Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A, 80 V 100 V fps(on): 0.10 Features: SOA is power-dissipation limited uw Nanosecond switching speeds w Linear transter characteristics a High input impedance Majority carrier device RFM18N08 RFM18N10 The RFM18N08 and RFM18N10 and the RFP18N08 and RFP18N10* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and tow gate- RFP18NO08 drive power. These types can be operated directly from RFP18N10 integrated circuits. Ri The RFM-series types are supplied in the JEDEC TO- (FLANGE) 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. *The RFM and RFP series were formerly RCA developmental numbers TA9286 and TA9287, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (T,=25C): RFM18NO08 RFM18N10 File Number 1446 4 9209-33701 N-Channel Enhancement Mode TERMINAL DESIGNATIONS DRAIN SOURCE {FLANGE ) @ GATE 92CS-37801 JEDEC TO-204AA 92Cs-39528 JEDEC TO-220AB RFPI8NO8 RFP18N10 DRAIN-SOURCE VOLTAGE Voss 80 100 80 100 DRAIN-GATE VOLTAGE (Res=1 MQ) = Voer 80 100 80 100 GATE-SOURCE VOLTAGE Ves +20 DRAIN CURRENT RMS Continuous 'b 18 Pulsed lom 45 POWER DISSIPATION @ Te=25C Pr 100 100 75 75 Derate above T;=25C 0.8 0.8 0.6 0.6 OPERATING AND STORAGE TEMPERATURE Ti, Tsto -55 to +150 3-432 SOURCE Ce) O = ray ORAIN } 7 > TOP VIEW GATE v vStandard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 ELECTRICAL CHARACTERISTICS At Case Temperature (T-;) = 25C unless otherwise specified LIMITS RFM18N08 RFM18N10 TEST RFP18N08 FIFP18N10 CHARACTERISTICS SYMBOL CONDITIONS MIN. |MAX.| MIN. | MAX. | UNITS =1mA Drain-Source Breakdown Voltage BVpss " 80 _ 100 _ v 6s . Ves = Vos . Gate Threshold Voltage Vesan 2 4 2 4 Vv lb =1 mA Vos = 65 V _ 1 . Vos = 80V _ _ _ 1 Vv Zero Gate Voltage Drain Current loss To = 125C uA Vos = 65 V _ 50 _ Vos = 80 V _ _ - 50 Gate-Source Leakage Current lass Ves = + 20V _ 100 _ 100 nA Vos =0 ve ov |1.08| - | 1.08 Drain-Source On Voltage Vos(on)* ss V lp = 18 A _ 3.0 _ 3.0 Ves = 10 V , : Static Drain-Source On Resistance ros(on)* ID=9A _ 0.10 _ 0.10 a Ves =10V Vos = 10 V Forward Transconductance Qts" Ps 5 _ 5 _ mho lb =9A Input Capacitance Ciss Vos = 25 V _ 1700 -- 1700 Output Capacitance Coss Ves =O0V = 750 750 pF Reverse Transfer Capacitance Cras f= 1MHz _ 300 - 300 Turn-On Delay Time ta(on) Voo0=50 V 60(typ.) | 90 | 6O(typ.) | 90 Rise Time t, lb =9A 300(typ.) | 450 | 300(typ.) | 450 ns Turn-Off Delay Time ta(off) Rogen = Rgs = 50 2) 150(typ.) | 225 | 150(typ.) | 225 Fall Time tr Ves = 10 V 150(typ.) | 225 | 150(typ.) | 225 RFM18NO08, _ 1.25 _ 1.25 Thermal Resistance ROJC REM18N10 oC/W Junction-to-Case RFP18N08, _ 1.67 _ 1.67 RFP18N10 , : *Pulsed: Pulse duration = 300 us max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS \ TEST RFEM18N08 RFP18N08 CHARACTERISTIC SYMBOL | CONDITIONS RFM18N10 RFPisnio. | UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vso Isp=9 A = 1.4 = 1.4 Vv Reverse Recovery Time tr die 1de100. Alus 150(typ) 150(typ) ns Pulse Test: Width < 300 ys, duty cycle < 2%. 3-433Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 e c) = 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) a & AREA IS w LIMITED BY b z uh a Se oO z ft eo a a 6 (MAX) = 80 V (MAX) = 100 V RFMISNIO 0.1 2 4 6 6 2 4 6 6 2 4 6 a 4 10 loo 1000 DRAIN~TO-SOURCE VOLTAGE Vos) -V 92CM- 36150R1 Fig. 1 Maximum operating areas for all types. = ps =1 mA RFMIBNO8 2 RFMIGNIO = | = 2 Zz 2 a a a g 6 & Py = o 2 100 150 CASE TEMPERATURE (Tci C JUNCTION TEMPERATURE (T) C 92cs- 34816 92CS- 34818 Fig. 2 Power dissipation vs. case temperature derating curve for all types. Fig. 3 Typical normalized gate threshold voitage as a function of junction temperature for all types. Yos* lov CASE TEMPERATURE Ip=4a Gg* tov PULSE TEST: PULSE DURATION =80 BS DUTY CYCLE < 2% 25C I al as e es a pe 3 ao z Sa a an oa Wo a Nw a a5 4 & a 2 z FS -40 JUNCTION TEMPERATURE mee GATE-TO- SOURCE VOLTAGE (Ves) -Vv 92CS- 36180 92C$~36149 Fig. 4 - Normalized drain-to-source on resistance to junction tem- Fig. 5 Typical transfer characteristics for all types. perature for all types. 3-434Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 T T T T Voss GATE i" SOURCE - VOLTAGE Yoo = Yoss Yoo = Voss 2 t ig (RE 2 3 emer 3 $ $ | 50 | & 0.75 Voss, o 2 oL 0.50 Vogs 0.25 Voss 25. DAAIN SOURCE VOLTAGE Ig (REF) Ig (REF) 20 Bach 20 tach TIME Microseconds 4208-37645 Fig. 6 - Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 ard AN-7260. 2 o TO-SOURCE ON RESISTANCE [1 pg (ont Vog= 10 V PULSE TEST PULSE DURATION = 895 DUTY CYCLE < 2% DRAIN CURRENT (Ip) A 92CS-36144 Fig. 8 - Typical drain-to-source on resistance as a function of drain current for all types. o z & 1 ey a uy go 2 a i So 2 a 2 So Ga a z < a KE a ia a = & 2 i 4 6 a DRAIN CURRENT (Ip}-A 10 12 ry 92CS - 36145 Fig. 10 Typical forward transconductance as a function of drain current for all types. DRAIN CURRENT (Tp)-A PULSE TEST PULSE QURATION =80yuS DUTY CYCLE < 2% CASE TEMPERATURE )325% DRAIN -TO-SOURCE VOLTAGE (Vpg)V S2CS- 36146 Fig. 7 Typical saturation characteristics for all types. FREQUENCY (1) = 1 MHz 2400 vp Q 2 5 3 oo Cisn CAPACITANCE (C) pF x 4 a @ 2 5 QO 10 20 30 40 50 ORAIN~TO-SOURCE VOLTAGE (Vpg) ~V 92CS-36143A1 Fig. 9 Capacitance as a function of drain-to-source voltage for all types. .52 KELVIN CONTACT = 9208-37362 Fig. 11 Switching Time Test Circuit 3-435