© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15 1Publication Order Number:
BD243B/D
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
High Current Gain Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO 80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
VCB 80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC6 Adc
Collector Current − Peak ICM 10 Adc
Base Current IB2.0 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD65
0.52 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
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MARKING DIAGRAM
BD24xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
BD24xyG
AY WW
TO−220
CASE 221A
STYLE 1
123
4
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
Device Package Shipping
ORDERING INFORMATION
BD243BG TO−220
(Pb−Free) 50 Units / Rail
BD243CG TO−220
(Pb−Free) 50 Units / Rail
BD244BG TO−220
(Pb−Free) 50 Units / Rail
BD244CG TO−220
(Pb−Free) 50 Units / Rail
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
0.7
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
400
400
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 30
15
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) 1.5 Vdc
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth 300 ms, Duty Cycle 2.0%.
2. fT = hfe ftest
80
60
40
20
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
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3
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
1.0
0.7
0.5
0.3
0.1
0.07
0.02 0.1 0.2 0.4 0.6 2.0 6.0
td @ VBE(off) = 5.0 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
+ 11 V
0
VCC
- 30 V
SCOPE
RB
- 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
tr
0.03
0.05
1.0 4.0
D1 MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
- 9.0 V D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(max) = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
CURVES APPLY BELOW RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
5.0
1.0
0.1 10 20 60 100
TJ = 150°C
BD243B, BD244B
BD243C, BD244C
5.0 ms
0.5 ms
0.2
2.0
0.5
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
0.3
40 80
1.0
ms
There are two limitations on the power handling ability o f
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C, T J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
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4
5.0
0.06
Figure 6. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05 0.1 0.2 0.4 0.6 2.0 6.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
1.0 4.0
0.7
3.0
tf
300
0.5
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 3.0 5.0 20 30 5010
CAPACITANCE (pF)
200
100
70
50
TJ = 25°C
Cib
Cob
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
0.06
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0 0.1 0.2 0.3 0.4 0.6 1.0 2.0 6.0
100
50
30
10
2.0
0.06
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.6 2.0 3.0 4.0 6.0
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
2.0
10
Figure 10. “On” Voltages
IB, BASE CURRENT (mA)
020 30 50 100 200 300 500 100
0
1.6
1.2
0.8
0.4
IC = 1.0 A
TJ = 25°C
2.5 A 5.0 A
300
70
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
+2.5
0.06
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 3.0 0.4 0.6
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
qVB FOR VBE
*qVC FOR VCE(sat)
*APPLIES FOR IC/IB 5.0
7.0
0.1 1.00.4
1.6
1.2
VBE @ VCE = 4.0 V
+1.0
2.00.1
200
20
4.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 55°C to + 25°C
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
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5
103
Figure 12. Collector Cut-Off Region
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
102
101
100
10-1
, COLLECTOR CURRENT (A)μIC
10-2
10-3
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
VCE = 30 V
TJ = 150°C
100°C
REVERSE FORWARD
IC = ICES
10M
Figure 13. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
20 40 60 80 100 120 140 16
0
1.0M
100k
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
IC = 2 x ICES
25°C
+0.7
10k
1.0k
0.1k
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
UBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5817−1050
BD243B/D
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