IPP114N12N3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratin
g
s
,
at
T
j
=2
5
°
C,
unless otherwise s
p
ecified
V
DS
120 V
R
DS(on)max
11.4 m
I
D
75
A
Product Summar
y
Type IPP114N12N3 G
Package PG-TO220-3
Marking 114N12N
Rev. 2.4 page 1 2011-11-25
Maximum
ratings
,
at
T
j
25
C
,
unless
otherwise
specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 75 A
TC=100 °C 53
Pulsed drain current2) ID,pulse TC=25 °C 300
Avalanche energy, single pulse EAS ID=75 A, RGS=25 Ω120 mJ
Gate source voltage3) VGS ±20 V
Power dissipation Ptot TC=25 °C 136 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
3
Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
1)J-STD20 and JESD22
2) see figure 3
Rev. 2.4 page 1 2011-11-25
IPP114N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.1 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area4) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 120 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=83 µA 234
Zero gate voltage drain current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=100 V, VGS=0 V,
Tj=125 °C - 10 100
Values
Thermal resistance, junction -
ambient
Rev. 2.4 page 2 2011-11-25
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=75 A - 9.8 11.4
Gate resistance RG- 1.5 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=75 A 40 80 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4 page 2 2011-11-25
IPP114N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 3240 4310 pF
Output capacitance Coss - 408 543
Reverse transfer capacitance Crss -22-
Turn-on delay time td(on) -19-ns
Rise time tr-36-
Turn-off delay time td(off) -30-
Fall time tf-7-
Gate Char
g
e Characteristics5)
Gate to source charge Qgs -18-nC
Gate to drain charge Qgd -12-
Switching charge Qsw -20-
Gate charge total Qg-4965
Values
VGS=0 V, VDS=60 V,
f=1 MHz
VDD=60 V, VGS=10 V,
ID=37 A, RG=1.6 Ω
VDD=60 V, ID=75 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2011-11-25
g
g
Gate plateau voltage Vplateau - 5.6 - V
Output charge Qoss VDD=60 V, VGS=0 V -5675nC
Reverse Diode
Diode continous forward current IS- - 75 A
Diode pulse current IS,pulse - - 300
Diode forward voltage VSD VGS=0 V, IF=75 A,
Tj=25 °C - 1 1.2 V
Reverse recovery time trr - 116 ns
Reverse recovery charge Qrr - 232 nC
5) See figure 16 for gate charge parameter definition
VR=60 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Rev. 2.4 page 3 2011-11-25
IPP114N12N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
0
20
40
60
80
100
120
140
0 50 100 150 200
Ptot [W]
TC[°C]
0
10
20
30
40
50
60
70
80
0 50 100 150 200
ID[A]
TC[°C]
Rev. 2.4 page 4 2011-11-25
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
0
20
40
60
80
100
120
140
0 50 100 150 200
Ptot [W]
TC[°C]
0
10
20
30
40
50
60
70
80
0 50 100 150 200
ID[A]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102103
10-1
100
101
102
103
ID[A]
VDS [V]
Rev. 2.4 page 4 2011-11-25
IPP114N12N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
4.5 V 5 V
5.5 V
6 V
10 V
0
5
10
15
20
25
30
020406080
RDS(on) [mΩ]
ID[A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
50
100
150
200
250
012345
ID[A]
VDS [V]
Rev. 2.4 page 5 2011-11-25
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V 5 V
5.5 V
6 V
10 V
0
5
10
15
20
25
30
020406080
RDS(on) [mΩ]
ID[A]
25 °C
175 °C
0
50
100
150
200
250
02468
ID[A]
VGS [V]
0
20
40
60
80
100
020406080
gfs [S]
ID[A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
50
100
150
200
250
012345
ID[A]
VDS [V]
Rev. 2.4 page 5 2011-11-25
IPP114N12N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=75 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
typ
98 %
0
5
10
15
20
25
30
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
83 µA
830 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Rev. 2.4 page 6 2011-11-25
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
30
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
83 µA
830 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
105
0 20406080
C[pF]
VDS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.4 page 6 2011-11-25
IPP114N12N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=75 A pulsed
parameter: Tj(start) parameter: VDD
24 V
60 V
96 V
0
2
4
6
8
10
0 1020304050
VGS [V]
Qgate [nC]
25 °C
100 °C
150 °C
100101102103
100
101
102
IAS [A]
tAV [µs]
Rev. 2.4 page 7 2011-11-25
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
24 V
60 V
96 V
0
2
4
6
8
10
0 1020304050
VGS [V]
Qgate [nC]
105
110
115
120
125
130
135
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
100101102103
100
101
102
IAS [A]
tAV [µs]
Rev. 2.4 page 7 2011-11-25
IPP114N12N3 G
PG-TO220-3: Outline
Rev. 2.4 page 8 2011-11-25Rev. 2.4 page 8 2011-11-25
IPP114N12N3 G
Published by
Rev. 2.4 page 9 2011-11-25
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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Rev. 2.4 page 9 2011-11-25