UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions (Units : mm) 2.00.2 UMT3904 0.90.1 1.30.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.70.1 (3) 2.10.1 (2) 1.250.1 (1) 0~0.1 0.3 +0.1 -0 0.1~0.4 !Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. 0.150.05 All terminals have same dimensions Packaging type UMT3 R1A Code Basic ordering unit (pieces) 2N3904 TO-92 - SMT3 R1A SST3 R1A T106 T116 T146 T93 3000 3000 3000 3000 0~0.1 0.2Min. (3) ROHM : SST3 +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions 2.90.2 MMST3904 0.80.1 (2) Unit 60 40 Emitter-base voltage Collector current VEBO IC 6 0.2 V V V A 0.2 W W 2N3904 4.80.2 3.70.2 (12.7Min.) UMT3904, SST3904, Collector MMST3904 power dissipation SST3904, MMST3904 All terminals have same dimensions PC 2N3904 Junction temperature Tj 0.35 0.625 150 Storage temperature Tstg -55~+150 0.15 0.5 + -0.05 * W ROHM : TO-92 EIAJ : SC-43 C C (1) (2) (3) 5 +0.3 2.5 - 0.1 0.450.1 2.3 * When mounted on a 7 x 5 x 0.6 mm ceramic board. !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 60 40 6 ICES - 50 V V V nA IEBO - - 50 nA - - 0.2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio hFE V - - 0.3 0.65 - 0.85 - - 0.95 40 70 100 - 300 - 4 MHz pF ~ V - Conditions IC = 10A IC = 1mA IE = 10A VCB = 30V VEB = 3V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA IC/IB = 50mA/5mA VCE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA Transition frequency Collector output capacitance Cob 60 30 300 - Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz td - - 35 ns tr tstg - - 35 200 ns ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA tf - - 50 ns Delay time Rise time Storage time Fall time (1) Emitter (2) Base (3) Collector 2.5Min. Limits VCBO VCEO +0.1 0.15 -0.06 0.4 +0.1 -0.05 4.80.2 Symbol Parameter (3) ROHM : SMT3 EIAJ : SC-59 Collector-base voltage Collector-emitter voltage 0~0.1 2.80.2 0.2 1.6 + -0.1 (1) !Absolute maximum ratings (Ta = 25C) (1) Emitter (2) Base (3) Collector 1.1 +0.2 -0.1 1.90.2 0.95 0.95 0.3~0.6 Marking SST3904 MMST3904 0.450.1 (2) (1) 0.2 1.3 + -0.1 UMT3904 0.95 +0.2 -0.1 1.90.2 0.95 0.95 2.40.2 Part No. 2.90.2 SST3904 !Package, marking and packaging specifications (1) Emitter (2) Base (3) Collector fT VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA VCE = 20V , IE = -10mA, f = 100MHz VCB = 10V , f = 100kHz VCC = 3V , IC = 10mA , IB1 = -IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = -IB2 = 1mA (1) Emitter (2) Base (3) Collector UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors COLLECTOR CURRENT : IC (mA) 10 40 Ta=25C 35 8 30 25 6 20 4 15 10 2 5.0 IB=0A 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves Fig.1 Grounded emitter output characteristics Ta=25C IC / IB=10 0.3 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.2 Collector-emitter saturation voltage vs. collector current 500 DC CURRENT GAIN : hFE Ta=25C VCE=1V 3V 5V 10V 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( ) 500 VCE=5V DC CURRENT GAIN : hFE Ta=125C Ta=25C 100 Ta=-55C 10 5 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 1000 UMT3904 / SST3904 / MMST3904 / 2N3904 500 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Transistors AC CURRENT GAIN : hFE Ta=25C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC (mA) 10 0.4 1.0 10 100 COLLECTOR CURRENT : IC (mA) 0 0.1 1000 40V 100 10 COLLECTOR CURRENT : IC (mA) 10 1.0 100 10 100 COLLECTOR CURRENT : IC (mA) Fig.9 Rise time vs. collector current Fig.8 Turn-on time vs. collector current 50 Ta=25C VCC=40V IC/IB=10 100 15V VCC=40V 100 15V 1000 Ta=25C IC / IB=10 RISE TIME : t r (ns) 40V 10 1.0 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.6 Base-emitter saturation voltage vs. collector current FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25C IC=10IB1=10IB2 0.4 VCC=3V Fig.7 Grounded emitter propagation characteristics 1000 0.8 Ta=25C IC / IB=10 100 0.8 1.2 Ta=25C f=1MHz CAPACITANCE (pF) 1.2 0 0.1 1000 TURN ON TIME : ton (ns) BASE EMITTER VOLTAGE : VBE(ON) (V) Ta=25C VCE=5V 1.6 1.6 100 Fig.5 AC current gain vs. collector current 1.8 Ta=25C IC / IB=10 1.8 10 Cib Cob VCE=3V 1 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 Fig.10 Storage time vs. collector current 10 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.11 Fall time vs. collector current 0.5 0.1 1.0 10 REVERSE BIAS VOLTAGE (V) 100 Fig.12 Input / output capacitance vs. voltage UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors 300 MHz 10 1.0 300MHz 200MHz 0.1 0.1 100MHz 1.0 10 100 COLLECTOR CURRENT : IC (mA) 10 100 10 1.0 Fig.14 Gain bandwidth product vs. collector current SOURCE RESISTANCE : RS () .0 0d dB B 10 3. 0d B 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) Ta=25C VCE=5V IC=100A RS=10k 8 6 4 2 B 0d 8. 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 Fig.19 Noise characteristics ( V ) 0 10 100 1k FREQUENCY : f (Hz) 10 Fig.18 Noise characteristics ( ) 10 NOISE FIGURE : NF (dB) =3 5. 0.1 1 COLLECTOR CURRENT : IC (mA) NF =1 .0 dB 1k B 0d B 5. 0d 8. NF dB B 0d dB 12 B 8d B 5d B 3d 1k Ta=25C VCE=5V f=1kHz 12 Ta=25C VCE=5V f=10Hz 10k B 100k Fig.17 Noise characteristics ( ) Fig.16 Noise characteristics ( ) 100k 0d Ta=25C IC=1mA hie=3.84k hfe=141 -5 hre=5.03 x 10 hoe=5.58S 1 10 100 COLLECTOR CURRENT : IC (mA) 0.1 0.1 B 100 0.01 25 50 75 100 125 150 ANBIENT TEMPERATURE : Ta (C) .0 3. 1 dB 12 NF =1 hre hfe B 8d B 5d B 3d B 0d 1. B 8. 0 B 0d 1k hie 0d 0.1n B hoe 10 10k 5d 1n 3d 1. VCE=5V f=270Hz Fig.15 h parameter vs. collector current Ta=25C VCE=5V f=10kHz 10k 10n 100 dB 12 B 8d 1 100n SOURCE RESISTANCE : RS () 10 COLLECTOR CURRENT : IC (mA) 100k VCB=25V 100 Ta=25C VCE=5V 5. COLLECTOR CUTOFF CURRENT : ICBO (A) Fig.13 Gain bandwidth product 1000 h PARAMETER NORMALIZED TO 1mA 400MHz 500MHz SOURCE RESISTANCE : RS () Ta=25C 100MHz 200MHz CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR-EMITTER VOLTAGE : VCE (V) 100 10k Fig.20 Noise vs. collector current 100k