SMBTA06UPN NPN / PNP Silicon AF Transistor Array * High breakdown voltage 4 * Low collector-emitter saturation voltage 3 5 2 6 * Two (galvanic) internal isolated NPN/PNP 1 Transistor in one package * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Tape loading orientation Top View 6 5 4 Marking on SC74 package (for example W1s) corresponds to pin 1 of device B2 E2 6 5 4 TR2 TR1 W1s 1 2 3 C1 1 2 3 E1 B1 C2 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling EHA07177 SC74_Tape Type Marking SMBTA06UPN s2P Pin Configuration 1=E 2=B 3=C 4=E Package 5=B 6=C SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 Collector current IC Peak collector current, tp 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Value 500 1 Unit V mA A mA TS 115 C 1 -65 ... 150 2011-10-05 SMBTA06UPN Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 105 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter min. typ. max. V(BR)CEO 80 - - V(BR)CBO 80 - - V(BR)EBO 4 - - DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 80 V, IE = 0 - - 0.1 VCB = 80 V, IE = 0 , TA = 150 C - - 20 - - 100 Collector-emitter cutoff current ICEO nA VCE = 60 V, IB = 0 DC current gain2) - hFE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, VCE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 100 - MHz Ccb - 7 - pF Collector-emitter saturation voltage2) V IC = 100 mA, IB = 10 mA Base-emitter voltage2) IC = 100 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300s; D < 2% 2 2011-10-05 SMBTA06UPN DC current gain hFE = (IC) VCE = 1 V Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 EHP00821 10 3 EHP00819 10 3 C mA h FE 100 C 25 C -50 C 100 C 10 2 25 C 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 2 10 mA 10 10 0 3 0.0 0.1 0.2 0.3 0.4 0.5 C V Collector current IC = (VBE ) IC = (VBEsat), hFE = 10 VCE = 1V EHP00818 10 3 EHP00815 10 3 mA mA 100 C 25 C -50 C C 10 2 100 C 25 C -50 C C 10 2 5 5 10 1 10 1 5 5 10 0 10 0 5 5 0 0.5 0.8 V CEsat Base-emitter saturation voltage 10 -1 0.6 V 1.0 10 -1 1.5 0 0.5 V 1.0 1.5 V BE V BEsat 3 2011-10-05 SMBTA06UPN Collector cutoff current ICBO = (TA) VCBO = 80 V Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz fT CBO max 10 3 5 EHP00817 10 3 MHz EHP00820 10 4 nA 10 2 5 5 10 2 typ 10 1 5 5 10 0 5 10 1 10 0 10 -1 0 50 C 150 100 5 10 1 5 10 2 mA 10 3 C TA Collector-base capacitance Ccb = (VCB) Total power dissipation P tot = (TS) Emitter-base capacitance Ceb = (VEB) 65 pF 400 mW 50 300 45 Ptot CCB(CEB ) 55 40 250 35 200 30 25 150 CEB 20 100 15 10 50 5 0 0 CCB 4 8 12 16 V 0 0 22 VCB(VEB 20 40 60 80 100 120 C 150 TS 4 2011-10-05 SMBTA06UPN Permissible Pulse Load RthJS = (tp) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SC74 SMBTA06UPN Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 0.1 4 10 MAX. 5 2.5 0.1 6 0.25 0.1 0.15 +0.1 -0.06 (0.35) 10 MAX. 2.9 0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 6 2011-10-05 SMBTA06UPN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-05