MJD340T4G - ON SEMICONDUCTOR - Datasheet.Company

June, 2016 − Rev. 12 1Publication Order Number:

MJD340/D

MJD340(NPN),

MJD350(PNP)

High Voltage Power

Transistors

DPAK for Surface Mount Applications

Designed for line operated audio output amplifier, switchmode

power supply drivers and other switching applications.

Features

•Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

•Electrically Similar to Popular MJE340 and MJE350

•Epoxy Meets UL 94 V−0 @ 0.125 in

•NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 300 Vdc

Collector−Base Voltage VCB 300 Vdc

Emitter−Base Voltage VEB 3 Vdc

Collector Current − Continuous IC0.5 Adc

Collector Current − Peak ICM 0.75 Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD15

0.12 W

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD1.56

0.012 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +150 °C

ESD − Human Body Model MJD340 (NPN)

MJD350 (PNP)

HBM 3B

ESD − Machine Model MJD340 (NPN)

MJD350 (PNP)

MM M4

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

0.5 AMPERE

300 VOLTS, 15 WATTS

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

J3x0 = Device Code

x= 4 or 5

G = Pb−Free Package

AYWW

J3x0G

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

www.onsemi.com

123

BASE

EMITTER

COLLECTOR

2, 4

BASE

EMITTER

COLLECTOR

2, 4

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W

Leading Temperature for Soldering Purpose TL260 °C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 1 mA, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

300

ÎÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 300 V, IE = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎÎÎ

−

ÎÎÎÎÎ

0.1

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 3 V, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

−

ÎÎÎÎÎ

0.1

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 50 mA, VCE = 10 V)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎ

240

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 100 mA, IB = 10 mA)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

−

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 1 A, VCE = 10 V)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎ

−

ÎÎÎÎÎ

1.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product

(IC = 50 mA, VCE = 10 V, f = 10 MHz)

ÎÎÎÎÎ

−

ÎÎÎÎ

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

300

10 1

100

3 20 30 50 70 100 200 300 500

200

25107

hFE, DC CURRENT GAIN

TJ = 150°C

+25°C

VCE = 2 V

VCE = 10 V

-55°C

+100°C

MJD340

V, VOLTAGE (VOLTS)

Figure 2. “On” Voltages

IC, COLLECTOR CURRENT (mA)

020 30 50 100 200 500

0.4

0.8

0.6

0.2

300

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

IC/IB = 5

MJD340

07 10 20 30 100 200

0.8

0.6

50 70 300 500

0.4

0.2

200

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

7 10 20 30 100 200

Figure 4. “On” Voltages

IC, COLLECTOR CURRENT (mA)

100

V, VOLTAGE (VOLTS)

50 70

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

TJ = 150°C

25°C

VCE = 2 V

VCC = 10 V

-55°C

300 500

hFE, DC CURRENT GAIN

30 IC/IB = 10

IC/IB = 5

VCE(sat)

MJD350 MJD350

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

t, TIME (ms)

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 1 k500

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

Figure 5. Thermal Response

RESISTANCE (NORMALIZED)

0.03 0.3 3 30 300

0.01

IC, COLLECTOR CURRENT (mA)

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

120 30 50 70 100

200

500

300 500 ms

Figure 6. Active Region Safe Operating Area

200 300 500 700 100

100

1 ms

100 msThere are two limitations on the power handling ability o f

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150_C. TJ(pk) may be calculated from the data in

Figure 5. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

Figure 7. Power Derating

T, TEMPERATURE (°C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

ORDERING INFORMATION

Device Package Shipping†

MJD340G DPAK

(Pb−Free) 75 Units / Rail

MJD340RLG DPAK

(Pb−Free) 1,800 / Tape & Reel

MJD340T4G DPAK

(Pb−Free) 2,500 / Tape & Reel

NJVMJD340T4G DPAK

(Pb−Free) 2,500 / Tape & Reel

MJD350G DPAK

(Pb−Free) 75 Units / Rail

MJD350T4G DPAK

(Pb−Free) 2,500 / Tape & Reel

NJVMJD350T4G DPAK

(Pb−Free) 2,500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD340 (NPN), MJD350 (PNP)

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

L4b2

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

DET AIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

eBOTTOM VIEW

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

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Phone: 81−3−5817−1050

MJD340/D

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