2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) hFE A 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 C fT VCE=12V, IE=-0.3A 15typ MHz -55 to +150 C COB VCB=10V, f=1MHz 50typ pF Tstg 3.9 V 0.1 100mA 1 I B =50mA 1 2 3 0.7max V C E (sat) -55C (Case Temp) 25C (Case Temp) 125C (Case Temp) V B E (sat) 1 p) -55C (Case Tem p) 25C (Case Tem Temp) 125C (Case 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 0 7 5 10 5 0.5 1 3 t s tg V C C 250V I C :I B1 :-I B 2 =10:1.5:5 Transient Thermal Resistance t o n* t s t g* t f ( s) -55C Sw it ching Time DC C urrent G ain h FE 25C 0.1 1 tf 0.5 t on 0.1 0.1 0.5 10 5 5 1 2 10 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 30 20 nk Collecto r Cur rent I C (A) P c - T a Derating si 1000 1000 at 500 100 he Collector Curr ent I C (A) 1 ite 100 Collector-Emitter Voltage V C E (V) 100 0.3 fin 50 0.5 In s ) 0.01 0.005 50 10 1 ith s C 0.1 0.01 1.2 W 0 1 0.005 2 1.0 4 Ma xim um Powe r Dissipat io n P C (W) 10 s 5 ms =2 10 ( Tc Without Heatsink Natural Cooling 0.8 35 0.5 0.05 0.6 Time t(ms) 50 1m DC 0.1 0.05 5 0.4 j-a - t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 1 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 0 Base-Emittor Voltage V B E (V) t on *t stg * t f - I C Characteristics (Typical) 125C 0.05 1 3 (V C E =4V) 2 0.01 2 Collector Current I C (A) h FE - I C Characteristics (Typical) 50 (V C E =4V) 3 2 0 0.01 4 I C - V BE Temperature Characteristics (Typical) (I C /I B =5) mp) 200m A 0 4.0max 0.7max e Te Collector Current I C (A) 300m A 2 2.40.2 Weight : Approx 2.0g a. Type No. b. Lot No. B C E Cas Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 700mA 500 mA 0 -0.35 tf (s) V CE (sat),V BE (sat) - I C Temperature Characteristics (Typical) I C - V CE Characteristics (Typical) 3 tstg (s) ton (s) C ( -5 10 IB2 (A) 125 0.7 357 IB1 (A) Collector Current I C (A) 250 VBB2 (V) VBB1 (V) 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 j - a ( C/W) IC (A) RL () 1.350.15 2.54 Typical Switching Characteristics (Common Emitter) VCC (V) o3.30.2 a b p) A 100max e Tem 3(Pulse6) IC VEB=7V IC=10mA (Cas V(BR)CEO 4.20.2 2.8 c0.5 4.00.2 IEBO V 10.10.2 0.80.2 V 7 A 0.2 800 VEBO 100max mp) VCEO VCB=800V -55C ICBO Unit e Te V 2SC4304 (Cas 900 External Dimensions FM20(TO220F) (Ta=25C) Conditions 25C VCBO Symbol 16.90.3 Unit 8.40.2 Electrical Characteristics 2SC4304 Symbol 13.0min Absolute maximum ratings (Ta=25C) Application : Switching Regulator and General Purpose 10 Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(C) 150