ES1A - ES1D
ES1A-ES1D, Rev. C2001 Fairchild Semiconductor Corporation
Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
ES1A - ES1D
Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for
high efficiency.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Thermal Characteristics
Symbol
Parameter
Value
Units
PD Power Dissipation 1.47 W
RθJA Thermal Resistance, Junctio n to Ambient* 85 °C/W
RθJL Thermal Resistanc e, Junctio n to Lead* 35 °C/W
Symbol
Parameter
Device
Units
1A 1B 1C 1D
VF Forward Voltage @ 1.0 A 0.92 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, IRR = 0.25 A 15 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C 5.0
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 7.0 pF
Value
Symbol
Parameter 1A 1B 1C 1D
Units
VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 V
IF(AV) Average Rectified Forward Current, @ TA=120°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -50 to +150 °C
TJ Operating Junction Temperature -50 to +150 °C
*Device mounted on FR-4 PCB 0.013 mm.
ES1A - ES1D
ES1A-ES1D, Rev. C2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50
NONINDUCTIVE 50
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
12 51020 50100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
0.4 0.6 0.8 1 1.2 1.4
0.001
0.01
0.1
1
10
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Width = 300µµµµs
2% Duty Cycle
T = 25 C
º
A
0 20406080100120140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
0 25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
1.25
1.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUN TE D
ON 0. 2 x 0.2"
(5.0 x 5. 0 mm )
COPPER PAD AREAS
0.1 1 10 100
0
2
4
6
8
10
12
14
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
ES1A-ES1D, Rev. C
2001 Fairchild Semiconductor Corporation
ES1A - ES1D
Package Dimensions
Dimensions in Millimeters
SMA / DO - 214AC
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This datasheet contains the design specifications for
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