Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient75 100 °C/W
HEXFET® Power MOSFET
Thermal Resistance
VDSS = -12V
RDS(on) = 0.05Ω
Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain Current -34
PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy33 mJ
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET® power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a premium. The low profile
(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Description
Micro3™
S
G1
2
D
3
lUltra Low On-Resistance
lP-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
l1.8V Gate Rated
lLead-Free
lRoHS Compliant, Halogen-Free
IRLML6401PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Form Quantity
IRLML6401TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML6401TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V
trr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/μs
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-34
A
S
D
G
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050 VGS = -4.5V, ID = -4.3A
RDS(on) Static Drain-to-Source On-Resistance  ––– 0.085 VGS = -2.5V, ID = -2.5A
 ––– 0.125 VGS = -1.8V, ID = -2.0A
VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A
––– ––– -1.0 VDS = -12V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
QgTotal Gate Charge ––– 10 15 ID = -4.3A
Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V
trRise Time ––– 32 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0Ω
tfFall Time ––– 210 ––– RG = 89Ω
Ciss Input Capacitance ––– 830 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
μA
Ω
IDSS Drain-to-Source Leakage Current
nA
ns
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20μs PULSE WIDTH
Tj = 150°C
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
-ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = -12V
20μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-4.3A
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0 4 8 12 16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.3A
V =-10V
DS
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.9A
-3.4A
-4.3A
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0 10203040
-ID , Drain Current ( A )
0.00
0.05
0.10
0.15
0.20
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = -4.5V
VGS = -2.5VVGS = -1.8V
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.3
0.4
0.5
0.6
0.7
0.8
-VGS(th) Gate threshold Voltage (V)
ID = -250μA
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = -4.3A
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 B S C
MI L L IME T E R S
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B S C
DIME NS IONS
INCH E S
b0.30
bbb
0.15
.008
ccc .006
0.25 BS CL1
L 0.40 0.60
.0118 B S C
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S UR F 0
3X L
L1
H4
7
2.10
e1 1.90 B SC .075 B S C
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
R E COMME NDE D F OOT PR INT
3X
3X
NOT E S
1. DIME NSIONING AND TOLERANCING PER ASME Y14.5M-1994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6 DI ME N S I ONS D AN D E 1 AR E ME AS UR ED AT DAT U M PL ANE H .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTR OLLING DIMENSION: MILLIME T ER.
7 DIMENSION L IS T HE LEAD LENGTH FOR SOL DERING TO A SUBS T RATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52 Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRLML6401PbF
MS L 1
(per JEDEC
J-S T D-020D
††
)
RoHS compliant
Yes
†
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
•
Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/28/2014