SPICE MODEL: MMST3904 MMST3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMST3906) A Dim Min Max Ultra-Small Surface Mount Package C A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal Available in Lead Free/RoHS Compliant Version (Note 2) B C Mechanical Data * * B E G Case: SOT-323 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * Marking (See Page 2): K2N K Terminal Connections: See Diagram M J D E L Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 C Ordering & Date Code Information: See Page 2 E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0 8 All Dimensions in mm Weight: 0.006 grams (approximate) B Maximum Ratings E @ TA = 25C unless otherwise specified Characteristic Symbol MMST3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1) Pd 200 mW RqJA 625 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30082 Rev. 6 - 2 1 of 3 www.diodes.com MMST3904 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 3/4 V IE = 10mA, IC = 0 ICEX 3/4 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL 3/4 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 3/4 3/4 300 3/4 3/4 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.25 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 3/4 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo 3/4 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 3/4 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 3/4 Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 3/4 MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF 3/4 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td 3/4 35 ns Rise Time tr 3/4 35 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Ordering Information Notes: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA (Note 4) Device Packaging Shipping MMST3904-7 SOT-323 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST3904-7-F. Marking Information YM K2N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2N Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30082 Rev. 6 - 2 2 of 3 www.diodes.com MMST3904 15 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 5 Cibo 50 Cobo 0 0.1 0 0 25 50 75 100 125 150 200 175 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1 TA = 125C 100 TA = +25C TA = -25C 10 IC IB = 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1000 0.1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE IC IB = 10 1 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30082 Rev. 6 - 2 3 of 3 www.diodes.com MMST3904