© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 6
1Publication Order Number:
BSS138LT1/D
BSS138LT1
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
•Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications
•Miniature SOT−23 Surface Mount Package Saves Board Space
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 50 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
200
800
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg −55 to 150 °C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
1
2
Device Package Shipping†
ORDERING INFORMATION
BSS138LT1 SOT−23 3000 Tape & Reel
N−Channel
SOT−23
CASE 318
STYLE 21
J1 M G
G
MARKING
DIAGRAM
2
1
3
BSS138LT3 SOT−23 10,000 Tape & Reel
200 mA, 50 V
RDS(on) = 3.5 W
BSS138LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
BSS138LT3G SOT−23
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
1
J1 = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BSS138LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 − − Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
IDSS
−
−
−
−
−
−
0.1
0.5
5.0
mAdc
Gate−Source Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th) 0.5 −1.5 Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
W
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 − − mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss −40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss −12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss −3.5 5.0
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(on) − − 20 ns
Turn−Off Delay Time td(off) − − 20
1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
BSS138LT1
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
Figure 1. On−Region Characteristics
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55 -5 45 95 145
0.6
0.8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
4
0
QT
, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25°C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
Vgs(th) , VARIANCE (VOLTS)
1
TJ, JUNCTION TEMPERATURE (°C)
ID = 1.0 mA
-55 -5 45 95 145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150°C
25°C
-55°C
3.5
0.5
4
024 10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.1
8
0.6
0.2
0.5
13 957
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25°C
0.7
0.8
0.9
4.50.50
2.2
-30 20 70 120
2500 3000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
125°C
Figure 6. IDSS
1.0E-9
1.0E-8
10 15 20 25 30 35
1.0E-7
40
1.0E-6
1.0E-5
505045
150°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
BSS138LT1
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 7. On−Resistance versus Drain Current
0 0.1 0.2
2
5
6
Figure 8. On−Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 9. On−Resistance versus Drain Current
0.001
0.1
1
Figure 10. On−Resistance versus Drain
Current
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
ID, DIODE CURRENT (AMPS)
25°C
VGS = 2.5 V
TJ = 150°C
4
0 0.2 0.4 0.6
3
0.01
-55°C25°C
0.8
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.1 0.2
1
7
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
5
3
0
120
40
0
80
510
Ciss
15
0.05 0.15 0.25
150°C
-55°C
6
8
4
2
0.05 0.15 0.25
201.0 1.2
150°C
25°C
-55°C
8
9
7
100
20
60
Figure 12. Capacitance
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
2.5
3
ID, DRAIN CURRENT (AMPS)
25°C
VGS = 4.5 V
2
1.5
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
3
2
0.1 0.3 0.5
150°C
-55°C
3.5
4.5
2.5
1.5
0.1 0.3 0.5
150°C
25°C
-55°C
4
4.5
3.5
10
1
0.25 0.450.15 0.35
5
5.5
6
0.25 0.450.15 0.35
25
Coss
Crss
BSS138LT1
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BSS138LT1/D
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
