RMB2S & RMB4S
Vishay General Semiconductor
Document Number: 88705
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Fast recovery, low switching loss
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, lighting ballaster, battery
charger, home appliances, office equipment, and
telecommunication applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 0.5 A
VRRM 200 V, 400 V
IFSM 30 A
trr 150 ns
VF1.25 V
TJ max. 150 °C
TO-269AA (MBS)
~
~
~
~
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Device marking code 2R 4R
Maximum repetitive peak reverse voltage VRRM 200 400 V
Maximum RMS voltage VRMS 140 280 V
Maximum DC blocking voltage VDC 200 400 V
Maximum average forward output
rectified current at TA = 30 °C
on glass-epoxy P.C.B.
on aluminum substrate IF(AV) 0.5 (1)
0.8 (2) A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t5.0A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
RMB2S & RMB4S
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88705
Revision: 01-Feb-08
2
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RMB2S RMB4S UNIT
Maximum instantaneous forward voltage
drop per diode 0.4 A VF 1.25 V
Maximum DC reverse current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
100 µA
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 ns
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Typical thermal resistance
RθJA
RθJA
RθJL
85 (1)
70 (2)
20 (1)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RMB4S-E3/45 0.22 45 100 Tube
RMB4S-E3/80 0.22 80 3000 13" diameter paper tape and reel
Figure 1. Maximum Forward Current Derating Curve
020 40 60 80100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass Epoxy P.C.B.
Average Forward Rectified Current (A)
Ambient Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
5
10
15
20
25
30
35
f = 60 Hz
f = 50 Hz
T
A
= 40 °C
Single Half Sine-Wave
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle
RMB2S & RMB4S
Vishay General Semiconductor
Document Number: 88705
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.3 0.5 0.7 0.9 1.1 1.3 1.5
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 150 °C
TJ = 25 °C
020 40 60 80100
0.01
0.1
10
100
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1 110 100
0
5
10
15
20
25
30
1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.029 (0.74)
0.017 (0.43)
0 to 8°
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40) 0.038(0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58 MIN.)
0.105 (2.67)
0.095 (2.41)
TO-269AA (MBS)
Mounting Pad Layout
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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