2SC4050
Silicon NPN Epitaxial
ADE-208-1095 (Z)
1st. Edition
Mar. 2001
Application
Low frequency amplifier, switching
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC4050
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 120 V
Emitter to base voltage VEBO 5V
Collector current IC100 mA
Collector power dissipation PC150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 120 V IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 120 V IC = 1 mA, RBE =
Emitter to base breakdown
voltage V(BR)EBO 5 ——V I
E
= 10 µA, IC = 0
Collector cutoff current ICBO 0.1 µAV
CB = 70 V, IE = 0
Emitter cutoff current IEBO 0.1 µAV
EB = 2 V, IC = 0
DC current transfer ratio hFE*1250 800 VCE = 12 V, IC = 2 mA*2
Collector to emitter saturation
voltage VCE(sat) 0.1 V IC = 10 mA, IB = 1 mA*2
Base to emitter saturation
voltage VBE(sat) 1.1 V IC = 10 mA, IB = 1 mA*2
Notes: 1. The 2SC4050 is grouped by hFE as follows.
2. Pluse test
Grade D E
Mark KID KIE
hFE 250 to 500 400 to 800
2SC4050
3
15010050
Ambient Temperature Ta (°C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
4 8 12 16 20
Collector to Emitter Voltage VCE (V)
0
10
8
6
4
2
Typical Output Characteristics
Collector Current IC (mA)
18
16
14
12
10
8
6
4
2 µA
IB = 0
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
100
10
1.0
0.1
Typical Transfer Characteristics
Collector Current IC (mA)
VCE = 6 V
Ta = 75°C
25
–25
1103 30 100
Collector Current IC (mA)
1,000
300
100
30
10
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio hFE
Ta = 75°C
VCE = 12 V
Pulse
–25 25
2SC4050
4
110330 100
Collector Current IC (mA)
1.0
0.3
0.1
0.03
0.01
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Pulse
IC = 10 IB
Ta = 75°C
25
–25
0.5 502105201.0
Collector Current IC (mA)
1,000
500
100
50
20
200
10
Gain Bandwidth Product vs. Collector
Current
Gain Bandwidth Product fT (MHz)
VCE = 6 V
Pulse
33010 100
Collector to Base Voltage VCB (V)
100
30
10
3
0
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
IE = 0
f = 1 MHz
2SC4050
5
Package Dimensions
0.16
0 – 0.1
+ 0.10
– 0.06
0.4+ 0.10
– 0.05
0.95 0.95
1.9 ± 0.2
2.95 ± 0.2
2.8 + 0.2
– 0.6
0.65
1.5 ± 0.15
0.65
1.1+ 0.2
– 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
MPAK
Conforms
0.011 g
As of January, 2001
Unit: mm
2SC4050
6
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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