MMST3904 - ROHM Electronics - Datasheet.Company

UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors

NPN General Purpose Transistor

UMT3904 / SST3904 / MMST3904 / 2N3904

!

!!

!Features

1) BVCEO > 40V (IC = 1mA)

2) Complements the UMT3906 / SST3906 / MMST3906

/ 2N3906.

!

!!

!Package, marking and packaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit

(pieces)

UMT3904

UMT3

R1A

T106

3000

SST3904

SST3

R1A

T116

3000

MMST3904

SMT3

R1A

T146

3000

TO-92

-

T93

3000

2N3904

!

!!

!Absolute maximum ratings (Ta = 25°C)

2N3904

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

Tj

Tstg

Limits

60

40

6

0.2

0.35

150

−55~+150

Unit

V

A

W

PC

0.2

0.625

*

°C

*

When mounted on a 7 x 5 x 0.6 mm ceramic board.

SST3904, MMST3904

UMT3904,

SST3904,

MMST3904

!

!!

!External dimensions (Units : mm)

UMT3904

SST3904

MMST3904

2N3904

0~0.1

0.2Min.

2.4

±

0.2

1.3

0.95

0.45±0.1

0.15

0.4

2.9±0.2

1.9±0.2

0.95 0.95

+

0.2

−

0.1

−0.1

+0.2

+0.1

−0.06

+0.1

−0.05

(2)

(1)

(3)

0~0.1

2.8

±

0.2

1.6

0.3

~

0.6

1.1

0.8±0.1

0.15

0.4

2.9±0.2

1.9±0.2

0.950.95

+

0.2

−

0.1

−0.1

+0.2

+0.1

−0.06

+0.1

−0.05

(2)

(1)

(3)

0~0.1

(2)(1)

(3)

0.1

~

0.4

2.1

±

0.1

1.25

±

0.1

0.9±0.1

0.2 0.7±0.1

0.15±0.05

0.3

2.0±0.2

1.3±0.1

0.65 0.65

+0.1

−0

4.8

±

0.2

(12.7Min.)

4.8±0.2 3.7±0.2

50.45±0.1 2.3

0.5 +0.15

−0.05

2.5 +0.3

−0.1

(1) (2) (3)

All terminals have same dimensions

ROHM : UMT3

EIAJ : SC-70 (1) Emitter

(2) Base

(3) Collector

ROHM : SST3

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59 (1) Emitter

(2) Base

(3) Collector

ROHM : TO-92

EIAJ : SC-43 (1) Emitter

(2) Base

(3) Collector

2.5Min.

!

!!

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BV

CBO

BV

CEO

BV

EBO

I

CES

I

EBO

60

40

6

-

50

V

nA

I

C

= 10µA

I

C

= 1mA

I

E

= 10µA

V

CB

= 30V

V

EB

= 3V

- - 0.95

Base-emitter saturation voltage V

BE(sat)

0.65 - 0.85 V

- - 0.3 I

C

/I

B

= 50mA/5mA

Collector-emitter saturation voltage V

CE(sat)

- - 0.2 VI

C

/I

B

= 10mA/1mA

I

C

/I

B

= 50mA/5mA

I

C

/I

B

= 10mA/1mA

30 - -

60 - -

DC current transfer ratio h

FE

100 - 300 -

70 - -

40 - - V

CE

= 1V , I

C

= 0.1mA

V

CE

= 1V , I

C

= 1mA

V

CE

= 1V , I

C

= 10mA

V

CE

= 1V , I

C

= 50mA

V

CE

= 1V , I

C

= 100mA

Transition frequency

Collector output capacitance f

T

Cob 300

--

4MHz

pF V

CE

= 20V , I

E

= −10mA, f = 100MHz

V

CB

= 10V , f = 100kHz

Emitter input capacitance Cib - - 8 pF V

EB

= 0.5V , f = 100kHz

Delay time td - - 35 ns V

CC

= 3V , V

BE(OFF)

= 0.5V , I

C

= 10mA , I

B1

= 1mA

V

CC

= 3V , V

BE(OFF)

= 0.5V , I

C

= 10mA , I

B1

= 1mA

Rise time tr - - 35 ns

Storage time tstg - - 200 ns V

CC

= 3V , I

C

= 10mA , I

B1

= −I

B2

= 1mA

V

CC

= 3V , I

C

= 10mA , I

B1

= −I

B2

= 1mA

Fall time tf - - 50 ns

~

UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors

!Electrical characteristic curves

0

8

6

4

2

10

200 10 I

B

=0

µ

A

5.0

10

15

20

25

30

35

40 Ta=25°C

COLLECTOR CURRENT : I

C

(

mA)

COLLECTOR-EMITTER VOLTAGE : V

CE

(

V)

Fig.1 Grounded emitter output

characteristics

0.1 1.0 10 100

0.2

0.3

0.1

0

COLLECTOR EMITTER SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.2 Collector-emitter saturation

voltage vs. collector current

Ta=25°C

I

C

/ I

B

=10

0.1 101.0 100 1000

100

10

500

5

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.3 DC current gain vs. collector current ( Ι )

Ta=25°C

V

CE

=1V 10V

5V

3V

0.1 101.0 100 1000

100

10

500

5

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : I

C

(

mA)

Fig.4 DC current gain vs. collector current ( ΙΙ )

V

CE

=5V

Ta=125°C

Ta=25°C

Ta=−55°C

UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors

0.01 1.00.1 10 100

100

10

500

5

AC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.5 AC current gain vs. collector current

Ta=25

°C

VCE=5V

f=1kHz

0.1 1.0 10 100

0.8

1.2

1.8

1.6

0.4

0

BASE EMITTER SATURATION VOLTAGE : VBE(sat)

(V)

COLLECTOR CURRENT : I

C

(

mA)

Fig.6 Base-emitter saturation

voltage vs. collector current

Ta=25°C

I

C

/ I

B

=10

0.1 1.0 10 100

0.8

1.2

1.8

1.6

0.4

0

BASE EMITTER VOLTAGE : VBE(ON)

(V)

COLLECTOR CURRENT : IC (

mA)

Fig.7 Grounded emitter propagation

characteristics

Ta=25°C

VCE=5V

1.0 10 100

100

1000

10

TURN ON TIME : ton (ns)

COLLECTOR CURRENT : I

C

(mA)

Fig.8 Turn-on time vs. collector

current

Ta=25°C

I

C

/ I

B

=10

V

CC

=3V

15V40V

1.0 10 100

100

1000

10

RISE TIME : tr (

ns)

COLLECTOR CURRENT : IC (

mA)

Fig.9 Rise time vs. collector

current

Ta=25°C

IC / IB=10

VCC=40V

Ta=25°C

IC=10I

B1

=10I

B2

1.0 10 100

100

1000

10

STORAGE TIME : ts (

ns)

COLLECTOR CURRENT : IC (

mA)

Fig.10 Storage time vs. collector

current

VCE=3V

40V

15V

1.0 10 100

100

1000

10

FALL TIME : tf (

ns)

COLLECTOR CURRENT : I

C

(

mA)

Fig.11 Fall time vs. collector

current

Ta=25°C

V

CC

=40V

I

C

/I

B

=10

0.1 1.0 10 100

10

50

0.5

1

CAPACITANCE (

pF)

REVERSE BIAS VOLTAGE (

V)

Fig.12 Input / output capacitance

vs. voltage

Ta=25

°C

f=1MHz

Cib

Cob

UMT3904 / SST3904 / MMST3904 / 2N3904

Transistors

0.1 1.0 10 100

10

1.0

100

0.1

COLLECTOR-EMITTER VOLTAGE : VCE (

V)

COLLECTOR CURRENT : IC (

mA)

Fig.13 Gain bandwidth product

Ta=25

°C

100MHz 200MHz 400MHz

300 MHz

500MHz

200MHz 100MHz

300MHz

1.0 10 100

100

1000

10

CURRENT GAIN-BANDWIDTH PRODUCT : f

T

(MHz)

COLLECTOR CURRENT : I

C

(mA)

Fig.14 Gain bandwidth product

vs. collector current

Ta=25°C

V

CE

=5V

0.1 1 10 100

10

1

100

0.1

h PARAMETER NORMALIZED TO 1mA

COLLECTOR CURRENT : IC (mA)

Fig.15 h parameter vs. collector current

VCE=5V

f=270Hz

hfe

hoe

hie hre

Ta=25°C

IC=1mA

hie=3.84kΩ

hfe=141

hre=5.03 × 10−5

hoe=5.58µS

07525 50 100 125 150

100n

10n

1n

10µ

1µ

0.1n

COLLECTOR CUTOFF CURRENT : I

CBO

(

A)

ANBIENT TEMPERATURE : Ta (

°C)

Fig.16 Noise characteristics ( Ι )

VCB=25V

0.01 0.1 1 10

10k

1k

100k

100

SOURCE RESISTANCE : RS (Ω)

COLLECTOR CURRENT : IC (

mA)

Fig.17 Noise characteristics ( ΙΙ )

Ta=25

°C

VCE=5V

f=10kHz

12dB

8dB

8.0dB

3dB

1.0dB

3.0dB

5dB

5.0dB

NF=1.0dB

0.01 0.1 1 10

10k

1k

100k

100

SOURCE RESISTANCE : RS (Ω)

COLLECTOR CURRENT : IC (mA)

Fig.18 Noise characteristics ( ΙΙΙ )

Ta=25°C

VCE=5V

f=1kHz

12dB

8dB

8.0dB

3dB

1.0dB

3.0dB

5dB

5.0dB

NF=1.0dB

0.01 0.1 1 10

10k

1k

100k

100

SOURCE RESISTANCE : R

S

(Ω)

COLLECTOR CURRENT : I

C

(mA)

Fig.19 Noise characteristics ( ΙV )

Ta=25

°C

V

CE

=5V

f=10Hz

12dB

8dB

8.0dB

3dB

5dB

5.0dB

NF=3.0dB

10 1k100 10k 100k

6

12

10

8

4

2

0

NOISE FIGURE : NF (

dB)

FREQUENCY : f (

Hz)

Fig.20 Noise vs. collector current

Ta=25

°C

V

CE

=5V

I

C

=100µA

R

S

=10kΩ