FMMT38A FMMT38B FMMT38C ISSUE 3 AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55C 0.8 +25C 0.6 +100C 0.4 +175C h V - (Volts) 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55C 0.2 0.001 0.01 0.1 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC V =5V I /I =100 C 2.0 CE B V - (Volts) 1.0 +25C +100C V -55C 1.5 1.0 0.001 0.01 0.1 1 0.5 0.001 10 +100C +175C 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Thermal Resistance (C/W) 1 150 D=1 (D.C.) 100m 100 D=0.5 10m 50 0 0.0001 DC 1s 100ms 10ms 1ms 100us 1m D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 Pulse Width (seconds) 100m 1 10 VCE - Collector Emitter Voltage (V) Maximum transient thermal impedance 3 - 101 SYMBOL Safe Operating Area VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 800 mA Continuous Collector Current IC 300 mA 330 mW -55 to +150 C Power Dissipation at Tamb=25C Ptot Operating and Storage Temperature Range Tj:Tstg 100 SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=10 A, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10 A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* Static Forward Current Transfer Ratio D=0.2 D=0.1 B PARAMETER PARAMETER -55C +25C +175C 0.5 FMMT38A 4J FMMT38B 5J FMMT38C 7J ELECTRICAL CHARACTERISTICS (at Tamb = 25C). 2.0 1.5 E C ABSOLUTE MAXIMUM RATINGS. +25C IC - Collector Current (Amps) - (Volts) PARTMARKING DETAILS +100C 0.6 0 10 V =5V 1.2 1.0 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FMMT38A hFE 500 1000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* FMMT38B 2000 4000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* FMMT38C 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 100 FMMT38A FMMT38B FMMT38C ISSUE 3 AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55C 0.8 +25C 0.6 +100C 0.4 +175C h V - (Volts) 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55C 0.2 0.001 0.01 0.1 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC V =5V I /I =100 C 2.0 CE B V - (Volts) 1.0 +25C +100C V -55C 1.5 1.0 0.001 0.01 0.1 1 0.5 0.001 10 +100C +175C 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Thermal Resistance (C/W) 1 150 D=1 (D.C.) 100m 100 D=0.5 10m 50 0 0.0001 DC 1s 100ms 10ms 1ms 100us 1m D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 Pulse Width (seconds) 100m 1 10 VCE - Collector Emitter Voltage (V) Maximum transient thermal impedance 3 - 101 SYMBOL Safe Operating Area VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 800 mA Continuous Collector Current IC 300 mA 330 mW -55 to +150 C Power Dissipation at Tamb=25C Ptot Operating and Storage Temperature Range Tj:Tstg 100 SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=10 A, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10 A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* Static Forward Current Transfer Ratio D=0.2 D=0.1 B PARAMETER PARAMETER -55C +25C +175C 0.5 FMMT38A 4J FMMT38B 5J FMMT38C 7J ELECTRICAL CHARACTERISTICS (at Tamb = 25C). 2.0 1.5 E C ABSOLUTE MAXIMUM RATINGS. +25C IC - Collector Current (Amps) - (Volts) PARTMARKING DETAILS +100C 0.6 0 10 V =5V 1.2 1.0 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS FMMT38A hFE 500 1000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* FMMT38B 2000 4000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* FMMT38C 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 100