MPSH81 / MMBTH81
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81MPSH81
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Co llector-Emitter Vol t age 20 V
VCBO Collector-Base Voltage 20 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current - Continuous 50 mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Ra nge -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH81 *MMBTH81
PDTotal Device Di ssipation
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
CEBTO-92
C
B
E
SOT-23
Mark: 3D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation H81, Rev B
MPSH81 / MMBTH81
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
(
BR
)
CEO Co llector-Emitte r Brea kdown Voltag e* IC = 1.0 mA, IB = 0 20 V
V
(
BR
)
CBO Co llector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 20 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltag e IE = 10
µ
A, IC = 0 3.0 V
ICBO Collecto r Cutoff Current VCB = 10 V, IE = 0 100 nA
IEBO Emitter Cutoff Curren t VEB = 2.0 V, IC = 0 100 nA
hFE DC Current Gain IC = 5.0 mA, VCE = 10 V 60
VCE(sat)Collector-Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 0.5 V
VBE(on)Base-Em i tter On Voltage IC = 5.0 mA, VCE = 10 V 0.9 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
f = 100 MHz 600 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF
Cce Collecto r Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DC Typical Characteristics
Collector Saturation Voltage
vs. Collector Current
DC Current Gain vs.
Collector Current
Symbol Parameter Test Conditions Min Max Units
PNP RF Transistor
(continued)
MPSH81 / MMBTH81
DC Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs. Collector Current Base-Emitter ON Voltage
vs. Collector Current
Collector Reverse Current
vs. Ambient Temperature
PNP RF Transistor
(continued)
MPSH81 / MMBTH81
AC Typical Characteristics
Contours of Constant Gain
Bandwidth Product (fT)
Input / Output Capacitance
vs. Reverse Bias Voltage
POWER DISSIPATION vs
AMBIENT TEMPERATURE
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATI ON (m W)
TO-92
SOT-23
D
°°
°°
°
PNP RF Transistor
(continued)
