© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 22 1Publication Order Number:
BZX84C2V4LT1/D
BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
250 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o
f
this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
BZX84BxxxLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
BZX84CxxxLT3G 10,000 /
Tape & Reel
BZX84BxxxLT3G 10,000 /
Tape & Reel
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
CASE 318
STYLE 8
3
Cathode 1
Anode
MARKING DIAGRAM
1
XXXMG
G
XXX = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation may vary depending up-
on manufacturing location.
(Note: Microdot may be in either location)
SZBZX84BxxxLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
SZBZX84CxxxLT3G 10,000 /
Tape & Reel
SOT−23
(Pb−Free)
SZBZX84CxxxLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
SZBZX84BxxxLT3G 10,000 /
Tape & Reel
SOT−23
(Pb−Free)
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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2
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
250
2.0
500
mW
mW/°C
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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3
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device* Device
Marking
VZ1 (Volts)
@I
ZT1 =5mA
(Note 3) ZZT1
(W)
@ IZT1 =
5 mA
VZ2 (V)
@I
ZT2 =1mA
(Note 3) ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@I
ZT3 =20mA
(Note 3) ZZT3
(W)
@ IZT3 =
20 mA
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max VR
Volts
IR
mA@Min Max
BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450
BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450
BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450
BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450
BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450
BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450
BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450
BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260
BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225
BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200
BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130
BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device* Device
Marking
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@I
ZT2 = 0.1 m-
AZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@I
ZT3 =10mA ZZT3
Below
@ IZT3 =
10 mA
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max VR
(V)
IR
mA@Min Max
BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Includes SZ-prefix devices where applicable.
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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4
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
ZZT (W) @
IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT = 5 mA C (pF)
@ VR =0,
f = 1 MHz
IR@VR
Min Nom Max Max mAVolts Min Max
BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 5 1 −3.5 0 450
BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260
BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225
BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200
BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185
BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155
BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140
BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135
BZX84B9V1LT1G, T3G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130
BZX84B10LT1G T2E 9.8 10 10.2 20 0.2 7 4.5 8 130
BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130
BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110
BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105
BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100
BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85
BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device* Device
Marking
VZ (Volts) @ IZT = 2 mA
(Note 4)
ZZT (W) @
IZT = 2 mA
(Note 4)
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT = 2 mA C (pF)
@ VR =0,
f = 1 MHz
IR@VR
Min Nom Max Max mAVolts Min Max
BZX84B27LT1G T27 26.5 27 27.5 80 0.05 18.9 21.4 25.3 70
*Includes SZ-prefix devices where applicable.
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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5
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
-3
-2
-1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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6
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)μ
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
-55°C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V) Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
SOLDERING FOOTPRINT
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
BZX84C2V4LT1/D
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