800V 2A
Copyright & Copy;2002 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case : 2S
Unit : mm
D2SB80A
General Purpose Rectifiers SIL Bridges
Absolute Maximum Ratings (If not specified, Tl=25)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40 to 150
Operating Junction Temperature Tj 150
Maximum Reverse Voltage VRM 800 V
Average Rectified Forward Current IO50Hz sine wave, R-load Tl=1152.0 A
50Hz sine wave, R-load Ta=251.5
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 120 A
Current Squared Time I
2
t1mst10ms@Tj=25 per diode 60 A
2
s
Electrical Characteristics (If not specified, Tl=25)
Item Symbol Conditions Ratings Unit
Forward Voltage VFIF=1A, Pulse measurement, Rating of per diode Max.0.95 V
Reverse Current IRVR=800V, Pulse measurement, Rating of per diode Max.10 ÊA
Thermal Resistance Æjl junction to lead Max.10 /W
Æja junction to ambient Max.47
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
50
20
5
0.2
0.5
D2SB80A
Tl = 150°C [ TYP ]
Tl = 25°C [ TYP ]
2
For ward Vol tage
Pulse measur ement per diode
IF [A]
Forward Current
For ward Vol tage VF [V]
0
1
2
3
4
5
00.511.522.5
SIN
D2SB80A
Tj =150°C
sine wave
IO [A]
Average Rectifi ed F or ward Curr ent
PF [W]
Forward Power Dissipation
Forward Power Dissipation
0
50
100
150
200
1 10 100
D2SB80AP eak Surg e Forward Cap ab ility
Number of C ycles [cycle]
Peak Surge F or ward Curr ent IFSM [A]
IFSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj = 125°C before
su rge cu rren t is applied
0 20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
SIN
D2SB80A Derating Curve
IO [A]
Average Rectifi ed F or ward Curr ent
Ta [°C]
Ambi ent Temperatur e
sine wave
R - load
f r ee in air
PCB
G las s - epoxy s ubstrate
Soldering land 5mm phi
0 20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
SIN
D2SB80A Derating Curve
sine wave
R - load
f r ee in air
G las s - epoxy s ubstrate
Soldering land 5mm phi
PCB
IO [A]
Tl [°C]
Lead Temper ature
Average Rectifi ed F or ward Curr ent
