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FEATURES
• Double Side Cooling
• High Surge Capability
APPLICATIONS
• High Power Drives
• High Voltage Power Supplies
• Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR1180F52
DCR1180F50
DCR1180F48
5200
5000
4800
Tvj = -40° C to 125° C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFOR MATION
When ordering, select the required part number
shown in the Voltag e Ratings selection table.
For example:
DCR1180F52
Note: Please use the complete part num ber when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
VDRM 5200V
IT(AV) 1180A
ITSM 15900A
dV/dt* 1500V/µs
dI/dt 300A/µs
* Higher dV/dt selections available
Outline type code: F
(See Package Details for further information)
Fig. 1 Package outline
DCR1180F52
Phase Control Thyristor
Preliminary Infor ma tion
DS5858-1.0 June 2005 (LN23750)
SEMICONDUCTOR
DCR1180F52
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CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
Double Side Cooled
IT(AV) Mean on-state current Half wave resistive load 1180 A
IT(RMS) RMS value -1854 A
ITContinuous (direct) on-state current -1812 A
SURGE RATINGS
Symbol
Parameter
Test Conditions Max. Units
ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 15.9 kA
I2t I2t for fusing VR = 0 1.26 MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions Min. Max. Units
Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0171 °C/W
Single side cooled Anode DC - 0.0313 °C/W
Cathode DC - 0.0378 °C/W
Rth(c-h) Thermal resistance – case to heatsink Clamping force 23kN Double side - 0.004 ° C/W
(with mounting co mpo und) Single side - 0.008 ° C/W
Tvj Virtual junction temperature On-state (conducting) -135 °C
Reverse (blocking) -125 °C
Tstg Storage temperat ure range -55 125 °C
FmClamping force 22.0 25.0 kN
SEMICONDUCTOR
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DYNAMIC CH ARACTERIS TICS
Symbol
Parameter
Test Conditions Min. Max. Units
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C -150 mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open -1500 V/µs
dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz -150 A/µs
Gate source 30V, 10Ω,Non-repetitive -300 A/µs
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level 100A to 800A at Tcase = 125° C - 0.9 V
Threshold volta ge – High level 800A to 3000A at Tcase = 125°C - 1.05 V
rTOn-state slope resistance – Low level 100A to 800A at Tcase = 125° C - 0.750 mΩ
On-state slope resistance – High level 800A to 3000A at Tcase = 125° C - 0.567 mΩ
tgd Delay time VD = 67% VDRM, gate sour ce 30V, 10ΩTBD TBD µs
tr = 0.5µs, Tj = 25°C
tqTurn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, 400 800 µs
dVDR/dt = 20V/µs linear
QSStored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, 1200 2750 µC
ILLatching current Tj = 25°C, VD = 5V TBD TBD mA
IHHolding current Tj = 25°C, RG-K = ∞, ITM = 500A, IT = 5A TBD TBD mA
SEMICONDUCTOR
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions Max. Units
VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V
VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V
IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA
IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA
CURVES
1000
2000
3000
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous on-state voltage V
T
- (V)
Instantaneous on-state current IT - (A)
25° C min
25° C max
125° C min
125° C max
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION Where A = 0.102312
B = 0.174461
VTM = A + Bln (IT) + C.IT+D.√ITC = 0.00 0567
D = -0.008061
these values are valid for Tj = 125° C for IT 100A to 3000A
SEMICONDUCTOR
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0
2
4
6
8
10
12
14
16
0
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (kW)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
Maximum case temperature, T case ( oC )
180
120
90
60
30
Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permis sible case temperature,
double side cooled – sine wav e
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
Maximum heatsink temperature, T Heatsink - ( oC )
180
120
90
60
30
0
2
4
6
8
10
12
14
16
0
1000
2000
3000
4000
5000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (kW)
d.c.
180
120
90
60
30
Fig.5 Maximum permis sible heatsink temperature,
double side cooled – sine wav e Fig.6 On-state power dissipation – rectangular wave
SEMICONDUCTOR
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0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
2500
3000
Mean on-state current, I
T(AV)
- (A)
Maximum permissible case temperature , Tcase - (°C)
d.c.
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
500
1000
1500
2000
2500
Mean on-state current, I
T(AV
) - (A)
Maximum heatsik temperature Theatsink - (oC)
d.c.
180
120
90
60
30
Fig.7 Maximum permis sible case temperature,
double side cooled – rectangular wave Fig.8 Maximum permis sible heatsink temperature,
double side cooled – rectangular wave
0
5
10
15
20
25
30
35
40
0.001
0.01
0.1
1
10
100
Time ( s )
Thermal impedance Zth(j-c) ( °C/kW )
Double Side Cooled
Anode Cooled
Cathode Cooled
1
2
3
4
Double side cooled
R
i
(° C/kW)
2.0345
4.8026
8.8692
1.3748
T
i
(s)
0.0072774
0.0546296
0.4673207
1.5324
Anode side cooled
R
i
(° C/kW)
2.0227
4.5436
6.0443
18.6113
T
i
(s)
0.0072364
0.0524941
0.320548
5.0367
Cathode side cooled
R
i
(° C/kW)
2.104
5.1949
4.0364
27.3362
T
i
(s)
0.007431
0.0594595
0.3929454
4.2034
Z
th
=
Σ
[R
i
x ( 1-exp. (t/t
i
))]
[1]
∆
R
th(j-c)
Conduction
Tables show the increm en t s of thermal resistance R
th(j-c)
when the devic e
operates at condu ction angles other than d.c.
Double side cooling
Anode Side Cooling
Cathode Sided Cooling
∆
Z
th
(z)
∆
Z
th
(z)
∆
Z
th
(z)
θ
°
sine.
rect.
θ
°
sine.
rect.
θ
°
sine.
rect.
180
3.22
2.12
180
3.23
2.12
180
3.22
2.12
120
3.79
3.12
120
3.80
3.13
120
3.79
3.12
90
4.43
3.71
90
4.44
3.72
90
4.42
3.71
60
5.02
4.36
60
5.04
4.38
60
5.02
4.36
30
5.50
5.10
30
5.52
5.12
30
5.49
5.10
15
5.72
5.51
15
5.74
5.53
15
5.71
5.50
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
SEMICONDUCTOR
DCR1180F52
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6
8
10
12
14
16
1
10
100
Number of cycles
Surge current, ITSM- (kA)
Conditions:
Tcase = 125° C
V
R
=0
Pulse width = 10ms
0
10
20
30
40
1
10
100
Pulse width, t
P
- (ms)
Surge current, ITSM - (kA)
0
1
2
3
4
I2t (MA2s)
I
2
t
I
TSM
Conditions:
T
case
= 125° C
V
R
= 0
half-sine wave
Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current
SEMICONDUCTOR
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
IF IN DOUBT ASK
DO NOT SCALE
FOR PACKAGE HEIGHT
SEE TABLE
GATE
ANODE
CATHODE
Ø1.5
Ø47.0 NOM
Ø47.0 NOM
Ø73.0 MAX
ELECTRODES)
DEEP (IN BOTH
HOLE Ø3.60 X 2.00
20° OFFSET (NOM.)
TO GATE TUBE
Device
Maximum
Thickness
(mm)
Minimum
Thickness
(mm)
DCR1003SF18
26.415
25.865
DCR1006SF28
26.49
25.94
DCR1008SF36
26.72
26.17
DCR1050SF42
26.72
26.17
DCR840F48
26.84
26.29
DCR1020F65
27.1
26.55
DCR1274SF18
26.415
25.865
DCR1275SF28
26.49
25.94
DCR1277SF36
26.72
26.17
DCR1279SF48
26.84
26.29
DCR1XXXF22
26.415
25.865
DCR1640F28
26.49
25.94
DCR1350F42
26.72
26.17
DCR1180F52
26.84
26.29
DCR950F65
27.1
26.5
DCR810F85
27.46
26.91
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
Fig.15 Package outline
SEMICONDUCTOR
DCR1180F52
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new uni ts to satisfy the g rowing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded alumin i um heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may in c lude potentially hazardous rupture of the package. Appropriate safety precaut ions should always be
followed. http://www.dynexsemi.com
e-mail: p o wer_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex S emiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in wri ting) may not be used, applied or r eproduced for any purpose nor form part of any order or
contract nor to be regarded as a repr es entation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any p roduct or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such inf ormati on and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may resul t in significant injury or death to the user. All products and materials are sol d and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade nam es of their respective owners.