MJ15002 - ON Semiconductor - Datasheet.Company

September, 2013 − Rev. 6

1Publication Order Number:

MJ15001/D

MJ15001 (NPN),

MJ15002 (PNP)

Complementary Silicon

Power Transistors

The MJ15001 and MJ15002 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

•High Safe Operating Area

•For Low Distortion Complementary Designs

•High DC Current Gain

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 140 Vdc

Collector−Base Voltage VCBO 140 Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector Current − Continuous IC15 Adc

Base Current − Continuous IB5 Adc

Emitter Current − Continuous IE20 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD200

1.14

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +200 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.875 °C/W

Maximum Lead Temperature for Soldering

Purposes 1/16″ from Case for v 10 secs

TL265 °C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

ORDERING INFORMATION

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 250 WATTS

TO−204AA

(Pb−Free)

MJ15002G

MJ15001G TO−204AA

(Pb−Free)

100 Units/Tray

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

MJ1500x = Device Code

x = 1 or 2

G= Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

MJ1500xG

AYYWW

MEX

SCHEMATIC

BASE

EMITTER 2

CASE 3

BASE

EMITTER 2

CASE 3

PNP NPN

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC, = 200 mAdc, IB = 0)

VCEO(sus) 140 −Vdc

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ICEX

−

100

2.0

mAdc

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ICEO −250 mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO −100 mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1 s (non−repetitive))

(VCE = 100 Vdc, t = 1 s (non−repetitive))

IS/b 5.0

0.5

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 2 Vdc)

hFE 25 150 −

Collector−Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)

VCE(sat) −1.0 Vdc

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 2 Vdc)

VBE(on) −2.0 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

fT2.0 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob −1000 pF

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

IC, COLLECTOR CURRENT (AMP)

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5 7 10 200

2 3 50 70 10020 30

200

0.5

0.2

0.7

0.3

TC = 25°C

TJ = 200°C

BONDING WIRE LIMITED

THERMAL LIMITATION (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ (pk) = 200°C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

IC, COLLECTOR CURRENT (AMP)

0.7 1 2 3 5 107200.2 0.3 0.5 20.7 1 2 3 5 107200.2 0.3 0.5

Figure 2. Capacitances

IC, COLLECTOR CURRENT (AMP)

2.0

1.6

1.2

0.4

0.8

0.7 1 2 3 5 10720

IC, COLLECTOR CURRENT (AMP)VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Current−Gain — Bandwidth Product

Figure 4. DC Current Gain

700

500

1000

3 5 10 1502

300

200

100

IC, COLLECTOR CURRENT (AMP)

Figure 5. “On” Voltages

10 20 30 7050 1001.5

0.3 0.5 10.2

0.7

MJ15002 (PNP)

035 1070.1 2

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5

TJ = 25°C

VBE @ VCE = 2 Vdc

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

TJ = 100°C

25°C

100°C

2.0

1.6

1.2

0.4

0.8

00.7 1 2 3 5 107200.2 0.3 0.5

TJ = 100°C

25°C

hFE, DC CURRENT GAIN

VCE = 2 Vdc

TJ = 25°C

VCE = 10 V

ftest = 0.5 MHz

Cib

MJ15001

(NPN)

TJ = 25°C

MJ15001 (NPN)

MJ15002 (PNP)

hFE, DC CURRENT GAINV, VOLTAGE (VOLTS)

100

200

100

200

C, CAPACITANCE (pF)

Cib

Cob

MJ15001 MJ15002

VCE = 2 Vdc

TJ = 100°C

25°C

VBE @ VCE = 2 Vdc

TJ = 25°C

100°C

VCE(sat) @ IC/IB = 10

TJ = 100°C

25°C

TYPICAL CHARACTERISTICS

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T−SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJ15001/D

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