CM100TU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMODTM U-Series Module 100 Amperes/600 Volts A B F G E S 4 - Mounting Holes G H E H E R K L GuP EuP C GuN EuN GvP EvP GwP EwP D TC Measured Point TC Measured Point M GwN EwN GvN EvN u v w K J E H N J E E H 5 - M4 NUTS 0.110 - 0.5 Tab P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.02 102.0 K 0.05 1.25 B 3.150.01 80.00.25 L 0.74 18.7 M 1.55 39.3 N 0.12 91.0 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-12H is a 600V (VCES), 100 Ampere SixIGBT IGBTMODTM Power Module. C 3.58 D 2.910.01 E 0.43 11.0 P 0.32 8.1 F 0.79 20.0 Q 1.02 26.0 G 0.39 10.0 R 0.47 11.85 Type Current Rating Amperes VCES Volts (x 50) H 0.75 19.1 S 0.22 Dia. 5.5 Dia. CM 100 12 J 0.79 20.0 74.00.25 3.05 81 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-12H Six IGBTMODTM U-Series Module 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Symbol CM100TU-12H Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 100 Amperes ICM 200* Amperes IE 100 Amperes Peak Emitter Current** IEM 200* Amperes Maximum Collector Dissipation (Tj < 150C) Pc 400 Watts Storage Temperature Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Mounting Torque, M4 Main Terminal - 15 in-lb Mounting Torque, M5 Mounting - 31 in-lb - 570 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V - - 0.5 A 4.5 6 7.5 Volts - 2.4 3.0 Volts - Volts - nC Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25C IC = 100A, VGE = 15V, Tj = 125C - QG VCC = 300V, IC = 100A, VGE = 15V - Total Gate Charge Emitter-Collector Voltage* VEC IE = 100A, VGE = 0V - * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. 2.6 200 - 2.6 Volts Min. Typ. Max. Units - - 8.8 nf - - 4.8 nf - - 1.3 nf Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 100A, - - 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, - - 250 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 6.3V, Resistive - - 200 ns tf Load Switching Operation - - 300 ns Diode Reverse Recovery Time trr IE = 100A, diE/dt = -200A/s - - 160 ns Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = -200A/s - 0.24 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module - - 0.31 C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module - - 0.7 C/W Rth(c-f) Per Module, Thermal Grease Applied - 0.018 - C/W Contact Thermal Resistance 82 Max. Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TU-12H Six IGBTMODTM U-Series Module 100 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 200 VGE = 20V 160 5 VCE = 10V Tj = 25C Tj = 125C 13 12 120 11 80 10 40 9 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 14 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 120 80 40 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 40 80 120 160 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 8 6 IC = 100A 4 2 Cies CAPACITANCE, Cies, Coes, Cres, (nF) IC = 200A 102 101 Coes 100 Cres 10-1 VGE = 0V f = 1MHz IC = 40A 4 8 12 16 20 1.4 1.8 2.2 2.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = 15V RG = 6.3 Tj = 125C td(off) tf 102 td(on) tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -200A/sec Tj = 25C trr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-2 10-1 3.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 101 100 1.0 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 0 0 200 101 Tj = 25C Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25C Tj = 125C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 200V VCC = 300V 12 8 4 0 0 75 150 225 300 GATE CHARGE, QG, (nC) 83 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 84 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.31C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) CM100TU-12H Six IGBTMODTM U-Series Module 100 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3