DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS19; BAS20; BAS21 General purpose diodes Product data sheet Supersedes data of 1999 May 26 2003 Mar 20 NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 FEATURES PINNING * Small plastic SMD package PIN * Switching speed: max. 50 ns 1 anode * General application 2 not connected * Continuous reverse voltage: max. 100 V; 150 V; 200 V 3 cathode DESCRIPTION * Repetitive peak reverse voltage: max. 120 V; 200 V; 250 V * Repetitive peak forward current: max. 625 mA. APPLICATIONS * General purpose switching in e.g. surface mounted circuits. handbook, halfpage 2 1 2 n.c. DESCRIPTION The BAS19, BAS20 and BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. 1 3 3 MAM185 MARKING TYPE NUMBER MARKING CODE (1) BAS19 JP BAS20 JR BAS21 JS Fig.1 Simplified outline (SOT23) and symbol. Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. 2003 Mar 20 2 NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BAS19 - 120 V BAS20 - 200 V BAS21 - 250 V BAS19 - 100 V BAS20 - 150 V BAS21 - 200 V - 200 mA - 625 mA t = 1 s - 9 A t = 100 s - 3 A t = 10 ms - 1.7 A - 250 mW continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current see Fig.2; note 1 square wave; Tj = 25 C prior to surge; see Fig.4 Tamb = 25 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 3 NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BAS19 BAS20 BAS21 CONDITIONS MAX. UNIT see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V VR = 100 V 100 nA VR = 100 V; Tj = 150 C 100 A VR = 150 V 100 nA VR = 150 V; Tj = 150 C 100 A VR = 200 V 100 nA VR = 200 V; Tj = 150 C see Fig.5 100 A Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.8 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 4 VALUE UNIT 330 K/W 500 K/W NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 GRAPHICAL DATA MBG442 300 MBG384 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 (1) 0 0 0 100 Tamb (oC) 200 1 (3) 2 VF (V) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Mar 20 5 104 NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 MBG381 2 10halfpage handbook, handbook, halfpage IR (A) 10 (1) 1 10 (2) 1 10 2 100 0 Tj (oC) 200 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 Mar 20 6 Diode capacitance as a function of reverse voltage; typical values.