ze o ff 4347254 ooan2es 3 &f MOTORCLA SC XSTRS/R F . poe T-29-a9 CASE 20-03, STYLE 8 TO-72 (TO-206AF) MAXIMUM RATINGS 3c Rating Symbol Value Unit Collector-Emitter Voitage VCE20 60 Vde (Base 1 and Base 2 open) 2 Collector-Base Voltage Vcp1 80 Vde 1 Emitter-Base Voltage VezB1 12 Vde afolt, Collector Current Continuous Ie 40 Adc 4 E; Bz 4 1Eg Total Device Dissipation @ Ta = 26C Pp 0.5 Watt Lerate above 26C 38 mwre DARLINGTON TRANSISTOR Total Davice Dissipation @ Tc = 25C Pp 1.8 Watts NPN SILICON Derate above 25C 10.5 mWwrc Operating and Storage Junction Ty, Tstg | 65 to +200 C Temperature Range - Refer to 2N998 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Ch isti | Symbol | Min Max Unit OFF CHARACTERISTICS Coillector-Emitter Breakdown Voltage(1) V(BR)CE20 _ Vde {lg = 10 mAde, Ip1 = 0} Collector-Base Breakdown Voltage V(BR)CB10 - Vde (ic = 10 pAde, leg = 0) Emitter-Base Breakdown Voltage V(BR)E2B10 12 - Vde (leg = 10 pAde, Ic = 0) Collector Cutoff Current tcp10 pAdc (Vcop1 = 60 Vde, Ie = 0) - 0.01 (Vcp1 = 60 Vde, Ie = 0, Ta = 150C) - 10 Emitter Cutoff Current 'e2810 _ 10 nAdc (Ve1E2 = 10 Vde, Ig = 0) ON CHARACTERISTICS DC Current Gain hre 2000 10,000 - (I = 10 mAde, VcE2 = 5.0 Vde, Ip2 = 0) Collector-Emitter Saturation Voltage VCE2(sat) - 1.0 Vde (Ic = 10 mAde, Ig1 = 1.0 mAdc) Base-Emitter Saturation Voltage VBE2(sat) _ 17 Vde (ic = 10 mAde, Ig = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobie - 10 pF (Vegi = 10 Vde, Igg = 0, f = 140 kHz) Small-Signal Current Gain hfe 1500 15,000 - (Ig = 10 mAdc, Vcg2 = 5.0 Vde, f = 1.0 kHz) Current Gain Bandwidth Product (Each Unit) Ibfal 5.0 - - (Ie = 10 mAde, Vce1 or Vog2 = 10 Vdc, f = 20 MHz) Noise Figure (Input Stage Only) NF - 10 dB (ic = 50 pAdc, Vcg = 5.0 Vde, Rg = 3.0 kohms, f = 1.0 kHz, BW = 100 Hz) (1) Pulse Test: Pulse Width < 12 ms, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-58