2N5401 Amplifier Transistors PNP Silicon Features * These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 BASE 1 EMITTER TO-92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 5401 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 4 1 Publication Order Number: 2N5401/D 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 150 - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO 160 - 5.0 - - - 50 50 - 50 50 60 50 - 240 - - - 0.2 0.5 - - 1.0 1.0 100 300 - 6.0 40 200 - 8.0 Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF MHz pF - dB 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping 2N5401G TO-92 (Pb-Free) 5000 Unit / Bulk 2N5401RLRAG TO-92 (Pb-Free) 2000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N5401 200 150 h FE , CURRENT GAIN TJ = 125C 100 25C 70 50 -55C VCE = - 1.0 V VCE = - 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 102 1.0 VCE = 30 V 0.8 IC = ICES 101 TJ = 125C 100 75C 10-1 10-2 TJ = 25C 0.9 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) 103 REVERSE 25C FORWARD 0.7 0.6 VBE(sat) @ IC/IB = 10 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 10-3 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 0 0.1 0.7 Figure 3. Collector Cut-Off Region 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. "On" Voltages http://onsemi.com 3 50 100 V, TEMPERATURE COEFFICIENT (mV/C) 2N5401 2.5 TJ = - 55C to 135C 2.0 VBB +8.8 V 1.5 10.2 V 1.0 0.5 10 ms INPUT PULSE -0.5 -1.0 -1.5 tr, tf 10 ns DUTY CYCLE = 1.0% qVB for VBE(sat) -2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 1000 700 500 TJ = 25C Cibo 10 7.0 5.0 5.1 k Vin Cobo 30 20 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 10 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 20 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn-On Time 1000 2000 IC/IB = 10 TJ = 25C IC, COLLECTOR CURRENT (mA) 1s t, TIME (ns) 1N914 100 100 70 50 2.0 300 RB 200 3.0 1000 700 500 Vout 0.25 mF 300 30 20 RC Figure 6. Switching Time Test Circuit t, TIME (ns) C, CAPACITANCE (pF) 100 70 50 3.0 k Values Shown are for IC @ 10 mA 100 Figure 5. Temperature Coefficients 1.0 0.2 100 Vin qVC for VCE(sat) 0 -2.5 0.1 VCC -30 V tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 1.0 2.0 3.0 5.0 10 20 30 50 100 10 ms 100 10 1.0 1.0 200 0.1 ms 100 ms 30 20 0.2 0.3 0.5 1 ms IC, COLLECTOR CURRENT (mA) Single Pulse Test at TA = 25C 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Turn-Off Time Figure 10. Safe Operating Area http://onsemi.com 4 1000 2N5401 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X-X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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