L-1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 100 1.5 mW/C 50 0 25 50 75 100 125 300 200 3.0 mW/C 100 0 150 25 50 75 100 FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 TA = +100 C +75 C +50 C 140 Collector Current IC (mA) 10 +25 C 0 C -25 C -55 C 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 1.6 5.0 120 4.5 mA mA A m 4.0 mA 3.5 mA 3.0 mA 2.5 A 2.0 m 100 80 1.5 mA 60 1.0 mA 40 0 IF = 0.5 mA 1 2 3 4 5 6 7 8 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 500 VCE = 350 V 1 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (A) 150 Ambient Temperature TA (C) 20 100 n 10 n 1n 100 p -50 -25 0 25 50 75 100 mA IF = 5.0 A 2.0 m 1.0 mA 100 50 0.5 mA 10 5 1 0.5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. 8 125 Ambient Temperature TA (C) 100 Forward Current IF (mA) 400 Data Sheet PN10233EJ02V0DS 1.2 PS2533-1,PS2533L-1 ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;; 5 000 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 C, IF = 1 mA, VCE = 2 V 0.2 0.0 -50 -25 0 25 50 75 4 000 VCE = 2 V Sample A B 3 000 2 000 1 000 0 0.1 100 0.5 1 5 10 15 Ambient Temperature TA (C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 5 VCC = 10 V, IC = 10 mA tr 0 100 td 50 tf 10 5 ts 1 20 Current Transfer Ratio CTR (%) 1.2 500 Switching Time t (s) CURRENT TRANSFER RATIO vs. FORWARD CURRENT Normalized Gain Gv Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 50 100 200 500 2k 100 10 -10 VCE = 4 V, Vin = 0.1 Vp-p -15 -20 -25 1k RL = 1 k -5 -30 0.01 1 k 1 F Vin 47 0.1 RL Vout 1 10 100 Frequency f (kHz) Load Resistance RL () LONG TERM CTR DEGRADATION 1.2 CTR (Relative Value) 1.0 IF = 1 mA, TA = 25 C 0.8 IF = 1 mA, TA = 60 C 0.6 0.4 0.2 0.0 10 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10233EJ02V0DS 9 PS2533-1,PS2533L-1 TAPING SPECIFICATIONS (Unit : mm) 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2533L-1-E3 PS2533L-1-E4 Outline and Dimensions (Reel) 2.00.5 21.00.8 80.01.0 R 1.0 2542.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 1 000 pcs/reel 10 Data Sheet PN10233EJ02V0DS 15.9 to 19.4 Outer edge of flange PS2533-1,PS2533L-1 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2533L-1-F3 PS2533L-1-F4 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 2 000 pcs/reel Data Sheet PN10233EJ02V0DS 15.9 to 19.4 Outer edge of flange 11 PS2533-1,PS2533L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron * Peak temperature (lead part temperature) 350C or below * Time (each pins) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100C. 12 Data Sheet PN10233EJ02V0DS PS2533-1,PS2533L-1 (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10233EJ02V0DS 13 PS2533-1,PS2533L-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages 300 Vr.m.s. IV for rated line voltages 600 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 890 Vpeak Upr 1 068 Vpeak Upr 1 424 Vpeak UTR 8 000 Vpeak Upr = 1.2 x UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg -55 to +150 C Operating temperature range TA -55 to +100 C Isolation resistance, minimum value VIO = 500 V dc at TA = 25C Ris MIN. 10 12 VIO = 500 V dc at TA MAX. at least 100C Ris MIN. 10 11 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 175 C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = 175C (Tsi) 14 Data Sheet PN10233EJ02V0DS 9 PS2533-1,PS2533L-1 APPLICATION FOR TELEPHONE (EXAMPLE) LINE Bell Ringing Signal (75 Vr.m.s., 16 Hz) PS2505/PS2506 PS2705/PS2707 PS2805 etc. PS2521 PS2525 VCC Bell Ringing Detect Line Observe VCC Dial Pulse PS2532/PS2533/PS2535 Generator PS2732/PS2733 PS2832/PS2833 Dialer Circuit CPU OCMOS FET PS7xxx Speech Circuit IN OUT Data Sheet PN10233EJ02V0DS 15 PS2533-1,PS2533L-1 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. * The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 16 Data Sheet PN10233EJ02V0DS PS2533-1,PS2533L-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. 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