SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS FMMT38A 4J
FMMT38B 5J
FMMT38C 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 800 mA
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 100 nA VCB
=60V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB
=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1.8 V IC=800mA, VCE
=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE 500
1000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
FMMT38B 2000
4000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
FMMT38C 5000
10000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps)
VBE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
V - (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
hFE v IC
h- Normalised Gain
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
0.6
0.001 0.01 0.1 1 10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
V
CE
=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal impedance
Thermal Resistance (°C/W)
100m
1s
100ms
DC
1m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1 10 100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101 3 - 100
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS FMMT38A 4J
FMMT38B 5J
FMMT38C 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 800 mA
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 100 nA VCB
=60V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB
=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1.8 V IC=800mA, VCE
=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE 500
1000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
FMMT38B 2000
4000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
FMMT38C 5000
10000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT38A
FMMT38B
FMMT38C
C
B
E
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps)
VBE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
V - (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
hFE v IC
h- Normalised Gain
10
1.0
0.5
2.0
1.5
V
CE
=5V
I
C
/I
B
=100
10
0.6
0.001 0.01 0.1 1 10
I
C
/I
B
=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
V
CE
=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal impedance
Thermal Resistance (°C/W)
100m
1s
100ms
DC
1m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
1 10 100
10m
100m
1
FMMT38A
FMMT38B
FMMT38C
3 - 101 3 - 100
