INTEGRATED CIRCUITS NE5517/NE5517A/AU5517 Dual operational transconductance amplifier Product data Replaces NE5517/NE5517A dated 2001 Aug 03 2002 Dec 06 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier DESCRIPTION PIN CONFIGURATION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. N, D Packages IABCa 1 16 IABCb Da 2 15 Db 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb +INa Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications. INBUFFERa Top View SL00306 Figure 1. Pin Configuration FEATURES * Constant impedance buffers * VBE of buffer is constant with amplifier IBIAS change * Excellent matching between amplifiers * Linearizing diodes * High output signal-to-noise ratio PIN DESIGNATION APPLICATIONS * Multiplexers * Timers * Electronic music synthesizers * Dolby HX Systems * Current-controlled amplifiers, filters * Current-controlled oscillators, impedances PIN NO. SYMBOL NAME AND FUNCTION 1 IABCa 2 Da 3 +INa Non-inverting input A 4 -INa Inverting input A 5 VOa Output A 6 V- Negative supply 7 INBUFFERa Buffer input A 8 VOBUFFERa Buffer output A 9 VOBUFFERb Buffer output B 10 INBUFFERb Buffer input B Amplifier bias input A Diode bias A 11 V+ Positive supply 12 VOb Output B 13 -INb Inverting input B 14 +INb Non-inverting input B 15 Db 16 IABCb Diode bias B Amplifier bias input B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70 C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 16-Pin Small Outline (SO) Package -40 to +125 C AU5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 4 INPUT (+) A INPUT (-) A OUTPUT A V- NOTE: 1. V+ of output buffers and amplifiers are internally connected. BUFFER OUTPUT A SL00308 Figure 3. Connection Diagram 2002 Dec 06 BUFFER INPUT A 3 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT 44 VDC or 22 V NE5517N, NE5517AN 1500 mW NE5517D, AU5517D 1125 mW voltage1 VS Supply PD Power dissipation, Tamb = 25 C (still air)2 VIN Differential input voltage 5 V ID Diode bias current 2 mA IABC Amplifier bias current 2 mA ISC Output short-circuit duration IOUT Buffer output current3 Tamb Operating temperature range Indefinite NE5517N, NE5517AN 20 mA 0 C to +70 C C C AU5517D -40 C to +125 C VDC DC input voltage +VS to -VS Tstg Storage temperature range Tsld Lead soldering temperature (10 sec max) NOTES: 1. For selections to a supply voltage above 22 V, contact factory 2. The following derating factors should be applied above 25 C N package at 12.0 mW/C D package at 9.0 mW/C 3. Buffer output current should be limited so as to not exceed package dissipation. 2002 Dec 06 4 -65 C to +150 C C 230 C Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier DC ELECTRICAL CHARACTERISTICS1 SYMBOL VOS PARAMETER Input offset voltage VOS/T VOS including diodes VOS Input offset change IOS Input offset current IOS/T IBIAS Input In ut bias current IB/T gM Forward transconductance AU5517/NE5517 TEST CONDITIONS Min Over temperature range IABC 5 A Typ Max 0.4 0.3 Avg. TC of input offset voltage 7 Diode bias current (ID) = 500 A 0.5 5 A IABC 500 A 0.1 Avg. TC of input offset current 0.001 Over temperature range 0.4 1 0.1 Avg. TC of input current NE5517A Min Max 5 0.4 5 0.3 2 5 2 5 0.5 2 mV 0.1 3 mV 0.1 0.6 0.6 0.4 1 Over temperature range gM tracking 9600 7700 4000 0.3 RL = 0, IABC =5 A RL = 0, IABC = 500 A RL = 0 350 300 +12 -12 5 500 5 7 9600 1200 mho mho 7 650 A A A 0.3 5 500 +12 -12 +14.2 -14.4 dB IOUT Peak output current VOUT Peak output voltage Positive Negative RL = , 5 A IABC 500 A RL = , 5 A IABC 500 A ICC Supply current IABC = 500 A, both channels 2.6 4 2.6 4 mA VOS sensitivity Positive Negative VOS/ V+ VOS/ V- 20 20 150 150 20 20 150 150 V/V V/V CMRR Common-mode rejection ration Common-mode range Crosstalk IIN Differential input current Leakage current +14.2 -14.4 110 80 110 dB 12 13.5 12 13.5 V 100 dB Referred to input2 20 Hz < f < 20 kHz 100 IABC = 0, input = 4 V 0.02 100 0.2 100 IABC = 0 (Refer to test circuit) Input resistance 10 BW Open-loop bandwidth 26 SR Slew rate Unity gain compensated 50 INBUFFER Buffer input current 5 0.4 VOBUFFER Peak buffer output voltage 5 10 2 Refer to Buffer VBE test circuit 0.02 10 0.2 5 5 nA k 2 MHz 0.4 V/s 5 10 0.5 nA 26 50 5 10 3 V V 80 RIN VBE of buffer 650 3 350 300 A A A/C 0.01 1300 A A/C 0.001 5 8 mV mV mV V/C 7 0.01 6700 5400 UNIT Typ A V 0.5 5 mV NOTES: 1. These specifications apply for VS = 15 V, Tamb = 25 C, amplifier bias current (IABC) = 500 A, Pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open. 2. These specifications apply for VS = 15 V, IABC = 500 A, ROUT = 5 k connected from the buffer output to -VS and the input of the buffer is connected to the transconductance amplifier output. 3. VS = 15, ROUT = 5 k connected from Buffer output to -VS and 5 A IABC 500 A. 2002 Dec 06 5 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier TYPICAL PERFORMANCE CHARACTERISTICS VS = 15V 3 2 INPUT OFFSET CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 4 +125C 1 -55C 0 -1 +25C +125C -2 Input Bias Current 10 3 -3 -4 -5 -6 VS = 15V 10 VS = 15V 2 -55C 10 +25C +125C 1 10 10 3 2 -55C 10 +125C -7 +25C 0.1 -8 10A 100A 0.1A 1A 1000A 1 1000A 5 PEAK OUTPUT VOLTAGE AND COMMON-MODE RANGE (V) VS = 15V +125C 10 3 +25C -55C 10 4 VOUT 3 VCMR RLOAD = 0 Tamb = 25C -2 VCMR -3 -4 -5 -6 100A 1000A (+)VIN = (-)VIN = VOUT = 36V VS = 15V -1 10A Leakage Current 10 5 2 1 0.1A 1A AMPLIFIER BIAS CURRENT (IABC) Peak Output Voltage and Common-Mode Range Peak Output Current 10 2 100A AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) 10 4 10A LEAKAGE CURRENT (pA) 0.1A 1A PEAK OUTPUT CURRENT ( A) Input Bias Current 10 4 INPUT BIAS CURRENT (nA) Input Offset Voltage 5 10 4 10 3 0V 10 2 VOUT -7 0.1A 1A 10A 100A 0.1A 1A AMPLIFIER BIAS CURRENT (IABC) Input Leakage TRANSCONDUCTANCE (gM) -- ( ohm) INPUT LEAKAGE CURRENT (pA) +125C 10 3 10 2 +25C 10 100A 1000A 7 Transconductance 10 5 gM 10 4 mq m M VS = 15V -55C +125C +25C 0.1A 1A 10A 100A 1000A AMPLIFIER BIAS CURRENT (IABC) Input Resistance PINS 2, 15 OPEN 10 10 2 0C 25C 50C 75C100C125C AMBIENT TEMPERATURE (TA) 10 2 PINS 2, 15 OPEN 10 3 10 1 1 2 3 4 5 6 INPUT DIFFERENTIAL VOLTAGE 10A AMPLIFIER BIAS CURRENT (IABC) 10 4 0 10 -50C -25C -8 1000A INPUT RESISTANCE (MEG ) 1 1 1 0.1 0.01 0.1A 1A 10A 100A 1000A AMPLIFIER BIAS CURRENT (IABC) SL00309 Figure 4. Typical Performance Characteristics 2002 Dec 06 6 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Amplifier Bias Voltage vs Amplifier Bias Current 7 2000 100 VS = 15V 1800 Tamb = +25C RL = 10k OUTPUT DISTORTION (%) 6 -55C 1600 1400 CAPACITANCE (pF) AMPLIFIER BIAS VOLTAGE (mV) Distortion vs Differential Input Voltage Input and Output Capacitance +25C 1200 1000 +125C 800 600 5 CIN 4 COUT 3 2 IABC = 1mA 10 1 0.1 400 1 200 0 0.1A 1A 10A 100A 1000A 0 0.01 0.1A 1A 10A 100A AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) Voltage vs Amplifier Bias Current 0 Noise vs Frequency 600 VS = 15V OUTPUT NOISE CURRENT (pA/Hz) OUTPUT VOLTAGE RELATIVE TO 1 VOLT RMS (dB) 20 RL = 10k VIN = 80mVP-P -20 VIN = 40mVP-P -40 -60 OUTPUT NOISE 20kHz BW -80 -100 0.1A 1A 1 10 100 1000 DIFFERENTIAL INPUT VOLTAGE (mVP-P) 1000A 10A 100A 500 400 300 100 0 10 1000A IABC AMPLIFIER BIAS CURRENT (A) IABC = 1mA 200 IABC = 100A 100 1k 10k FREQUENCY (Hz) Figure 5. Typical Performance Characteristics (cont.) 2002 Dec 06 7 100k SL00310 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier TYPICAL PERFORMANCE CHARACTERISTICS (Continued) +36V 4, 13 A +15V 4V - 11 4, 13 A 5, 12 2, 15 - 5, 12 2, 15 NE5517 NE5517 8, 9 1, 15 3, 14 1, 10 3, 14 6 + 11 7, 10 + 6 -15V Leakage Current Test Circuit Differential Input Current Test Circuit V+ V 50k V- Buffer VBE Test Circuit SL00311 Figure 6. Typical Performance Characteristics (cont.) APPLICATIONS +15V INPUT 0.01F 3, 14 10k 62k - 390pF 51 11 1, 16 2, 15 7, 10 NE5517 1.3k 5, 12 4, 13 8, 9 OUTPUT 6 0.01F + 5k -15V 10k -15V 0.001F Unity Gain Follower Figure 7. Applications 2002 Dec 06 8 SL00312 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier For the diodes and the input transistors that have identical geometries and are subject to similar voltages and temperatures, the following equation is true: CIRCUIT DESCRIPTION The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 8. ID ) IS 12(I B ) I O) 2 T KT + q In q In I 12(I D B * I O) * IS 2 ID 2 IB IO + IS for |I S| t 2 ID 1. Transconductance Amplifier The transistor pair, Q4 and Q5, forms a transconductance stage. The ratio of their collector currents (I4 and I5, respectively) is defined by the differential input voltage, VIN, which is shown in equation 1. I5 KT V IN + q In I4 (1) The only limitation is that the signal current should not exceed ID. 3. Impedance Buffer Where VIN is the difference of the two input voltages The upper limit of transconductance is defined by the maximum value of IB (2 mA). The lowest value of IB for which the amplifier will function therefore determines the overall dynamic range. At low values of IB, a buffer with very low input bias current is desired. A Darlington amplifier with constant-current source (Q14, Q15, Q16, D7, D8, and R1) suits the need. KT 26 mV at room temperature (300 k). Transistors Q1, Q2 and diode D1 form a current mirror which focuses the sum of current I4 and I5 to be equal to amplifier bias current IB: I4 + I5 = IB (2) If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor series of In function can be approximated as KT KT I 5 * I 4 q In I 4 [ q I4 I5 APPLICATIONS Voltage-Controlled Amplifier (3) In Figure 10, the voltage divider R2, R3 divides the input-voltage into small values (mV range) so the amplifier operates in a linear manner. and I4 I5 IB KT I 5 KT I 5 * I 4 2KT I 5 * I 4 + V IN q In I 4 [ q 12I + q I B I 5 * I 4 + V IN I B q It is: (4) B I OUT + * V IN @ 2KT q 2KT + IO I B A+ (5) V OUT V IN + R3 R2 ) R3 @ gM @ R L (gM in mhos for IABC in mA) is then the transconductance of the amplifier and is Since gM is directly proportional to IABC, the amplification is controlled by the voltage VC in a simple way. 2KT proportional to IB. When VC is taken relative to -VCC the following formula is valid: 2. Linearizing Diodes For VIN greater than a few millivolts, equation 3 becomes invalid and the transconductance increases non-linearly. Figure 9 shows how the internal diodes can linearize the transfer function of the operational amplifier. Assume D2 and D3 are biased with current sources and the input signal current is IS. Since I ABC + (V C * 1.2V) R1 The 1.2 V is the voltage across two base-emitter baths in the current mirrors. This circuit is the base for many applications of the AU5517/NE5517. I4 + I5 = IB and I5 - I4 = I0, that is: I4 = (IB - I0), I5 = (IB + I0) 2002 Dec 06 @ gM; (3) gM = 19.2 IABC q The term R3 R2 ) R3 V OUT + I OUT @ R L; The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form three current mirrors that produce an output current equal to I5 minus I4. Thus: V IN I B (6) 9 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier V+ 11 D6 D4 Q14 Q6 Q10 Q12 Q13 7,10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00313 Figure 8. Circuit Diagram of NE5517 Voltage-Controlled Resistor (VCR) +VS Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made. Figure 13 shows how this is done. A voltage presented at the RX terminals forces a voltage at the input. This voltage is multiplied by gM and thereby forces a current through the RX terminals: ID I ID 2 I ID S 2 I0 2 I I I B D I0 I5 I4 S RX = I5 I4 D3 S Q4 I5 Voltage-Controlled Filters IS Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is a unity gain buffer until XC/gM is equal to R/RA. Then, the frequency response rolls off at a 6dB per octave with the -3 dB point being defined by the given equations. Operating in the same manner, a Voltage Controlled High-Pass Filter is shown in Figure 16. Higher order filters can be made using additional amplifiers as shown in Figures 17 and 18. 1/2ID IB -VS SL00314 Figure 9. Linearizing Diode Voltage-Controlled Oscillators Stereo Amplifier With Gain Control Figure 19 shows a voltage-controlled triangle-square wave generator. With the indicated values a range from 2 Hz to 200 kHz is possible by varying IABC from 1 mA to 10 A. Figure 11 shows a stereo amplifier with variable gain via a control input. Excellent tracking of typical 0.3 dB is easy to achieve. With the potentiometer, RP, the offset can be adjusted. For AC-coupled amplifiers, the potentiometer may be replaced with two 510 resistors. The output amplitude is determined by IOUT x ROUT. Please notice the differential input voltage is not allowed to be above 5 V. Modulators Because the transconductance of an OTA (Operational Transconductance Amplifier) is directly proportional to IABC, the amplification of a signal can be controlled easily. The output current is the product from transconductancexinput voltage. The circuit is effective up to approximately 200 kHz. Modulation of 99% is easy to achieve. 2002 Dec 06 RA RA where gM is approximately 19.21 MHOs at room temperature. Figure 14 shows a Voltage Controlled Resistor using linearizing diodes. This improves the noise performance of the resistor. D2 1/2ID IS R gM With a slight modification of this circuit you can get the sawtooth pulse generator, as shown in Figure 20. 10 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier transistors. The output current range of the DAC normally reaches from 0 to -2 mA. In this application, however, the current range is set through RREF (10 k) to 0 to -1 mA. APPLICATION HINTS To hold the transconductance gM within the linear range, IABC should be chosen not greater than 1 mA. The current mirror ratio should be as accurate as possible over the entire current range. A current mirror with only two transistors is not recommended. A suitable current mirror can be built with a PNP transistor array which causes excellent matching and thermal coupling among the 2 I DACMAX V REF R REF 2 5V 10kW 1mA INT +VCC VC +VCC R1 R4 = R2/ /R3 3 + IABC 1 11 5 7 NE5517 R2 VIN 6 - 8 4 IOUT VOUT RL RS R3 INT -VCC TYPICAL VALUES: R1 = 47k R2 = 10k R3 = 200 R4 = 200 RL = 100k RS = 47k SL00315 Figure 10. +VCC 10k 3 VIN1 RIN + 11 1k RP +VCC NE5517/A RD IABC - VIN2 8 1 4 VC INT +VCC 15k VOUT1 RL 10k 30k 5.1k RC 10k 14 RIN 15k 1k RP +VCC 16 + -VCC IABC 15 +VCC 10 NE5517/A 12 RD 9 6 - 13 VOUT2 RL 10k RS -VCC INT Figure 11. Gain-Controlled Stereo Amplifier 2002 Dec 06 11 SL00316 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier RC 30k VIN2 SIGNAL 1 IABC +VCC 11 ID 3 15k 2 5 NE5517/A 1k VOS INT +VCC + 7 - VIN1 CARRIER 8 4 RL 10k 10k VOUT RS 6 -VCC -VCC INT SL00317 Figure 12. Amplitude Modulator R R 30k +VCC 3 RA gM RA VC INT +VCC 11 + X IO 2 NE5517/A 5 7 C - 4 200 200 VOUT 8 RX -VCC R 100k 10k -VCC INT SL00318 Figure 13. VCR +VCC VC +VCC ID 3 VOS 30k 1 RP INT +VCC 11 2 NE5517/A 1k 5 7 C 6 4 8 RX -VCC R 100k 10k -VCC INT Figure 14. VCR with Linearizing Diodes 2002 Dec 06 12 SL00319 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier 1 +VCC 100k VIN 3 30k VC IABC INT +VCC 11 + 2 NE5517/A 5 - 6 4 200 8 VOUT 200 RA 7 C 150pF R 100k -VCC 10k -VCC INT NOTE: f O g(R RA gM RA) 2pC SL00320 Figure 15. Voltage-Controlled Low-Pass Filter 1 +VCC +VCC 100k VOS NULL 30k 3 VC IABC INT +VCC 11 + 2 NE5517/A 5 -VCC - 6 RA 1k 8 0.005F 4 1k 7 C VOUT R 100k -VCC 10k -VCC INT NOTE: f O g(R RA gM RA) 2pC SL00321 Figure 16. Voltage-Controlled High-Pass Filter 15k VC +VCC +VCC NE5517/A - 100pF 200 RA NE5517/A 100k C - 200 INT +VCC + + VIN -VCC R 100k 10k RA 100k 2C 200pF VOUT RA 200 10k 200 -VCC -VCC INT NOTE: f O R A gM (R R A) 2p C SL00322 Figure 17. Butterworth Filter - 2nd Order 2002 Dec 06 13 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier 1 15k 16 VC +VCC +VCC 10k 3 14 + 11 5 2 7 12 NE5517/A - INT +VCC + 6 - 800pF 10 NE5517/A 15 20k LOW PASS VOUT 800pF 13 9 1k -VCC 1k 5.1k 20k 20k 5.1k -VCC -VCC INT BANDPASS OUT SL00323 Figure 18. State Variable Filter 30k +VCC VC +VCC 4 INT +VCC - 11 1 5 7 12 + 10 NE5517/A NE5517/A 3 INT +VCC 47k 13 - C 0.1F 6 -VCC 16 + 8 14 VOUT2 9 20k 10k -VCC INT -VCC VOUT1 GAIN CONTROL SL00324 Figure 19. Triangle-Square Wave Generator (VCO) IB IC 470k 1 +VCC VC +VCC 4 + 3 R1 30k 6 -VCC +VCC 30k 11 - 7 12 10 NE5517/A NE5517/A - INT 47k 13 5 2 16 INT +VCC C 0.1F + 8 14 R2 20k 30k -VCC -VCC VOUT1 NOTE: (V V PK I 0.8) R 1 2V PK x C 2V PKxC C C T T f I H L OSC 2V xC C R1 R2 IB I PK C VOUT2 INT I B SL00325 Figure 20. Sawtooth Pulse VCO 2002 Dec 06 14 Philips Semiconductor Product data Dual operational transconductance amplifier DIP16: plastic dual in-line package; 16 leads (300 mil) 2002 Dec 06 15 NE5517/NE5517A/ AU5517 SOT38-4 Philips Semiconductor Product data Dual operational transconductance amplifier SO16: plastic small outline package; 16 leads; body width 3.9 mm 2002 Dec 06 16 NE5517/NE5517A/ AU5517 SOT109-1 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 REVISION HISTORY Rev Date Description _3 20021206 Product data (9397 750 10796); type number AU5517 added. ECN 853-0887 29176 of 08 November 2002; supersedes Product data NE5517_NE5517A version 2 of 03 August 2001. Modifications: * Type number AU5517 added. * "Description" section edited. _2 20010803 2002 Dec 06 Product data (9397 750 09175); NE5517/NE5517A only; ECN 853-0887 26833 of 2001 Aug 03 . 17 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier Data sheet status Level Data sheet status [1] Product status [2] [3] Definitions I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products--including circuits, standard cells, and/or software--described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Date of release: 12-02 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Document order number: 2002 Dec 06 18 9397 750 10796