© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 2 1Publication Order Number:
2N5401/D
2N5401
Preferred Device
Amplifier Transistors
PNP Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter V oltage VCEO 150 Vdc
Collector − Base Voltage VCBO 160 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D. Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
12312
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
2N
5401
AYWW G
G
A = Assembly Location
Y = Year
WW = W ork Week
G= Pb−Free Package
(Note: Microdot may be in either location)
2N5401
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 150 Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 160 Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
50
50
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE 50
60
50
240
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
1.0
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 300 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 6.0 pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 200
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF 8.0 dB
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
2N5401G TO−92
(Pb−Free) 5000 Unit / Bulk
2N5401RLRAG TO−92
(Pb−Free) 2000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N5401
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
30
100
150
200
0.1
h , CURRENT GAIN
0.5 2.0 3.0 100.2 0.3
20
1.0 5.0
FE
TJ = 125°C
25°C
−55°C
70
50
20 30 50 100
VCE = − 1.0 V
VCE = − 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
VBE, BASE−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)μIC
103
0.10.3 0.2
102
101
100
10−1
10−2
10−3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125°C
75°C
25°C
REVERSE FORWARD
2N5401
http://onsemi.com
4
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.7
1.0
0.2
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VCE(sat) @ IC/IB = 10
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
C, CAPACITANCE (pF)
100
TJ = 25°C
Cibo
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
0.3 3.0 30
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
Figure 7. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
−30 V
3.0 k
tr, tf 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
TJ = −55°C to 135°C
qVC for VCE(sat)
qVB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. Turn−Off Time
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25°C
2N5401
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 −−−
N2.04 2.66
P1.50 4.00
R2.93 −−−
V3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
2N5401/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative