THRU
10 Am p
Schott ky Barrier
Rectifier
Features
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MCC 


 !"#
$%  !"#
 INCHES MM
     
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92

PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
132
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
www. mccsemi.com
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
80-100 Volts
TJ = 125°C
Peak Forward Surge
Current IFSM 120A 8.3ms, half sine
15mA
0.2mA TJ = 25°C
VF .85V
.75V
MBR10100CT MBR10100CT 100V 70V 100V
MBR1080CT MBR1080CT 80V 56V 80V
MBR1080CT
MBR10100CT
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 10A TC = 100°C
TJ =
125°C
IFM = 5A
TJ =
25°C
Typical Junction
Capacitance
300pF
CJ Measured at
1.0MHz, VR=4.0V
IR
RATING AND CHARA CTERISTIC CURVES
MBR1080CT thru MBR 10100CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
120
140
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERE S
25
75 100 125 150
4
050
16
175
PERCENT OF RATED PEAK RE VERSE VOLTA GE ,(%)
FIG.3 - TYPICAL REVERSE CHARACT ERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0.001
0.1
1.0
100
10
60 80 100
0.01 TJ= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
12
0
8
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARA CT ERISTI CS
INSTANTANEOUS FO RWARD CU RRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FO RWARD CU RRENT ,(A)
0.1
1.0
10
100
0.1
PUL SE WIDTH 300us
2% Duty cycle
TJ= 25 C
CASE TEMPERATURE , C
0
www.mccsemi .com
MCC
FIG.5 - TYPICAL JUNCTIO N CAPACITANCE
CAPACITANCE , (pF)
RE VE RS E VOLT A G E , VO LTS
10
1100
1000
100
10 0.1 4
TJ= 25 C, f= 1MHz