2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
TO-39 CASE
Central
Semiconductor Corp.
TM
R1 (28-April 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 55 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 3.5 V
Collector Current IC0.4 A
Base Current IB2.0 A
Power Dissipation (TC=25°C) PD5.0 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEO VCE=28V 0.02 mA
ICEV VCE=55V, VBE(OFF)=1.5V 0.1 mA
ICEV VCE=30V, VBE(OFF)=1.5V, TC=200°C 5.0 mA
IEBO VEB=3.5V 0.1 mA
BVCER IC=5.0mA, RBE=10Ω55 V
BVCEO IC=5.0mA 30 V
BVEBO IC=100µA 3.5 V
VCE(SAT) IC=100mA, IB=20mA 1.0 V
hFE VCE=5.0V, IC=50mA (2N3866 only) 10 200
hFE VCE=5.0V, IC=50mA (2N3866A only) 25 200
hFE VCE=5.0V, IC=360mA 5.0
fTVCE=15V, IC=50mA, f=200MHz (2N3866 only) 500 MHz
fTVCE=15V, IC=50mA, f=200MHz (2N3866A only) 800 MHz
Cob VCB=28V, IE=0, f=1.0MHz 3.0 pF
GPE VCC=28V, Pout=1.0W, f=400MHz (Figure 1.) 10 dB
ηVCC=28V, Pout=1.0W, f=400MHz (Figure 1.) 45 %
MIN MAX MIN MAX
A (DIA) 0.335 0.370 8.51 9.40
B (DIA) 0.315 0.335 8.00 8.51
C - 0.040 - 1.02
D 0.240 0.260 6.10 6.60
E 0.500 - 12.70 -
F (DIA) 0.016 0.021 0.41 0.53
G (DIA)
H
I 0.028 0.034 0.71 0.86
J 0.029 0.045 0.74 1.14
TO-39 (REV: R1)
0.200
0.100
5.08
2.54
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
R1 (28-April 2005)
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR
MARKING CODE:
FULL PART NUMBER
Figure 1. 400 MHz Test Circuit
