DATA SH EET
Product data sheet
Supersedes data of 1999 May 26 2003 Mar 20
DISCRETE SEMICONDUCTORS
BAS19; BAS20; BAS21
General purpose diodes
db
ook, halfpage
M3D088
2003 Mar 20 2
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
FEATURES
•Small plastic SMD package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage: max. 100 V; 150 V; 200 V
•Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
•Repetitive peak forward current: max. 625 mA.
APPLICATIONS
•General purpose s witc hing in e.g. surface mounte d
circuits.
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE (1)
BAS19 JP∗
BAS20 JR∗
BAS21 JS∗
PIN DESCRIPTION
1anode
2not connected
3cathode
handbook, halfpage
21
3MAM185
2
n.c. 1
3
Fig.1 Simplified outline (SOT23 ) and symbo l .
2003 Mar 20 3
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAS19 −120 V
BAS20 −200 V
BAS21 −250 V
VRcontinuous revers e voltage
BAS19 −100 V
BAS20 −150 V
BAS21 −200 V
IFcontinuous forward current see Fig.2; note 1 −200 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs−9 A
t = 100 µs−3 A
t = 10 ms −1.7 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2003 Mar 20 4
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF = 100 mA 1 V
IF = 200 mA 1.25 V
IRreverse current see Fig.5
BAS19 VR = 100 V 100 nA
VR = 100 V; Tj = 150 °C100 µA
BAS20 VR = 150 V 100 nA
VR = 150 V; Tj = 150 °C100 µA
BAS21 VR = 200 V 100 nA
VR = 200 V; Tj = 150 °C100 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 5pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Mar 20 5
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuou s forward
current as a func tion of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG442
Tamb (oC)
IF
(mA)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1VF (V)
(1) (3)(2)
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2003 Mar 20 6
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
Fig.5 Reverse current as a function of junc tion
temperature.
handbook, halfpage
10
2
10
200
0
MBG381
100 Tj (
o
C)
IR
(µA)
1
10
2
10
1
(1) (2)
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage