BAS70 Series Schottky Diode Features * Low turn-on voltage * Fast switching * PN junction guard ring for transient and ESD protection Applications SOT-23 * High speed switching applications * Circuit protecting * Voltage clamping Schematic Diagram and Marking BAS70 BAS70-04 Marking: 73 Marking: 74 BAS70-05 BAS70-06 Marking: 75 Marking: 76 Maximum Ratings (TA = 25C unless otherwise noted) Symbol VRRM VRWM VR Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage Value Unit 70 V RMS Reverse voltage VR(RMS) 49 V Forward Continuous Current IF 70 mA Non-Repetitive Peak Forward Surge Current @tp<1.0s IFSM 100 mA Power Dissipation Pd 200 Thermal Resistance, Junction to Ambient Air RjA 625 mW C/W Operating Junction Temperature Range Tj -55 to +125 C Storage Temperature Range TSTG -65 to +150 C 1/3 BAS70 Series Schottky Diode Electrical Characteristics Characteristic c (TA = 25C unless otherwise noted) Symbol Min Unit Test Condition Reverse Breakdown Voltage V(BR)R 70 0 V I(BR)= 10A Forward Voltage VF - mV tP<300s,IF=1.0mA tP<300s,IF=15mA Reverse Leakage Current IR - 100 nA tP<300s,VR=50V Junction Capacitance Cj - 2.0 pF VR=0V,f=1.0MHz Reverse Recovery Time trr - 5.0 ns IF=IR=10mA to IR=1.0mA,RL=100 Max 410 1000 Typical Characteristic Curves(TA = 25C unless otherwise noted) 2/3 BAS70 Series Schottky Diode SOT-23 Package Outline Dimensions A SOT-23 E K B J D G Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J H C K 0.1 Typical 2.20 2.60 All Dimensions in mm Sugguested Pad Layout 0.95 0.95 2.00 0.90 0.80 www.goodarksemi.com Unit : mm 3/3 Doc.USBAS40xYD1.0