RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
*Power dissipation
Pcm: 0.2 W (Tamb=25OC)
Icm: 0.2 A
V(BR)CBO: 60 V
TJ,Tstg: -55OCto +150OC
*Collector current
*Collector-base voltage
*
MECHANICAL DATA
* Case: Molded plastic
MMST3904
Operationg and storage junction temperature range
SOT-323
0.081(2.05)
0.012(0.30)
0.077(1.95)
0.052(1.33)
0.050(1.27)
0.089(2.25)
0.092(2.35)
REF .040(1.01)
0.051(1.30)
0.047(1.20)
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
625
-
Volts
oC/WThermal Resistance Junction to Ambient (1)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
200
150
-55 to +150
oC
oC
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.006 gram
NOTES : 1.Valid provided that terminals are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS (2)
ON CHARACTERISTICS (2)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 1.0mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCE= 40Vdc,IB=0)
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
Emitter Cutoff Current (VEB= 5Vdc, IC= 0)
Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc
DC Current Gain (IC= 100µAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 1.0mAdc, VCE= 1.0Vdc)
(IC= 10mAdc, VCE= 1.0Vdc)
(IC= 50mAdc, VCE= 1.0Vdc)
(IC= 100mAdc, VCE= 1.0Vdc)
V(BR)CEO 40 - Vdc
V(BR)CBO 60 - Vdc
V(BR)EBO 5.0 - Vdc
ICEO
ICBO
IEBO
IBL
- 0.1
-
-
-
0.1
0.1
50
nAdc
Vdc
µAdc
nAdc
fT250
hFE
70
40
-
-
-
-
-100
60
30
300
VCE(sat)
-0.25
- 0.30
µAdc
Symbol Min Max Unit
(IC= 50mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
Current-Gain-Bandwidth Product (3) (IC= 10mAdc, VCE= 20Vdc, f= 100MHz)
Cibo pF
pF
MHz
td
tr
ts
tf
1.0 40 µs
NF -
-
-
-
-
5.0
ns
dB
ns
hie k
Ω
hre
-
- 4.0
X 10-
4
hfe
-8.0
1.0 10
-
hoe
0.5 8.0
100 400
200
50
35
35
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
Cobo
Output Capacitance (VCE=0.5Vdc, IC= 0, f= 1.0MHz)
Input Impedance (IC= 1.0mAdc, VCE=10Vdc, f=1.0kHz)
Voltage Feedback Ratio (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Small-Signal Current Gain (IC= 1.0mAdc, VCE= 10Vdc, f= 1.0kHz)
Output Admittance (IC= 10mAdc, VCE= 10Vdc, f= 1.0kHz)
Noise Figure (IC= 100µAdc, VCE= 5.0Vdc, RS= 1.0k
Ω
, f= 1.0kHz)
(VCC= 3Vdc, VBE= 0.5Vdc, IC= 10mAdc, IB1= 1mAdc)
(VCC= 3Vdc, IC= 10mAdc, IB1= IB2= 1mAdc)
VdcVBE(sat)
0.65 0.85
-0.95
(IC= 50mAdc, IB= 5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%
- -
