3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR(R) Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES * Junction passivation optimized design passivated anisotropic rectifier technology * TJ = 185 C capability suitable for high reliability and automotive requirement * Available in uni-directional polarity only * 3000 W peak pulse power capability with a 10/1000 s waveform * Excellent clamping capability * Very fast response time DO-214AB (SMC) * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS VWM 10 V to 43 V VBR 11.1 V to 52.8 V PPPM 3000 W PD 6.0 W IFSM 200 A TJ max. 185 C Polarity Uni-directional Package DO-214AB (SMC) Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("X" denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (1) (fig. 3) Peak power pulse current with a 10/1000 s waveform (1) (fig. 1) Peak forward surge current 8.3 ms single half sine-wave (2) Power dissipation on infinite heatsink, TL = 75 C (fig. 6) SYMBOL VALUE UNIT PPPM 3000 W IPPM See next table A IFSM 200 A PD 6.0 W Maximum instantaneous forward voltage at 100 A (2) VF 3.5 V Operating junction and storage temperature range TJ, TSTG -65 to +185 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 27-Oct-16 Document Number: 88480 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. TEST STAND-OFF CURRENT VOLTAGE IT VWM (mA) (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (A) MAXIMUM REVERSE LEAKAGE AT VWM ID (A) TJ = 150 C MAXIMUM MAXIMUM PEAK PULSE CLAMPING SURGE VOLTAGE AT CURRENT IPPM IPPM (A) (2) VC (V) 3KASMC10A 3AX 11.1 12.3 1.0 10 5.0 50 177 17.0 3KASMC11A 3AZ 12.2 13.5 1.0 11 5.0 50 165 18.2 3KASMC12A 3BE 13.3 14.7 1.0 12 2.0 20 151 19.9 3KASMC13A 3BG 14.4 15.9 1.0 13 2.0 20 140 21.5 3KASMC14A 3BK 15.6 17.2 1.0 14 1.0 10 129 23.2 3KASMC15A 3BM 16.7 18.5 1.0 15 1.0 10 123 24.4 3KASMC16A 3BP 17.8 19.7 1.0 16 1.0 10 115 26.0 3KASMC17A 3BR 18.9 20.9 1.0 17 1.0 10 109 27.6 3KASMC18A 3BT 20.0 22.1 1.0 18 1.0 10 103 29.2 3KASMC20A 3BV 22.2 24.5 1.0 20 1.0 10 92.6 32.4 3KASMC22A 3BX 24.4 26.9 1.0 22 1.0 10 84.5 35.5 3KASMC24A 3BZ 26.7 29.5 1.0 24 1.0 10 77.1 38.9 3KASMC26A 3CE 28.9 31.9 1.0 26 1.0 10 71.3 42.1 3KASMC28A 3CG 31.1 34.4 1.0 28 1.0 10 66.1 45.4 3KASMC30A 3CK 33.3 36.8 1.0 30 1.0 15 62.0 48.4 3KASMC33A 3CM 36.7 40.6 1.0 33 1.0 15 56.3 53.3 3KASMC36A 3CP 40.0 44.2 1.0 36 1.0 20 51.6 58.1 3KASMC40A 3CR 44.4 49.1 1.0 40 1.0 20 46.5 64.5 3KASMC43A 3CT 47.8 52.8 1.0 43 1.0 20 43.2 69.4 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient air (1) Typical thermal resistance, junction to leads SYMBOL VALUE RJA 77.5 RJL 18.3 UNIT C/ W Note Mounted on minimum recommended pad layout (1) ORDERING INFORMATION (Example) PREFERRED P/N 3KASMC10AHE3_B/H 3KASMC10AHE3_B/I (1) (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 27-Oct-16 Document Number: 88480 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Power (kW) 100 10 1 1000 Measured at Stand-Off Voltage TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 100 1 10 100 1000 10 10 000 20 30 40 50 td - Pulse Width (s) VWM - Reverse Stand-off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 Peak Forward Surge Current (A) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 Measured at Zero Bias 75 50 25 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 50 0 100 150 1 200 5 10 50 100 TJ - Initial Temperature (C) Number of Cycles at 60 Hz Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current Peak Value IPPM 100 6 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s PD - Power Dissipation (W) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 60 Hz Resistive or Inductive Load 5 4 3 2 1 td 0 0 0 1.0 2.0 3.0 4.0 0 25 50 75 100 125 150 t - Time (ms) TL - Lead Temperature (C) Fig. 3 - Pulse Waveform Fig. 6 - Power Derating Curve 175 200 Revision: 27-Oct-16 Document Number: 88480 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 27-Oct-16 Document Number: 88480 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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