2SK4003
2005-01-21
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Low drain−source ON-resistance : RDS (ON) = 1.7 Ω (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 600 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain−source voltage VDSS 600 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate−source voltage VGSS ±30 V
DC (Note 1) ID 3
A
Drain current
Pulse (Note 1) IDP 12
A
Drain power dissipation (Tc = 25°C) PD 20 W
Single-pulse avalanche energy
(Note 2)
EAS 168 mJ
Avalanche current IAR 6 A
Repetitive avalanche energy (Note 3) EAR 2 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to
ambient Rth (ch−a) 125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.2 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-7J2B
Weight: 0.36 g (typ.)
JEDEC ―
JEITA SC-64
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
０．６±０．１５
０．８ MAX．
２．３±０．２
１２３
１．1 MAX．
０．６±０．１５
０．６ MAX
０．６ MAX．
１．１±０．２
６．５±０．２
５．５±０．２ １．５±０．２
２．３２．３
５．７
５．２±０．２
０．９
４．１±０．２ １． ６
2SK4003
2005-01-21
2
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 µA
Gate−source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 — — V
Drain cutoff current IDSS VDS = 600 V, VGS = 0 V — — 100 µA
Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain−source ON-resistance RDS (ON) V
GS = 10 V, ID = 1.5 A — 1.7 2.2 Ω
Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.5 A 0.5 2.0 — S
Input capacitance Ciss — 600 —
Reverse transfer capacitance Crss — 7 —
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
— 60 —
pF
Rise time tr — 16 —
Turn−on time ton — 40 —
Fall time tf — 18 —
Switching time
Turn−off time toff
— 80 —
ns
Total gate charge (gate−source
plus gate−drain) Qg — 15 —
Gate−source charge Qgs — 9 —
Gate−drain (“Miller”) charge Qgd
VDD ≒ 400 V, VGS = 10 V, ID = 3 A
— 6 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — 3 A
Pulse drain reverse current
(Note 1)
IDRP — — — 12 A
Forward voltage (diode) VDSF I
DR = 3 A, VGS = 0 V — — −1.7 V
Reverse recovery time trr — 800 — ns
Reverse recovery charge Qrr
IDR = 3 A, VGS = 0 V
dIDR / dt = 100 A / µs — 5 — µC
Marking
K4003
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
0 V
10 V
VGS
VDD
∼
−
200 V
ID = 1.5 A VOUT
50 Ω
Duty
<
=
1%, tw = 10 µs
RL=
133Ω
2SK4003
2005-01-21
3
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
