DATA SH EET
Product data sheet
Supersedes data of 1999 May 26 2003 Mar 20
DISCRETE SEMICONDUCTORS
BAS19; BAS20; BAS21
General purpose diodes
db
ook, halfpage
M3D088
2003 Mar 20 2
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
FEATURES
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 100 V; 150 V; 200 V
Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
General purpose s witc hing in e.g. surface mounte d
circuits.
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
MARKING
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
PINNING
TYPE NUMBER MARKING CODE (1)
BAS19 JP
BAS20 JR
BAS21 JS
PIN DESCRIPTION
1anode
2not connected
3cathode
handbook, halfpage
21
3MAM185
2
n.c. 1
3
Fig.1 Simplified outline (SOT23 ) and symbo l .
2003 Mar 20 3
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAS19 120 V
BAS20 200 V
BAS21 250 V
VRcontinuous revers e voltage
BAS19 100 V
BAS20 150 V
BAS21 200 V
IFcontinuous forward current see Fig.2; note 1 200 mA
IFRM repetitive peak forward current 625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs9 A
t = 100 µs3 A
t = 10 ms 1.7 A
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
2003 Mar 20 4
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF = 100 mA 1 V
IF = 200 mA 1.25 V
IRreverse current see Fig.5
BAS19 VR = 100 V 100 nA
VR = 100 V; Tj = 150 °C100 µA
BAS20 VR = 150 V 100 nA
VR = 150 V; Tj = 150 °C100 µA
BAS21 VR = 200 V 100 nA
VR = 200 V; Tj = 150 °C100 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 5pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ; measured at
IR = 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2003 Mar 20 5
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuou s forward
current as a func tion of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG442
Tamb (oC)
IF
(mA)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1VF (V)
(1) (3)(2)
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2003 Mar 20 6
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
Fig.5 Reverse current as a function of junc tion
temperature.
handbook, halfpage
10
2
10
200
0
MBG381
100 Tj (
o
C)
IR
(µA)
1
10
2
10
1
(1) (2)
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
04862
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7 Maximum permissible continuous reverse
voltage as a functio n of the ambient
temperature.
(1) BAS21.
(2) BAS20.
(3) BAS19.
handbook, halfpage
0 100 200
300
200
0
100
MBG445
Tamb (oC)
VR
(V)
(1)
(2)
(3)
2003 Mar 20 7
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 3 mA.
Fig.8 Reverse reco very voltage test circuit and waveforms.
2003 Mar 20 8
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Mar 20 9
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this do cument may have ch anged since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/04/pp10 Date of release: 2003 Mar 20 Document order number: 9397 750 10961