INTERSIL FEATURES e Low Capacitance * Up to 6500 uymho Transconductance ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature -65C to +200C Operating Junction Temperature +200C Lead Temperature (Soldering, 10 sec time timit) +260C Maximum Power Dissipation Device Dissipation @ Free Air Temperature 300 mw Linear Derating 1.7 mW/C Maximum Voltages & Current Ve6s Gate to Source Voltage -50 V Vep Gate to Drain Voltage ~50 V Ig Gate Current 10 mA ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3821, 2N3822 N-Channel JFET PIN CONFIGURATION T0-72 G D c $ CHIP TOPOGRAPHY 5003B 0 Bx oe \ so p 0025 * 0025 1 - ne] gee ORDERING INFORMATION TO-72 WAFER DICE 2N3821_ | 2N3821/W_| 2N3821/D 2N3822 | 2N3822/W | 2N3822/D 2N3821 2N3822 . PARAMETER MIN MAX MIN MAX UNIT TEST CONDITIONS : -0.1 -0.1 nA _ . \gss Gate Reverse Current 07 "O41 uA VoGs = -30 V, Vps = 0 750C BVGss Gate-Source Breakdown Voltage -50 -50 Ig =-1 yA, Vpg=0 VGSioff} Gate-Source Cutoff Voltage -4 -6 Vv Vos = 18 V,Ip =0.5nA 0.5 -2 Vos = 15 V,Ip=50uA VGS Gate-Source Voltage Fj a Vos 215 Voip = 200 pA Ipss Saturation Drain Current 05 2.5 2 10 mA Vps = 15 V, Vgs = 0 (Note 3) Common-Source Forward _ Sts Transconductance (Note 1) 1500 | 4500 3000 | 6500 f= kHz Common-Source Forward n f= lyfsl Transadmittance 1500 3000 umbho 100 MHz Common-Source Output Sos Conductance (Note 1) "0 20 Vos = 15 V, Vag =0 fe kee Ciss common Source Input 6 6 apacitance F (=1MH2 Common-Source Reverse Transfer P Crss Capaci 3 3 pacitance NF Noise Figure 5 5 dB Vos = 15 V. Vas = 0. ~ Rgen = 7 meg, BW = 5 Hz f=10Hz 7 av : 70. Bw- e Equivalent Input Noise Voltage 200 200 lar Vos = 15 V, Vgs=0, BW=5Hz NOTE: 1. These parameters are measured during a 2 msc interval 100 msec after d-c power is applied. 1-55