Low turn-on voltage
Fast switching
PN junction guard ring for transient and ESD protection
High speed switching applications
Circuit protecting
Voltage clamping
SOT-23
BAS70 Series
Schottky Diode
Applications
Features
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Maximum Ratings (TA = 25°C unless otherwise noted)
1/3
Schematic Diagram and Marking
BAS70BAS70-04
BAS70-06
BAS70-05
Marking: 73Marking: 74
Marking: 75Marking: 76
Parameter Symbol Unit
Value
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
VRRM
VRWM
VR
70 V
RMS Reverse voltage VR(RMS) 49 V
Forward Continuous Current IF 70 mA
Non-Repetitive Peak Forward Surge Current
@tp<1.0s IFSM 100 mA
Power Dissipation Pd 200 mW
Thermal Resistance, Junction to Ambient Air RθjA 625 °C/W
Operating Junction Temperature Range Tj -55 to +125 °C
Storage Temperature Range TSTG -65 to +150 °C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Typical Characteristic Curves(TA = 25°C unless otherwise noted)
2/3
Characteristic
c Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 700 VI(BR)= 10μA
Forward Voltage VF -
410
1000 mV
tP<300μs,IF=1.0mA
tP<300μs,IF=15mA
Reverse Leakage Current IR 10
-0nA
tP<300μs,VR=50V
Junction Capacitance Cj -2.0 pF
VR=0V,f=1.0MHz
Reverse Recovery Time trr 5.
-0ns
IF=IR=10mA to
IR=1.0mA,RL=100Ω
BAS70 Series
Schottky Diode
Sugguested Pad Layout
Unit : mm
SOT-23
Dim Min Max
A 2.70 3.10
B 1.10 1.50
C 1.0 Typical
D 0.4 Typical
E 0.35 0.48
G 1.80 2.00
H 0.02 0.1
J 0.1 Typical
K 2.20 2.60
All Dimensions in mm
A
B
C
D
E
J
H
K
G
0.90
0.80
2.00
0.95 0.95
Package Outline Dimensions
3/3 Doc.USBAS40xYD1.0
www.goodarksemi.com
SOT-23
BAS70 Series
Schottky Diode
