MMZ09312BT1
1
RF Device Data
Freescale Semiconductor, Inc.
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09312B is a 2--stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 400 to 1000 MHz such as
CDMA, GSM, LTE and ZigBeeRat operating voltages from 3 to 5 Volts.
Typical Performance: VCC1 =V
CC2 =V
BIAS =5Vdc,I
CQ =74mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
PAE
(%) Test Signal
900 MHz 24 31.5 --50.0 26.0 IS--95 CDMA
900 MHz 18.0 31.5 --50.0 10.8 1C W--CDMA TM1
900 MHz 17.0 31.5 --50.0 9.0 10 MHz LTE TM1.1
750 MHz 17.5 32.0 --50.0 15.3 LTE 10/20 MHz
450 MHz 29 33.0 --40.0 57.0 ZigBee
Features
Frequency: 400--1000 MHz
P1dB: 29.6 dBm @ 900 MHz
Power Gain: 31.7 dB @ 900 MHz
OIP3: 42 dBm @ 900 MHz
Active Bias Control (adjustable externally)
Single 3 to 5 V Supply
Performs Well with Digital Predistortion Systems
Single--ended Power Detector
Cost--effective 12--pin, 3 mm QFN Surface Mount Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Characteristic Symbol
450
MHz
900
MHz Unit
Small--Signal Gain (S21) Gp33.8 31.7 dB
Input Return Loss (S11) IRL -- 2 2 -- 1 5 dB
Output Return Loss (S22) ORL -- 2 5 -- 1 8 dB
Power Output @ 1dB
Compression
P1dB 28.8 29.6 dBm
1. VCC1 =V
CC2 =V
BIAS =5Vdc,T
A=25C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VCC 6 V
Supply Current ICC 550 mA
RF Input Power Pin 14 dBm
Storage Temperature Range Tstg --65 to +150 C
Junction Temperature TJ175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value (2) Unit
Thermal Resistance, Junction to Case
Case Temperature 84C, VCC1 =V
CC2 =V
BIAS =5Vdc
RJC 56 C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MMZ09312B
Rev. 2, 12/2014
400--1000 MHz, 31.7 dB
29.6 dBm
InGaP HBT LINEAR AMPLIFIER
MMZ09312BT1
QFN 3 3
Freescale Semiconductor, Inc., 2011--2012, 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Table 4. Electrical Characteristics (VCC1 =V
CC2 =V
BIAS = 5 Vdc, 900 MHz, TA=25C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) Gp29 31.7 —dB
Input Return Loss (S11) IRL — -- 1 5 —dB
Output Return Loss (S22) ORL —-- 1 8 —dB
Power Output @ 1dB Compression P1dB —29.6 —dBm
Third Order Output Intercept Point, Two--Tone CW OIP3 —42 —dBm
Noise Figure NF — 4 — dB
Supply Current ICQ 69 74 83 mA
Supply Voltage VCC — 5 — V
Table 5. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) Meets 2000 V for all pins except:
Pin 11 meets 400 V
Pin 8 meets 200 V
Class 0 Rating
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 6. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 1260 C
Figure 1. Functional Block Diagram Figure 2. Pin Connections
VBA2
VCC2
RFin
19
28
37
12 11 10
456
RFout
VCC1 GND
VBA1
VBIAS
RFout
GND GND PDET
VBA2
VCC2
RFin
RFout
VCC1 GND
VBA1
VBIAS
RFout
BIAS
CIRCUIT
BIAS
CIRCUIT
GND PDET
GND
MMZ09312BT1
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 5.0 V
C5
RF
INPUT
R1
L1
C10
L2
45 6
3
2
1
12 11 10
7
8
9
C4
RF
OUTPUT
BIAS
CIRCUIT
VCC2
PDET
L5
C11
L3
C3
L4
VCC1
C2
VBIAS
C1
R2
Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
4
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Figure 4. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 5.0 V
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
QFN 3x3--12M
Rev. 1
L1
RFIN
RFOUT
L2
C5
C4
R1
R2
C1
VBIAS(1)
VCC1
VCC2
C2
L4
L3
C10
L5 C11
C3
PDET
R3*
C8*
C9*
C6*
C7*
Table 7. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V
Figure 5. S11 versus Frequency versus
Temperature
1000
-- 2 0
-- 6
700
f, FREQUENCY (MHz)
760
-- 8
-- 1 0
-- 1 2
-- 1 4
-- 1 6
-- 1 8
S11 (dB)
-- 4 0 C
820 880 940
25C
85C
Figure 6. S21 versus Frequency versus
Temperature
1000
5
40
700
f, FREQUENCY (MHz)
760
35
30
25
15
10
S21 (dB)
-- 4 0 C
820 880 940
25C85C
Figure 7. S22 versus Frequency versus
Temperature
1000
-- 3 5
0
700
f, FREQUENCY (MHz)
760
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
S22 (dB)
-- 4 0 C
820 880 940
25C
85C
VCC1 =V
CC2 =V
BIAS =5Vdc VCC1 =V
CC2 =V
BIAS =5Vdc
VCC1 =V
CC2 =V
BIAS =5Vdc
20
6
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 5.0 V
270
60
90
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
-- 3 0
-- 3 3
-- 3 6
-- 5 4
21
-- 4 5
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
-- 3 9
-- 5 1
11 13
120
150
180
210
240
-- 4 8
-- 5 7
27
300
30
0
-- 4 2
15 17 19 2523
-- 4 0 C
25C
85C
-- 4 0 C
25C85C
ACPR
45
10
15
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
34
32
30
18
21
24
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
20
11 13
20
25
30
35
40
22
16
27
50
5
0
26
15 17 19 2523
-- 4 0 C
25C
85C
-- 4 0 C
25C
85C
36
Gain
PAE
Figure 10. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
30
28
26
20
24
700
18
22
760
-- 4 0 C
25C
85C
32
820 880 1000940
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
ICC
VCC1 =V
CC2 =V
BIAS =5Vdc
-- 6 0
VCC1 =V
CC2 =V
BIAS =5Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
VCC1 =V
CC2 =V
BIAS =5Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
Figure 11. Power Detector versus Output Power
versus Temperature
Pout, OUTPUT POWER (dBm)
1.8
1.6
1.4
0.2
21
0.8
PDET, POWER DETECTOR (V)
1.2
0.4
11 13
0.6
0
27
1
15 17 19 2523
25C
85C
-- 4 0 C
2
VCC1 =V
CC2 =V
BIAS =5Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
MMZ09312BT1
7
RF Device Data
Freescale Semiconductor, Inc.
Figure 12. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 5.0 V
C5
RF
INPUT
R1
L1
C10
L2
45 6
3
2
1
12 11 10
7
8
9
C4
RF
OUTPUT
BIAS
CIRCUIT
VCC2
PDET
L5
C11
L3
C3
L4
VCC1
C2
VBIAS
C1
R2
Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 5.6 pF Chip Capacitor 04023J5R6BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
8
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Figure 13. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 5.0 V
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
QFN 3x3--12M
Rev. 1
L1
RFIN
RFOUT
L2
C5
C4
R1
R2
C1
VBIAS(1)
VCC1
VCC2
C2
L4
L3
C10
L5 C11
C3
PDET
R3*
C8*
C9*
C6*
C7*
Table 8. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 5.6 pF Chip Capacitor 04023J5R6BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
9
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V
-- 3 5
800
f, FREQUENCY (MHz)
Figure 14. S11 versus Frequency
S11 (dB)
860 920 980 1040 1100
-- 3 0
-- 2 5
-- 2 0
-- 1 5
-- 1 0
-- 5
0
VCC1 =V
CC2 =V
BIAS =5Vdc
5
40
800
f, FREQUENCY (MHz)
Figure 15. S21 versus Frequency
S21 (dB)
30
15
860 920 980 1040 1100
10
20
25
35
VCC1 =V
CC2 =V
BIAS =5Vdc
800
-- 1 0
-- 2 0
-- 3 0
f, FREQUENCY (MHz)
Figure 16. S22 versus Frequency
S22 (dB)
-- 1 5
-- 2 5
-- 3 5
-- 5
0
860 920 980 1040 1100
VCC1 =V
CC2 =V
BIAS =5Vdc
10
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V
16
36
11
22
20
Pout, OUTPUT POWER (dBm)
Figure 17. Power Gain and Power Added
Efficiency versus Output Power
Gps, POWER GAIN (dB)
18
Gain
PAE
24
26
13 15 17 19 21 23 25 27
28
30
32
34
0
50
15
10
5
20
25
30
35
40
45
PAE, POWER ADDED EFFICIENCY (%)
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 900 MHz, W--CDMA
-- 6 0
6
-- 3 0
Pout, OUTPUT POWER (dBm)
Figure 18. ACPR versus Output Power
-- 3 5
-- 4 0
-- 4 5
-- 5 0
810121416182022
ACPR (dBc)
LTE 10 MHz
W--CDMA
-- 5 5
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 900 MHz
Figure 19. Power Detector Output versus
Output Power
Pout, OUTPUT POWER (dBm)
Vdet, POWER DETECTOR OUTPUT (V)
LTE 10 MHz
0
2
0
0.5 W--CDMA
1
510152025
0.25
0.75
1.25
1.5
1.75 VCC1 =V
CC2 =V
BIAS =5Vdc
f = 900 MHz
LTE 10 MHz
LTE 10 MHz 3GPP TM1.1
CF = 11.70 dB, Channel Bandwidth = 9 MHz
Adjacent Channel Bandwidth = 9 MHz
Channel Offset = 10 MHz
OPERATING CONDITIONS FOR FIGURES 17--19
W- CDMA
Single--Carrier W--CDMA 3GPP TM1
CF = 9.31 dB, Channel Bandwidth = 3.84 MHz
Adjacent Channel Bandwidth = 3.84 MHz
Channel Offset = 5MHz
MMZ09312BT1
11
RF Device Data
Freescale Semiconductor, Inc.
Figure 20. MMZ09312B Test Circuit Schematic — CDMA IS--95, 900 MHz, 3.3 V
C5
RF
INPUT
R1
L1
C10
L2
45 6
3
2
1
12 11 10
7
8
9
C4
RF
OUTPUT
BIAS
CIRCUIT
VCC2
PDET
L5
C11
L3
C3
L4
VCC1
C2
VBIAS
C1
R2
Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo
R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
12
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Figure 21. MMZ09312B Test Circuit Component Layout — CDMA IS--95, 900 MHz, 3.3 V
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
QFN 3x3--12M
Rev. 1
L1
RFIN
RFOUT
L2
C5
C4
R1
R2
C1
VBIAS(1)
VCC1
VCC2
C2
L4
L3
C10
L5 C11
C3
PDET
R3*
C8*
C9*
C6*
C7*
Table 9. MMZ09312B Test Circuit Component Designations and Values — CDMA IS--95, 900 MHz, 3.3 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 4.7 pF Chip Capacitor 04023J4R7BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo
R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
13
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V
Figure 22. S11 versus Frequency versus
Temperature
1000
-- 2 8
0
700
f, FREQUENCY (MHz)
760
-- 4
-- 8
-- 1 2
-- 1 6
-- 2 0
-- 2 4
S11 (dB)
-- 4 0 C
820 880 940
25C
85C
Figure 23. S21 versus Frequency versus
Temperature
1000
10
38
700
f, FREQUENCY (MHz)
760
34
30
26
18
14
S21 (dB)
-- 4 0 C
820 880 940
25C
85C
Figure 24. S22 versus Frequency versus
Temperature
1000
-- 2 8
0
700
f, FREQUENCY (MHz)
760
-- 4
-- 8
-- 1 2
-- 1 6
-- 2 0
-- 2 4
S22 (dB)
-- 4 0 C
820 880 940
25C
85C
VCC1 =V
CC2 =V
BIAS =3.3Vdc
22
VCC1 =V
CC2 =V
BIAS =3.3Vdc
VCC1 =V
CC2 =V
BIAS =3.3Vdc
14
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
TYPICAL CHARACTERISTICS — CDMA IS--95, 900 MHz, 3.3 V
360
80
120
Figure 25. ACPR versus Collector Current
versus Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
0
-- 6
-- 1 2
-- 4 8
20
-- 3 0
ICC, COLLECTOR CURRENT (mA)
ACPR (dBc)
-- 1 8
-- 4 2
10 12
160
200
240
280
320
-- 3 6
-- 5 4
26
400
40
0
-- 2 4
14 16 18 2422
-- 4 0 C
25C
85C
-- 4 0 C
25C
85C
ACPR
45
10
15
Figure 26. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
Pout, OUTPUT POWER (dBm)
32
30
28
16
20
22
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
26
18
10 12
20
25
30
35
40
20
14
26
50
5
0
24
14 16 18 2422
-- 4 0 C
25C
85C
-- 4 0 C
25C
85C
34
Gain
PAE
Figure 27. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
28
26
24
18
22
700
16
20
760
-- 4 0 C
25C
85C
30
820 880 1000940
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
ICC
VCC1 =V
CC2 =V
BIAS =3.3Vdc
-- 6 0
VCC1 =V
CC2 =V
BIAS =3.3Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
Figure 28. Power Detector versus Output Power
versus Temperature
Pout, OUTPUT POWER (dBm)
2.7
2.4
2.1
0.3
20
1.2
PDET, POWER DETECTOR (V)
1.8
0.6
10 12
0.9
0
26
1.5
14 16 18 2422
25C
85C
-- 4 0 C
3
VCC1 =V
CC2 =V
BIAS =3.3Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
VCC1 =V
CC2 =V
BIAS =3.3Vdc,f=900MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
MMZ09312BT1
15
RF Device Data
Freescale Semiconductor, Inc.
Figure 29. MMZ09312B Test Circuit Schematic — UMTS/LTE, 900 MHz, 3.3 V
C5
RF
INPUT
R1
L1
C10
L2
45 6
3
2
1
12 11 10
7
8
9
C4
RF
OUTPUT
BIAS
CIRCUIT
VCC2
PDET
L5
C11
L3
C3
L4
VCC1
C2
VBIAS
C1
R2
Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo
R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
16
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Figure 30. MMZ09312B Test Circuit Component Layout — UMTS/LTE, 900 MHz, 3.3 V
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
QFN 3x3--12M
Rev. 1
L1
RFIN
RFOUT
L2
C5
C4
R1
R2
C1
VBIAS(1)
VCC1
VCC2
C2
L4
L3
C10
L5 C11
C3
PDET
R3*
C8*
C9*
C6*
C7*
Table 10. MMZ09312B Test Circuit Component Designations and Values — UMTS/LTE, 900 MHz, 3.3 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 6.8 pF Chip Capacitor 04023J6R8BBSTR AVX
L1 8.2 nH Chip Inductor LL1608--FSL8N2JL TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 33 nH Chip Inductor 0402CS--33NXGLW Coilcraft
L4 22 nH Chip Inductor 0402CS--22NXGLW Coilcraft
L5 3.3 nH Chip Inductor 0603CS--3N3XJLW Coilcraft
R1 82 , 1/16 W Chip Resistor RC0402JR--07820RL Yageo
R2 470 , 1/16 W Chip Resistor RC0402JR--07471RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
17
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V
-- 3 5
800
f, FREQUENCY (MHz)
Figure 31. S11 versus Frequency
S11 (dB)
860 920 980 1040 1100
-- 3 0
-- 2 5
-- 2 0
-- 1 5
-- 1 0
-- 5
0
VCC1 =V
CC2 =V
BIAS =3.3Vdc
5
40
800
f, FREQUENCY (MHz)
Figure 32. S21 versus Frequency
S21 (dB)
30
15
860 920 980 1040 1100
10
20
25
35
VCC1 =V
CC2 =V
BIAS =3.3Vdc
800
-- 1 0
-- 2 0
-- 3 0
f, FREQUENCY (MHz)
Figure 33. S22 versus Frequency
S22 (dB)
-- 1 5
-- 2 5
-- 3 5
-- 5
0
860 920 980 1040 1100
VCC1 =V
CC2 =V
BIAS =3.3Vdc
18
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 3.3 V
16
36
6
22
20
Pout, OUTPUT POWER (dBm)
Figure 34. Power Gain and Power Added
Efficiency versus Output Power
Gps, POWER GAIN (dB)
18
Gain
PAE
24
26
810121416182022
28
30
32
34
0
25
7.5
5
2.5
10
12.5
15
17.5
20
22.5
PAE, POWER ADDED EFFICIENCY (%)
VCC1 =V
CC2 =V
BIAS =3.3Vdc
f = 900 MHz, W--CDMA
-- 6 0
6
-- 3 0
Pout, OUTPUT POWER (dBm)
Figure 35. ACPR versus Output Power
-- 3 5
-- 4 0
-- 4 5
-- 5 0
810121416182022
ACPR (dBc)
LTE 10 MHz
W--CDMA
-- 5 5
VCC1 =V
CC2 =V
BIAS =3.3Vdc
f = 900 MHz
Figure 36. Power Detector Output versus
Output Power
Pout, OUTPUT POWER (dBm)
Vdet, POWER DETECTOR OUTPUT (V)
LTE 10 MHz
0
2
0
0.5 W--CDMA
1
510152025
0.25
0.75
1.25
1.5
1.75 VCC1 =V
CC2 =V
BIAS =3.3Vdc
f = 900 MHz
W- CDMA
Single--Carrier W--CDMA 3GPP TM1
CF = 9.31 dB, Channel Bandwidth = 3.84 MHz
Adjacent Channel Bandwidth = 3.84 MHz
Channel Offset = 5MHz
OPERATING CONDITIONS FOR FIGURES 34--36
LTE 10 MHz
LTE 10 MHz 3GPP TM1.1
CF = 11.70 dB, Channel Bandwidth = 9 MHz
Adjacent Channel Bandwidth = 9 MHz
Channel Offset = 10 MHz
MMZ09312BT1
19
RF Device Data
Freescale Semiconductor, Inc.
Figure 37. MMZ09312B Test Circuit Schematic — ZigBee, 450 MHz, 5.0 V
C5
RF
INPUT
R1
L1
C10
L2
45 6
3
2
1
12 11 10
7
8
9
C4
RF
OUTPUT
BIAS
CIRCUIT
VCC2
PDET
L5
C11
L3
C3
L4
VCC1
C2
VBIAS
C1
R2
Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX
L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO
L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO
L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
Note: Component numbers C6, C7, C8, C9 and R3 are labeled on board but not placed.
20
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Figure 38. MMZ09312B Test Circuit Component Layout — ZigBee, 450 MHz, 5.0 V
(1) VBIAS [Board] supplies VBA1,V
BA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C8*, C9* and R3* are labeled on board but not placed.
QFN 3x3--12M
Rev. 1
L1
RFIN
RFOUT
L2
C5
C4
R1
R2
C1
VBIAS(1)
VCC1
VCC2
C2
L4
L3
C10
L5 C11
C3
PDET
R3*
C8*
C9*
C6*
C7*
Table 11. MMZ09312B Test Circuit Component Designations and Values — ZigBee, 450 MHz, 5.0 V
Part Description Part Number Manufacturer
C1, C2 1F Chip Capacitors GRM155R61A105KE15 Murata
C3 4.7 F Chip Capacitor GRM188R60J475KE19 Murata
C4 470 pF Chip Capacitor GRM1555C1H471JA01 Murata
C5 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C6, C7, C8, C9 Components Not Placed
C10 3.9 pF Chip Capacitor 04023J3R9BBSTR AVX
C11 10 pF Chip Capacitor 04023J10R0BBSTR AVX
L1 18 nH Chip Inductor LL1608--FSL18N0S TOKO
L2 1.2 nH Chip Inductor LL1608--FSL1N2S TOKO
L3 3.9 nH Chip Inductor LL1608--FSL3N9S TOKO
L4 12 nH Chip Inductor LL1608--FSL12N0S TOKO
L5 12 nH Chip Inductor 0603CS--12NXJL Coilcraft
R1 330 , 1/16 W Chip Resistor RC0402JR--07331RL Yageo
R2 1.5 k, 1/16 W Chip Resistor RC0402JR--07152RL Yageo
R3 Component Not Placed
PCB 0.014,r=3.7 FR408 Isola
(Test Circuit Component Designations and Values table repeated for reference.)
MMZ09312BT1
21
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V
Figure 39. S11 versus Frequency
700
-- 4 0
-- 5
400
f, FREQUENCY (MHz)
460
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
-- 3 5
S11 (dB)
520 580 640
Figure 40. S21 versus Frequency
700
5
40
400
f, FREQUENCY (MHz)
460
35
30
25
15
10
S21 (dB)
520 580 640
Figure 41. S22 versus Frequency
700
-- 3 5
0
400
f, FREQUENCY (MHz)
460
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
S22 (dB)
520 580 640
20
VCC1 =V
CC2 =V
BIAS =5Vdc VCC1 =V
CC2 =V
BIAS =5Vdc
VCC1 =V
CC2 =V
BIAS =5Vdc
22
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
TYPICAL CHARACTERISTICS — ZIGBEE, 450 MHz, 5.0 V
2315 17 2919 21 2725
45
10
15
Figure 42. Power Gain versus Power Added
Efficiency versus Output Power, CW
Pout, OUTPUT POWER (dBm)
36
34
32
20
23
26
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
22
15 17
20
25
30
35
40
24
18
29
50
5
0
28
19 21 2725
38
Gain
PAE
Figure 43. P1dB versus Frequency, CW
f, FREQUENCY (MHz)
30
28
26
20
24
400
18
22
440
32
480 520 640600
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
VCC1 =V
CC2 =V
BIAS =5Vdc
Figure 44. Power Detector versus Output Power, CW
Pout, OUTPUT POWER (dBm)
3.6
3.2
2.8
0.4
1.6
PDET, POWER DETECTOR (V)
2.4
0.8
1.2
0
2
4
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 450 MHz
VCC1 =V
CC2 =V
BIAS =5Vdc
f = 450 MHz
560
MMZ09312BT1
23
RF Device Data
Freescale Semiconductor, Inc.
Figure 45. PCB Pad Layout for QFN 3 3
3.00
3.402.00
0.50
0.30
0.70
1.6 1.6 solder pad with
thermal via structure. All
dimensions in mm.
Figure 46. Product Marking
MA03
WLYW
24
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
PACKAGE DIMENSIONS
MMZ09312BT1
25
RF Device Data
Freescale Semiconductor, Inc.
26
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
MMZ09312BT1
27
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2011 Initial Release of Data Sheet
1Feb. 2012 Typical Performance table: changed Pout at 750 MHz from 19.5 to 17.5 dBm to reflect recent performance
measurements, p. 1
Figs. 3, 12 and 21, MMZ09312B Test Circuit Schematic: corrected L1 inductor label in test circuit
schematics, pp. 3, 7 and 11
2Dec. 2014 Typical Performance table: added 900 MHz, 1C W--CDMA TM1 and 900 MHz, 10 MHz LTE TM1.1, p. 1
Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
Added application circuit for UMTS/LTE, 900 MHz, 5.0 V as follows: schematic, component designations
and values, component layout, and typical characteristic performance graphs, pp. 7--10
Added application circuit for UMTS/LTE, 900 MHz, 3.3 V as follows: schematic, component designations
and values, component layout, and typical characteristic performance graphs, pp. 15--18
Fig. 46, Product Marking: updated date code line to reflect improved traceability information, p. 23
Added Failure Analysis information, p. 27
28
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
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information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
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disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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E2011--2012, 2014 Freescale Semiconductor, Inc.
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Document Number: MMZ09312B
Rev. 2, 12/2014
