Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 1 1Publication Order Number:
2N5401/D
2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol 2N5400 2N5401 Unit
CollectorEmitter Voltage VCEO 120 150 Vdc
Collector − Base Voltage VCBO 130 160 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC600 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient RJA 200 °C/W
Thermal Resistance,
Junction−to−Case RJC 83.3 °C/W
2N54xx
Y = Year
WW = W ork Week
YWW
MARKING DIAGRAM
TO−92
CASE 29
STYLE 1
123
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
COLLECTOR
3
2
BASE
1
EMITTER
2N5401
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0 ) 2N5400
2N5401
V(BR)CEO 150 Vdc
CollectorBase Breakdown Voltage
(IC = 100 Adc, IE = 0) 2N5400
2N5401
V(BR)CBO 160 Vdc
EmitterBase Breakdown Voltage
(IE = 10 Adc, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0) 2N5401
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5401
ICBO
50
50
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE 50
60
50
240
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
1.0
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 300 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 6.0 pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 200
Noise Figure
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF 8.0 dB
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
2N5401 TO−92 5000 Unit / Bulk
2N5401RL1 TO−92 2000 Tape & Reel
2N5401RLRA TO−92 2000 Tape & Reel
2N5401RLRAG TO−92
(Pb−Free) 2000 Tape & Reel
2N5401RLRM TO−92 2000 Tape & Ammo Box
2N5401ZL1 TO−92 2000 Tape & Ammo Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
2N5401
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3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20
1.0 5.0
FE
TJ = 125°C
25°C
−55°C
70
50
20 30 50 100
VCE = − 1.0 V
VCE = − 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
VBE, BASE−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)µIC
103
0.10.3 0.2
102
101
100
10−1
10−2
10−3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125°C
75°C
25°C
REVERSE FORWARD
2N5401
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4
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VCE(sat) @ IC/IB = 10
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
C, CAPACITANCE (pF)
100
TJ = 25°C
Cibo
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
0.3 3.0 30
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
Figure 7. Capacitances
10.2 V
Vin
10 s
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25 F
Vin 100 1N914
Vout
RC
VCC
−30 V
3.0 k
tr, tf 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
TJ = −55°C to 135°C
VC for VCE(sat)
VB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25°C
2N5401
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5
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
TO−92
CASE 29−11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
2N5401
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6
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2N5401/D
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