2N6200 E NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N6200 is Designed for wideband large-signal amplifier stages in the 125 - 175 MHz range. .112x45 A C B E E FEATURES: OC * Minimum Gain = 7.6 dB * Output Power = 40 W * OmnigoldTM Metalization System B D H I J G #8-32 UNC-2A MAXIMUM RATINGS F E IC 5.0 A VCBO 65 V VCEO 35 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 60 W @ TC = 25 C G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 TJ -65 C to +200 C I .155 / 3.94 .175 / 4.45 TSTG -65 C to +200 C JC 2.9 C/W VEBO PDISS 4.0 V CHARACTERISTICS SYMBOL MAXIMUM .750 / 19.05 J TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA ICES VCE = 30 V 10 mA hFE VCE = 5.0 V 200 --- COB VCB = 30 V 65 pF GP C VCE = 28 V IC = 500 mA 5.0 f = 1.0 MHz POUT = 40 W f = 175 MHz 7.6 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. --- dB % REV. A 1/1