IRF7342TRPBF - International Rectifier

HEXFET® Power MOSFET

PD -91859

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

2/24/99

Description

lGeneration V Technology

lUltra Low On-Resistance

lDual P-Channel Mosfet

lSurface Mount

lAvailable in Tape & Reel

lDynamic dv/dt Rating

lFast Switching

SO-8

VDSS = -55V

RDS(on) = 0.105Ω

IRF7342

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Parameter Max. Units

VDS Drain- Source Voltage -55 V

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4

ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A

IDM Pulsed Drain Current -27

PD @TC = 25°C Power Dissipation 2.0

PD @TC = 70°C Power Dissipation 1.3

Linear Derating Factor 0.016 W/°C

VGS Gate-to-Source Voltage ± 20 V

VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V

EAS Single Pulse Avalanche Energy114

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient––– 62.5 °C/W

Thermal Resistance

Absolute Maximum Ratings

W

D1

D2

G1

S2

G2

S1

T op View

8

1

2

3

45

6

7

IRF7342

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 –– – –– – V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA

––– 0.095 0.105 VGS = -10V, ID = -3.4A 

––– 0.150 0.170 VGS = -4.5V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA

gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A

––– ––– -2.0 VDS = -55V, VGS = 0V

––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge ––– 26 38 ID = -3.1A

Qgs Gate-to-Source Charge ––– 3. 0 4.5 nC VDS = -44V

Qgd Gate-to-Drain ("Miller") Charge ––– 8. 4 13 VGS = -10V, See Fig. 10 

td(on) Turn-On Delay Time ––– 14 22 VDD = -28V

trRise Time ––– 10 15 ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0Ω

tfFall Time ––– 22 32 RD = 16Ω, 

Ciss Input Capacitance ––– 690 ––– VGS = 0V

Coss Output Capacitance ––– 210 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

nA

ns

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 

trr Reverse Recovery Time ––– 54 80 n s TJ = 25°C, IF = -2.0A

Qrr Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

––– –––

––– ––– -27

-2.0 A

S

D

G

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 ) ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

 Starting TJ = 25°C, L = 20mH

RG = 25Ω, I AS = -3.4A. (See Figure 8)  Pulse width ≤ 300µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board, t<10 sec

IRF7342

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0.1

1

10

100

0.1 1 10 100

20

µ

s PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

DS

D

-3.0V

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.1 1 10 100

20

µ

s PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Volta

g

e (V)

-I , Drain-to-Source Current (A)

DS

D

-3.0V

1

10

100

34567

V = -25V

20µs PULSE WIDTH

DS

-V , Gate-to-Source Volta

g

e (V)

-I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Volta

g

e (V)

-I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

-4.5V -4.5V

IRF7342

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Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

0246810 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

D

DS (on)

VGS = -4.5V

VGS = -10V

(Ω)

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-10V

-3.4 A

25 50 75 100 125 150

0

50

100

150

200

250

300

Startin

g

T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

R

DS(on)

, Drain-to-Source On Resistance ( Ω )

0.05

0.15

0.25

0.35

0.45

2581114

A

GS

-V , Ga te-to-So ur c e Vo lt a ge ( V)

I = -3 .4 A

D

IRF7342

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010 20 30 40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

G

GS

I =

D-3.1A

V =-12V

DS

V =-30V

DS

V =-48V

DS

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

-

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

1 10 100

0

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss

g

s

g

d , ds

rss

g

d

oss ds

g

d

Ciss

Coss

Crss

IRF7342

6www.irf.com

SO-8 P ac kage Details

K x 45°

C

8X

L

8X

θ

H

0.25 ( .0 1 0) M A M

A

0 .10 (.00 4)

B 8X

0.25 (.0 10 ) M C A S B S

- C -

6X

e

- B -

D

E

- A -

8 7 6 5

1 2 3 4

5

6

5

RECOM MENDED FOOTPRINT

0.72 (.028 )

8X

1 .78 (.07 0)

8X

6.46 ( .255 )

1.27 ( .0 50 )

3 X

DIM INCHE S MILL IMETE RS

MIN MAX MIN MA X

A .0532 .0688 1 .35 1.75

A1 .0040 .0098 0 .10 0.25

B .014 .018 0 .36 0.46

C .00 7 5 .0 0 9 8 0.1 9 0 . 2 5

D .18 9 .19 6 4.8 0 4 . 9 8

E .150 .157 3 .81 3.99

e .0 5 0 B AS IC 1 .27 BA S IC

e 1 .0 2 5 BAS IC 0 .63 5 BA SIC

H .22 8 4 .2 4 4 0 5.8 0 6 . 2 0

K .011 .019 0 .28 0.48

L 0.16 .050 0.41 1.27

θ

0 ° 8 ° 0 ° 8 °

NOTES:

1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIM ENSION : INCH.

3. DIMENS IONS ARE SHOWN IN MIL L IMETERS ( IN CH ES).

4. O UT L INE C ONFOR MS TO J EDEC OUTL IN E M S-0 1 2AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOL D PROT RUSION S NOT TO EX C EE D 0.2 5 ( .0 06 ) .

DIMENSIONS IS THE L ENG T H OF LEAD FOR S OLDERING TO A S UBS TR AT E..

5

6

A1

e1

θ

Part Marking

IRF7342

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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/ Data and specifications subject to change without notice. 2/99

33 0.00

(12.992)

MAX.

14.40 ( .5 66 )

12.40 ( .4 88 )

NOTES :

1. CO NTROLLING DIMEN SIO N : M ILLIMETER .

2. O U TLINE CON FO R MS T O E IA -481 & EIA -541.

FEED DIRECTION

TERM INAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. C ONTROLLING DIM ENSIO N : M ILLIM ETER.

2. ALL DIM ENSIONS ARE SHO WN IN M ILLIM ETERS(INCHES).

3. OU TLIN E C O N FORM S TO EIA-481 & EIA-541.

Tape and Reel