2011-10-051
SMBTA06UPN
5
4
6
3
2
1
NPN / PNP Silicon AF Transistor Array
• High breakdown voltage
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Tape loading orientation
SC74_Tape
123
456
W1s
Direction of Unreeling
Top View Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07177
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
SMBTA06UPN s2P 1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 4
Collector current IC500 mA
Peak collector current, tp ≤ 10 ms ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 115 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
2011-10-052
SMBTA06UPN
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 105 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 80 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 4 - -
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
VCE = 60 V, IB = 0
ICEO - - 100 nA
DC current gain2)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
VCEsat - - 0.25 V
Base-emitter voltage2)
IC = 100 mA, VCE = 1 V
VBE(ON) - - 1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 7 - pF
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2011-10-053
SMBTA06UPN
DC current gain hFE = ƒ(IC)
VCE = 1 V
EHP00821
10
h
C
FE
10
1
10
-1 0
Ι
100 C
25 C
-50 C
1
10
2
10
3
10
mA
2
10
3
10
0
10
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0.0
10
EHP00819
CEsat
V
0
3
10
Ι
C
mA
1
10
2
10
C
5
5
100
25 C
-50 C
0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
EHP00818
10
0V
BEsat
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 ˚C
25 ˚C
-50 ˚C
Collector current IC = ƒ(VBE)
VCE = 1V
EHP00815
10
0V
BE
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 C
25 C
-50 C
2011-10-054
SMBTA06UPN
Collector cutoff current ICBO = ƒ(TA)
VCBO = 80 V
EHP00820
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00817
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
55
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
2011-10-055
SMBTA06UPN
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-10-056
SMBTA06UPN
Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
MB6x
0.95
1.9
0.15 -0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2 M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
2011-10-057
SMBTA06UPN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
