TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown. High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic level interfaces - ideal for TTL and CMOS Solid state relays Analog switches Power management Telecom switches Ordering Information Device Package Options TO-236AB (SOT-23) TO-92 TP2104K1-G TP2104N3-G TP2104 -G indicates package is RoHS compliant (`Green') RDS(ON) VGS(th) (V) (max) () (max) (V) -40 6.0 -2.0 BVDSS/BVDGS Pin Configuration DRAIN DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55C to +150C +300C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. SOURCE TO-92 (N3) GATE GATE TO-236AB (SOT-23) (K1) Product Marking SiTP 2 1 0 4 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) P1LW W = Code for week sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-236AB (SOT-23) (K1) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TP2104 Thermal Characteristics ID ID Power Dissipation ja IDR IDRM O O C/W (mA) (A) 0.36 200 350 -160 -0.8 0.74 125 170 -250 -1.0 Package (continuous) (pulsed) (A) @ TA = 25OC (W) TO-236AB (SOT-23) -160 -0.8 TO-92 -250 -1.0 (mA) jc C/W ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -40 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.0 - -2.0 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA IGSS Gate body leakage - -1.0 -100 nA VGS = 20V, VDS = 0V - -10 A IDSS Zero gate voltage drain current - VGS = 0V, VDS = Max Rating - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current - - A VGS = -10V, VDS = -25V - 10 - 6.0 1.0 %/ C VGS = -10V, ID = -500mA mmho VDS = -25V, ID = -500mA VGS(th) RDS(ON) RDS(ON) -0.6 Static drain-to-source on-state resistance - Change in RDS(ON) with temperature - 0.55 GFS Forward transconductance 150 200 - CISS Input capacitance - 35 60 COSS Common source output capacitance - 22 30 CRSS Reverse transfer capacitance - 8.0 10 td(ON) Turn-on delay time - 4.0 6.0 Rise time - 4.0 8.0 Turn-off delay time - 5.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - -1.2 Reverse recovery time - 400 tr td(OFF) tf VSD trr O Conditions VGS = -4.5V, ID = -50mA VGS = -10V, ID = -500mA pF VGS = 0V, VDS = -25V, f = 1.0 MHz ns VDD = -25V, ID = -500mA, RGEN = 25 -2.0 V VGS = 0V, ISD = -500mA - ns VGS = 0V, ISD = -500mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULSE GENERATOR 10% INPUT -10V td(ON) RGEN 90% t(OFF) t(ON) td(OFF) tr D.U.T. tF 0V 90% OUTPUT VDD Output INPUT 10% 90% RL 10% VDD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 TP2104 Typical Performance Curves Output Characteristics Saturation Characteristics -2.0 -2.0 VGS = -10V -1.2 -1.6 ID (amperes) ID (amperes) -1.6 -8V -0.8 -6V -1.2 VGS = -10V -8V -0.8 -6V -0.4 -0.4 -4V -4V -3V -3V 0 0 0 -10 -20 -30 -40 VDS (volts) 0 -50 -2 -6 -8 -10 Power Dissipation vs. Temperature Transconductance vs. Drain Current 1.0 0.5 VDS = -25V 0.4 0.8 TA = -55C 0.3 PD (watts) GFS (siemens) -4 VDS (volts) 25C 0.2 TO-92 0.6 SOT-23 0.4 125C 0.1 0.2 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 25 75 50 ID (amperes) 125 100 150 TA (C) Thermal Response Characteristics Maximum Rated Safe Operating Area -1.0 1.0 Thermal Resistance (normalized) SOT-23 (pulsed) ID (amperes) SOT-23 (DC) -0.1 -0.01 -0.001 -0.1 TA = 25C -1.0 -10 VDS (volts) -100 0.8 SOT-23 0.6 TA = 25C PD = 0.36W 0.4 0.2 0 0.001 TO-92 P D = 1W T C = 25C 0.01 0.1 1.0 10 tp (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 TP2104 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 20 1.1 VGS = -4.5V RDS(ON) (ohms) BVDSS (normalized) 16 1.0 12 VGS = -10V 8 4 0.9 0 -50 0 50 100 150 0 -0.4 -0.8 Transfer Characteristics -1.6 -2.0 VGS(th) and R DS(ON) Variation with Temperature -2.0 1.2 -1.6 1.1 VGS(th) (normalized) TA = -55C -1.2 125C -0.8 25C -0.4 1.6 RDS(ON) @ -10V, -0.5A 1.4 1.0 VGS(th) @ -1mA 1.2 0.9 1.0 0.8 0.8 0 0.7 0 -2 -4 -6 -8 -50 -10 50 0 VGS (volts) 100 150 Tj ( C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1MHz VDS = -10V -8 VGS (volts) C (picofarads) 75 50 CISS 25 -6 -4 VDS = -40V 125 pF COSS -2 CRSS 35 pF 0 0 0 -10 -20 -30 VDS (volts) -40 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) VDS = -25V ID (amperes) -1.2 ID (amperes) Tj ( C) TP2104 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch View B Top View View B View A - A Side View Symbol Dimension (mm) A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e 0.95 BSC e1 1.90 BSC L 0.20 L1 0.50 0.60 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5 0O 8O TP2104 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014 .014 .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022 .022 .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. (c)2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TP2104 A022309 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 6